Research paperComputational DFTExperimental CharacterizationA planar defect spin sensor in a two-dimensional material susceptible to strain and electric fieldsP. Udvarhelyi, T. Clua-Provost, A. Durand, J. Li et al.2023·arXiv:2304.00492AbstractFirst-principles calculations are used to determine the coupling of the boron-vacancy spin defect (V−B) in hexagonal boron nitride to strain and electric fields. The theoretical predictions are then compared with optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of V−B centres, revealing that the orthorhombic zero-field splitting arises from local electric fields produced by surrounding charge defects.Read more
Neutron-irradiated hBN crystals containing different densities of negatively charged boron-vacancy (V−B) centers used for ODMR analysis.1 characterization2 propertiesExperimentalhBNStudied MaterialExpand
Research paperComputational DFTExperimental CharacterizationA planar defect spin sensor in a two-dimensional material susceptible to strain and electric fieldsP. Udvarhelyi, T. Clua-Provost, A. Durand, J. Li et al.2023·arXiv:2304.00492AbstractFirst-principles calculations are used to determine the coupling of the boron-vacancy spin defect (V−B) in hexagonal boron nitride to strain and electric fields. The theoretical predictions are then compared with optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of V−B centres, revealing that the orthorhombic zero-field splitting arises from local electric fields produced by surrounding charge defects.Read more
Neutron-irradiated hBN crystals containing different densities of negatively charged boron-vacancy (V−B) centers used for ODMR analysis.1 characterization2 propertiesExperimentalhBNStudied MaterialExpand
Research paperComputational DFTExperimental CharacterizationA planar defect spin sensor in a two-dimensional material susceptible to strain and electric fieldsP. Udvarhelyi, T. Clua-Provost, A. Durand, J. Li et al.2023·arXiv:2304.00492AbstractFirst-principles calculations are used to determine the coupling of the boron-vacancy spin defect (V−B) in hexagonal boron nitride to strain and electric fields. The theoretical predictions are then compared with optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of V−B centres, revealing that the orthorhombic zero-field splitting arises from local electric fields produced by surrounding charge defects.Read more
Neutron-irradiated hBN crystals containing different densities of negatively charged boron-vacancy (V−B) centers used for ODMR analysis.1 characterization2 propertiesExperimentalhBNStudied MaterialExpand
Research paperComputational DFTExperimental CharacterizationA planar defect spin sensor in a two-dimensional material susceptible to strain and electric fieldsP. Udvarhelyi, T. Clua-Provost, A. Durand, J. Li et al.2023·arXiv:2304.00492AbstractFirst-principles calculations are used to determine the coupling of the boron-vacancy spin defect (V−B) in hexagonal boron nitride to strain and electric fields. The theoretical predictions are then compared with optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of V−B centres, revealing that the orthorhombic zero-field splitting arises from local electric fields produced by surrounding charge defects.Read more
Neutron-irradiated hBN crystals containing different densities of negatively charged boron-vacancy (V−B) centers used for ODMR analysis.1 characterization2 propertiesExperimentalhBNStudied MaterialExpand