Patent
US 11,681,060 B2RUGGED HEXAGONAL BORON NITRIDE SOLID STATE DETECTOR
Olivier Philip, Irina Shestakova
SCHLUMBERGER TECHNOLOGY CORPORATION, Sugar Land, TX (US)·Jun. 20, 2023·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,681,060 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a rugged hexagonal boron nitride solid state detector.
FIG. 2 is a side perspective view of the rugged hexagonal boron nitride solid state detector of
FIG. 3 is a side perspective view of a readout chip with solder bumps to connect to a pixelated electrode.
FIG. 4 is a method of producing a H-BN film based apparatus used to detect activity within a nuclear environ- ment.
FIG. 5 is a method of performing a count of nuclear reactions using a solid state detector that uses hexagonal boron nitride. To facilitate understanding, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a H-BN film having a top surface and a bottom surface; 50 a first metalized plate connected to the top surface of the H-BN film; a second metalized plate connected to the bottom surface of the H-BN film; a first electrical connection connected to the first metal-ized plate; and a second electrical connection connected to the second metalized plate; wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus.
The apparatus according to claim 1, further comprising: an amplifier connected to at least one of the first electrical connection and the second electrical connection.
The apparatus according to claim 1, wherein the H-BN film has a second indentation and the second metalized plate is placed with the second indentation to provide a smooth bottom surface of the apparatus.
The apparatus according to claim 1, further comprising: at least one housing configured to house the film and at least a portion of the first electrical connection and the second electrical connection.
A method of manufacturing a sensor, comprising: obtaining at least one H-BN film; one of cutting and shaping the film to a predetermined size; metallizing a portion of both a top and a bottom face of the film, wherein metallizing the portion of both the top and the bottom face of the film comprises: placing a first metalized plate within a first indentation of the film to produce a smooth top surface of the apparatus; establishing at least one electrical connection to the top and bottom metallized portions; and enclosing the H-BN film with the metallized portions of the top and the bottom face of the film and a portion of the at least one electrical connection to the top and bottom metallized portions within a housing.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through an arc spray process.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through a flame spray process.
A method of operating a sensor, comprising: obtaining at least one H-BN film, wherein the film has a first metalized plate connected to a top surface of the H-BN film, a second metalized plate connected to a bottom surface of the H-BN film, a first electrical connection connected to the first metalized plate, and a second electrical connection connected to the second metalized plate, wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus; applying a voltage difference between the top face and the bottom face; collecting a charge at the H-BN film; and producing a signal from the H-BN film when the charge is collected.
The method according to claim 12, wherein the charge is carried by an electron.
The method according to claim 12, further compris-ing: amplifying the signal produced by the H-BN film.
The method according to claim 12, further compris-ing: counting each signal produced by the H-BN film. 11 12
Layer stacks claimed or described, ordered top of device to substrate.
hexagonal boron nitride solid-state neutron detector
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
10B-enriched hexagonal boron nitride
H-10BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
durability and electrical conductivity. Metallizing also aids in reducing maintenance costs, wherein a robust connection may be established to the film. The metallizing process also allows for the connection to be established with no surface distor-tion as very
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 6.5 eV | h-BN |
Detection Efficiency |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
Patent
Atlas literature
Patent
US 11,681,060 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a rugged hexagonal boron nitride solid state detector.
FIG. 2 is a side perspective view of the rugged hexagonal boron nitride solid state detector of
FIG. 3 is a side perspective view of a readout chip with solder bumps to connect to a pixelated electrode.
FIG. 4 is a method of producing a H-BN film based apparatus used to detect activity within a nuclear environ- ment.
FIG. 5 is a method of performing a count of nuclear reactions using a solid state detector that uses hexagonal boron nitride. To facilitate understanding, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a H-BN film having a top surface and a bottom surface; 50 a first metalized plate connected to the top surface of the H-BN film; a second metalized plate connected to the bottom surface of the H-BN film; a first electrical connection connected to the first metal-ized plate; and a second electrical connection connected to the second metalized plate; wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus.
The apparatus according to claim 1, further comprising: an amplifier connected to at least one of the first electrical connection and the second electrical connection.
