Patent
US 8,529,696of the invention
Kenji WATANABE
US
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Patent
Atlas literature
Patent
US 8,529,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing hexagonal boron nitride single crystals, comprising: mixing boron nitride crystals with a solvent thereby obtaining a mixture; heating and melting the mixture under hig h- temperature at least 1,500 * C and high- pressure 20, 000-60,000 atmospheric pressure thereby obtaining a melted mixture; and [[rectystallizing]] recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boa i m barium boronitride, or boronitride of alkali metal and the beronitridc of alkali earh metal barium boronitride.
The method according to claim 1, wherein the boronitride of alkali metal is lithium boronitride.
The method according to claim 1, wherein the solvent is substantially free from impurities containing oxygen.
The method according to claim 1, wherein the hexagonal boron nitride single crystals have a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
2-3. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride single crystal
hBN
boron nitride crystals
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum light emission peak (cathodoluminescence, room temperature) | 215 nm | hBN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,529,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing hexagonal boron nitride single crystals, comprising: mixing boron nitride crystals with a solvent thereby obtaining a mixture; heating and melting the mixture under hig h- temperature at least 1,500 * C and high- pressure 20, 000-60,000 atmospheric pressure thereby obtaining a melted mixture; and [[rectystallizing]] recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boa i m barium boronitride, or boronitride of alkali metal and the beronitridc of alkali earh metal barium boronitride.
The method according to claim 1, wherein the boronitride of alkali metal is lithium boronitride.
The method according to claim 1, wherein the solvent is substantially free from impurities containing oxygen.
The method according to claim 1, wherein the hexagonal boron nitride single crystals have a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
2-3. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride single crystal
hBN
boron nitride crystals
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum light emission peak (cathodoluminescence, room temperature) | 215 nm | hBN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,529,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing hexagonal boron nitride single crystals, comprising: mixing boron nitride crystals with a solvent thereby obtaining a mixture; heating and melting the mixture under hig h- temperature at least 1,500 * C and high- pressure 20, 000-60,000 atmospheric pressure thereby obtaining a melted mixture; and [[rectystallizing]] recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boa i m barium boronitride, or boronitride of alkali metal and the beronitridc of alkali earh metal barium boronitride.
The method according to claim 1, wherein the boronitride of alkali metal is lithium boronitride.
The method according to claim 1, wherein the solvent is substantially free from impurities containing oxygen.
The method according to claim 1, wherein the hexagonal boron nitride single crystals have a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
2-3. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride single crystal
hBN
boron nitride crystals
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum light emission peak (cathodoluminescence, room temperature) | 215 nm | hBN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,529,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing hexagonal boron nitride single crystals, comprising: mixing boron nitride crystals with a solvent thereby obtaining a mixture; heating and melting the mixture under hig h- temperature at least 1,500 * C and high- pressure 20, 000-60,000 atmospheric pressure thereby obtaining a melted mixture; and [[rectystallizing]] recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boa i m barium boronitride, or boronitride of alkali metal and the beronitridc of alkali earh metal barium boronitride.
The method according to claim 1, wherein the boronitride of alkali metal is lithium boronitride.
The method according to claim 1, wherein the solvent is substantially free from impurities containing oxygen.
The method according to claim 1, wherein the hexagonal boron nitride single crystals have a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
2-3. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride single crystal
hBN
boron nitride crystals
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum light emission peak (cathodoluminescence, room temperature) | 215 nm | hBN |
Related documents with shared materials, methods, properties, or citations.
barium boronitride
boronitride of alkali metal
lithium boronitride
cubic boron nitride single crystal
cBN
light emission wavelength range at 83 K |
| 210–235 nm |
hBN |
absorption peak 1 | 208 nm | hBN |
absorption peak 2 | 213 nm | hBN |
claimed maximum light emission peak (claim range: ≤235 nm) | 215 nm | hBN |
band gap of hBN (direct transition type semiconductor) | 5.8 eV | hBN |
Thickness | 210–235 nm | — |
Thickness | 210–220 nm | — |
Thickness | 200–2500 nm | — |
Thickness | 1–3 mm | — |
Thickness | 210–215 nm | — |
Pressure | 0.00001 Torr | — |
Pressure | 0–60000 atm | — |
barium boronitride
boronitride of alkali metal
lithium boronitride
cubic boron nitride single crystal
cBN
light emission wavelength range at 83 K |
| 210–235 nm |
hBN |
absorption peak 1 | 208 nm | hBN |
absorption peak 2 | 213 nm | hBN |
claimed maximum light emission peak (claim range: ≤235 nm) | 215 nm | hBN |
band gap of hBN (direct transition type semiconductor) | 5.8 eV | hBN |
Thickness | 210–235 nm | — |
Thickness | 210–220 nm | — |
Thickness | 200–2500 nm | — |
Thickness | 1–3 mm | — |
Thickness | 210–215 nm | — |
Pressure | 0.00001 Torr | — |
Pressure | 0–60000 atm | — |
barium boronitride
boronitride of alkali metal
lithium boronitride
cubic boron nitride single crystal
cBN
light emission wavelength range at 83 K |
| 210–235 nm |
hBN |
absorption peak 1 | 208 nm | hBN |
absorption peak 2 | 213 nm | hBN |
claimed maximum light emission peak (claim range: ≤235 nm) | 215 nm | hBN |
band gap of hBN (direct transition type semiconductor) | 5.8 eV | hBN |
Thickness | 210–235 nm | — |
Thickness | 210–220 nm | — |
Thickness | 200–2500 nm | — |
Thickness | 1–3 mm | — |
Thickness | 210–215 nm | — |
Pressure | 0.00001 Torr | — |
Pressure | 0–60000 atm | — |
barium boronitride
boronitride of alkali metal
lithium boronitride
cubic boron nitride single crystal
cBN
light emission wavelength range at 83 K |
| 210–235 nm |
hBN |
absorption peak 1 | 208 nm | hBN |
absorption peak 2 | 213 nm | hBN |
claimed maximum light emission peak (claim range: ≤235 nm) | 215 nm | hBN |
band gap of hBN (direct transition type semiconductor) | 5.8 eV | hBN |
Thickness | 210–235 nm | — |
Thickness | 210–220 nm | — |
Thickness | 200–2500 nm | — |
Thickness | 1–3 mm | — |
Thickness | 210–215 nm | — |
Pressure | 0.00001 Torr | — |
Pressure | 0–60000 atm | — |