Research paperExperimental CharacterizationExtended Quantum Anomalous Hall States in Graphene/hBN Moiré SuperlatticesZhengguang Lu, Tonghang Han, Yuxuan Yao, Jixiang Yang et al.2024·10.1038/s41586-024-08470-1·arXiv:2408.10203AbstractWe report DC electrical transport measurements in rhombohedral penta- and tetra-layer graphene/hBN moiré superlattices at electronic temperatures down to ~40 mK. We observed additional fractional quantum anomalous Hall states in penta-layer devices, fractional quantum anomalous Hall states in a tetra-layer device, and a new extended quantum anomalous Hall state with quantized Hall resistance and vanishing longitudinal resistance over a wide range of moiré filling factors.Read more
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 1) used for transport measurements and phase-diagram mapping.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNStudied MaterialExpand
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 2) used in extended data for additional transport characterization.No measurements recordedExperimentalCStudied MaterialBNStudied MaterialExpand
Tetra-layer rhombohedral graphene/hBN moiré superlattice device (Device 3) used for transport measurements showing fractional and extended QAH states.1 characterization3 properties1 figureExperimentalCStudied MaterialBNStudied MaterialExpand
Research paperExperimental CharacterizationExtended Quantum Anomalous Hall States in Graphene/hBN Moiré SuperlatticesZhengguang Lu, Tonghang Han, Yuxuan Yao, Jixiang Yang et al.2024·10.1038/s41586-024-08470-1·arXiv:2408.10203AbstractWe report DC electrical transport measurements in rhombohedral penta- and tetra-layer graphene/hBN moiré superlattices at electronic temperatures down to ~40 mK. We observed additional fractional quantum anomalous Hall states in penta-layer devices, fractional quantum anomalous Hall states in a tetra-layer device, and a new extended quantum anomalous Hall state with quantized Hall resistance and vanishing longitudinal resistance over a wide range of moiré filling factors.Read more
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 1) used for transport measurements and phase-diagram mapping.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNStudied MaterialExpand
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 2) used in extended data for additional transport characterization.No measurements recordedExperimentalCStudied MaterialBNStudied MaterialExpand
Tetra-layer rhombohedral graphene/hBN moiré superlattice device (Device 3) used for transport measurements showing fractional and extended QAH states.1 characterization3 properties1 figureExperimentalCStudied MaterialBNStudied MaterialExpand
Research paperExperimental CharacterizationExtended Quantum Anomalous Hall States in Graphene/hBN Moiré SuperlatticesZhengguang Lu, Tonghang Han, Yuxuan Yao, Jixiang Yang et al.2024·10.1038/s41586-024-08470-1·arXiv:2408.10203AbstractWe report DC electrical transport measurements in rhombohedral penta- and tetra-layer graphene/hBN moiré superlattices at electronic temperatures down to ~40 mK. We observed additional fractional quantum anomalous Hall states in penta-layer devices, fractional quantum anomalous Hall states in a tetra-layer device, and a new extended quantum anomalous Hall state with quantized Hall resistance and vanishing longitudinal resistance over a wide range of moiré filling factors.Read more
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 1) used for transport measurements and phase-diagram mapping.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNStudied MaterialExpand
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 2) used in extended data for additional transport characterization.No measurements recordedExperimentalCStudied MaterialBNStudied MaterialExpand
Tetra-layer rhombohedral graphene/hBN moiré superlattice device (Device 3) used for transport measurements showing fractional and extended QAH states.1 characterization3 properties1 figureExperimentalCStudied MaterialBNStudied MaterialExpand
Research paperExperimental CharacterizationExtended Quantum Anomalous Hall States in Graphene/hBN Moiré SuperlatticesZhengguang Lu, Tonghang Han, Yuxuan Yao, Jixiang Yang et al.2024·10.1038/s41586-024-08470-1·arXiv:2408.10203AbstractWe report DC electrical transport measurements in rhombohedral penta- and tetra-layer graphene/hBN moiré superlattices at electronic temperatures down to ~40 mK. We observed additional fractional quantum anomalous Hall states in penta-layer devices, fractional quantum anomalous Hall states in a tetra-layer device, and a new extended quantum anomalous Hall state with quantized Hall resistance and vanishing longitudinal resistance over a wide range of moiré filling factors.Read more
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 1) used for transport measurements and phase-diagram mapping.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNStudied MaterialExpand
Penta-layer rhombohedral graphene/hBN moiré superlattice device (Device 2) used in extended data for additional transport characterization.No measurements recordedExperimentalCStudied MaterialBNStudied MaterialExpand
Tetra-layer rhombohedral graphene/hBN moiré superlattice device (Device 3) used for transport measurements showing fractional and extended QAH states.1 characterization3 properties1 figureExperimentalCStudied MaterialBNStudied MaterialExpand