The apparatus according to claim 1, wherein the H-BN film has a second indentation and the second metalized plate is placed with the second indentation to provide a smooth bottom surface of the apparatus.
The apparatus according to claim 1, further comprising: at least one housing configured to house the film and at least a portion of the first electrical connection and the second electrical connection.
A method of manufacturing a sensor, comprising: obtaining at least one H-BN film; one of cutting and shaping the film to a predetermined size; metallizing a portion of both a top and a bottom face of the film, wherein metallizing the portion of both the top and the bottom face of the film comprises: placing a first metalized plate within a first indentation of the film to produce a smooth top surface of the apparatus; establishing at least one electrical connection to the top and bottom metallized portions; and enclosing the H-BN film with the metallized portions of the top and the bottom face of the film and a portion of the at least one electrical connection to the top and bottom metallized portions within a housing.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through an arc spray process.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through a flame spray process.
A method of operating a sensor, comprising: obtaining at least one H-BN film, wherein the film has a first metalized plate connected to a top surface of the H-BN film, a second metalized plate connected to a bottom surface of the H-BN film, a first electrical connection connected to the first metalized plate, and a second electrical connection connected to the second metalized plate, wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus; applying a voltage difference between the top face and the bottom face; collecting a charge at the H-BN film; and producing a signal from the H-BN film when the charge is collected.
The method according to claim 12, wherein the charge is carried by an electron.
The method according to claim 12, further compris-ing: amplifying the signal produced by the H-BN film.
The method according to claim 12, further compris-ing: counting each signal produced by the H-BN film. 11 12
Layer stacks claimed or described, ordered top of device to substrate.
hexagonal boron nitride solid-state neutron detector
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
10B-enriched hexagonal boron nitride
H-10BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
durability and electrical conductivity. Metallizing also aids in reducing maintenance costs, wherein a robust connection may be established to the film. The metallizing process also allows for the connection to be established with no surface distor-tion as very
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 6.5 eV | h-BN |
Detection Efficiency |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
Patent
Atlas literature
Patent
US 11,681,060 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a rugged hexagonal boron nitride solid state detector.
FIG. 2 is a side perspective view of the rugged hexagonal boron nitride solid state detector of
FIG. 3 is a side perspective view of a readout chip with solder bumps to connect to a pixelated electrode.
FIG. 4 is a method of producing a H-BN film based apparatus used to detect activity within a nuclear environ- ment.
FIG. 5 is a method of performing a count of nuclear reactions using a solid state detector that uses hexagonal boron nitride. To facilitate understanding, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a H-BN film having a top surface and a bottom surface; 50 a first metalized plate connected to the top surface of the H-BN film; a second metalized plate connected to the bottom surface of the H-BN film; a first electrical connection connected to the first metal-ized plate; and a second electrical connection connected to the second metalized plate; wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus.
The apparatus according to claim 1, further comprising: an amplifier connected to at least one of the first electrical connection and the second electrical connection.
The apparatus according to claim 1, wherein the H-BN film has a second indentation and the second metalized plate is placed with the second indentation to provide a smooth bottom surface of the apparatus.
The apparatus according to claim 1, further comprising: at least one housing configured to house the film and at least a portion of the first electrical connection and the second electrical connection.
A method of manufacturing a sensor, comprising: obtaining at least one H-BN film; one of cutting and shaping the film to a predetermined size; metallizing a portion of both a top and a bottom face of the film, wherein metallizing the portion of both the top and the bottom face of the film comprises: placing a first metalized plate within a first indentation of the film to produce a smooth top surface of the apparatus; establishing at least one electrical connection to the top and bottom metallized portions; and enclosing the H-BN film with the metallized portions of the top and the bottom face of the film and a portion of the at least one electrical connection to the top and bottom metallized portions within a housing.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through an arc spray process.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through a flame spray process.
A method of operating a sensor, comprising: obtaining at least one H-BN film, wherein the film has a first metalized plate connected to a top surface of the H-BN film, a second metalized plate connected to a bottom surface of the H-BN film, a first electrical connection connected to the first metalized plate, and a second electrical connection connected to the second metalized plate, wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus; applying a voltage difference between the top face and the bottom face; collecting a charge at the H-BN film; and producing a signal from the H-BN film when the charge is collected.
The method according to claim 12, wherein the charge is carried by an electron.
The method according to claim 12, further compris-ing: amplifying the signal produced by the H-BN film.
The method according to claim 12, further compris-ing: counting each signal produced by the H-BN film. 11 12
Layer stacks claimed or described, ordered top of device to substrate.
hexagonal boron nitride solid-state neutron detector
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
10B-enriched hexagonal boron nitride
H-10BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
durability and electrical conductivity. Metallizing also aids in reducing maintenance costs, wherein a robust connection may be established to the film. The metallizing process also allows for the connection to be established with no surface distor-tion as very
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 6.5 eV | h-BN |
Detection Efficiency |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
Patent
Atlas literature
Patent
US 11,681,060 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a side view of a rugged hexagonal boron nitride solid state detector.
FIG. 2 is a side perspective view of the rugged hexagonal boron nitride solid state detector of
FIG. 3 is a side perspective view of a readout chip with solder bumps to connect to a pixelated electrode.
FIG. 4 is a method of producing a H-BN film based apparatus used to detect activity within a nuclear environ- ment.
FIG. 5 is a method of performing a count of nuclear reactions using a solid state detector that uses hexagonal boron nitride. To facilitate understanding, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a H-BN film having a top surface and a bottom surface; 50 a first metalized plate connected to the top surface of the H-BN film; a second metalized plate connected to the bottom surface of the H-BN film; a first electrical connection connected to the first metal-ized plate; and a second electrical connection connected to the second metalized plate; wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus.
The apparatus according to claim 1, further comprising: an amplifier connected to at least one of the first electrical connection and the second electrical connection.
The apparatus according to claim 1, wherein the H-BN film has a second indentation and the second metalized plate is placed with the second indentation to provide a smooth bottom surface of the apparatus.
The apparatus according to claim 1, further comprising: at least one housing configured to house the film and at least a portion of the first electrical connection and the second electrical connection.
A method of manufacturing a sensor, comprising: obtaining at least one H-BN film; one of cutting and shaping the film to a predetermined size; metallizing a portion of both a top and a bottom face of the film, wherein metallizing the portion of both the top and the bottom face of the film comprises: placing a first metalized plate within a first indentation of the film to produce a smooth top surface of the apparatus; establishing at least one electrical connection to the top and bottom metallized portions; and enclosing the H-BN film with the metallized portions of the top and the bottom face of the film and a portion of the at least one electrical connection to the top and bottom metallized portions within a housing.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through an arc spray process.
The method of manufacturing the sensor according to claim 9, wherein the metallizing the portion of the top and bottom face of the film is performed through a flame spray process.
A method of operating a sensor, comprising: obtaining at least one H-BN film, wherein the film has a first metalized plate connected to a top surface of the H-BN film, a second metalized plate connected to a bottom surface of the H-BN film, a first electrical connection connected to the first metalized plate, and a second electrical connection connected to the second metalized plate, wherein the H-BN film has a first indentation and the first metalized plate is placed within the first indentation to produce a smooth top surface of the apparatus; applying a voltage difference between the top face and the bottom face; collecting a charge at the H-BN film; and producing a signal from the H-BN film when the charge is collected.
The method according to claim 12, wherein the charge is carried by an electron.
The method according to claim 12, further compris-ing: amplifying the signal produced by the H-BN film.
The method according to claim 12, further compris-ing: counting each signal produced by the H-BN film. 11 12
Layer stacks claimed or described, ordered top of device to substrate.
hexagonal boron nitride solid-state neutron detector
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
10B-enriched hexagonal boron nitride
H-10BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
durability and electrical conductivity. Metallizing also aids in reducing maintenance costs, wherein a robust connection may be established to the film. The metallizing process also allows for the connection to be established with no surface distor-tion as very
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 6.5 eV | h-BN |
Detection Efficiency |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
HEXAGONAL BORON NITRIDE POWDER AND METHOD FOR PRODUCING THE SAME, AND COMPOSITION AND HEAT DISSIPATION MATERIAL USING THE SAME
h-BN |
Cited non-patent literature · 2
h-BN |
Cited non-patent literature · 2
h-BN |
Cited non-patent literature · 2
h-BN |
Cited non-patent literature · 2