Research paper
TheoreticalComputed PhononEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 properties
1 property
5 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 7eV | — | |||
| Optical Band Gap | tunable band gap | 0.15eV | — | |||
| PL Peak | 1s exciton binding energy | 0.255eV | — | |||
| PL Peak | 1s exciton energy | -1.31eV | — | |||
| PL Peak | 2s exciton energy | -0.426eV | — | |||
| PL Peak | 2p+ exciton energy | -0.551eV | — | |||
| PL Peak | 2p- exciton energy | -0.551eV | — | |||
| PL Peak | 1s exciton energy (BSE) | -1.27eV | — | |||
| PL Peak | 2s exciton energy (BSE) | -0.445eV | — | |||
| PL Peak | 2p+ exciton energy (BSE) | -0.549eV | — | |||
| PL Peak | 2p- exciton energy (BSE) | -0.635eV | — | |||
| PL Peak | 1s exciton binding energy | -16.3meV | — | |||
| PL Peak | 2s exciton binding energy | -5.36meV | — | |||
| PL Peak | 2p+ exciton binding energy | -9.35meV | — | |||
| PL Peak | 2p- exciton binding energy | -10.3meV | — | |||
| Pl Peak Fwhm | PL peak | 52meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.3meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.1meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric environment engineering via 2D material heterostructure formation on hybrid photonic crystal nanocavity
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Native antisite defects in h-BN
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures
Terahertz phonon engineering with van der Waals heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 properties
1 property
5 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 7eV | — | |||
| Optical Band Gap | tunable band gap | 0.15eV | — | |||
| PL Peak | 1s exciton binding energy | 0.255eV | — | |||
| PL Peak | 1s exciton energy | -1.31eV | — | |||
| PL Peak | 2s exciton energy | -0.426eV | — | |||
| PL Peak | 2p+ exciton energy | -0.551eV | — | |||
| PL Peak | 2p- exciton energy | -0.551eV | — | |||
| PL Peak | 1s exciton energy (BSE) | -1.27eV | — | |||
| PL Peak | 2s exciton energy (BSE) | -0.445eV | — | |||
| PL Peak | 2p+ exciton energy (BSE) | -0.549eV | — | |||
| PL Peak | 2p- exciton energy (BSE) | -0.635eV | — | |||
| PL Peak | 1s exciton binding energy | -16.3meV | — | |||
| PL Peak | 2s exciton binding energy | -5.36meV | — | |||
| PL Peak | 2p+ exciton binding energy | -9.35meV | — | |||
| PL Peak | 2p- exciton binding energy | -10.3meV | — | |||
| Pl Peak Fwhm | PL peak | 52meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.3meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.1meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric environment engineering via 2D material heterostructure formation on hybrid photonic crystal nanocavity
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Native antisite defects in h-BN
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures
Terahertz phonon engineering with van der Waals heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 properties
1 property
5 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 7eV | — | |||
| Optical Band Gap | tunable band gap | 0.15eV | — | |||
| PL Peak | 1s exciton binding energy | 0.255eV | — | |||
| PL Peak | 1s exciton energy | -1.31eV | — | |||
| PL Peak | 2s exciton energy | -0.426eV | — | |||
| PL Peak | 2p+ exciton energy | -0.551eV | — | |||
| PL Peak | 2p- exciton energy | -0.551eV | — | |||
| PL Peak | 1s exciton energy (BSE) | -1.27eV | — | |||
| PL Peak | 2s exciton energy (BSE) | -0.445eV | — | |||
| PL Peak | 2p+ exciton energy (BSE) | -0.549eV | — | |||
| PL Peak | 2p- exciton energy (BSE) | -0.635eV | — | |||
| PL Peak | 1s exciton binding energy | -16.3meV | — | |||
| PL Peak | 2s exciton binding energy | -5.36meV | — | |||
| PL Peak | 2p+ exciton binding energy | -9.35meV | — | |||
| PL Peak | 2p- exciton binding energy | -10.3meV | — | |||
| Pl Peak Fwhm | PL peak | 52meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.3meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.1meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric environment engineering via 2D material heterostructure formation on hybrid photonic crystal nanocavity
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Native antisite defects in h-BN
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures
Terahertz phonon engineering with van der Waals heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 properties
1 property
5 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 7eV | — | |||
| Optical Band Gap | tunable band gap | 0.15eV | — | |||
| PL Peak | 1s exciton binding energy | 0.255eV | — | |||
| PL Peak | 1s exciton energy | -1.31eV | — | |||
| PL Peak | 2s exciton energy | -0.426eV | — | |||
| PL Peak | 2p+ exciton energy | -0.551eV | — | |||
| PL Peak | 2p- exciton energy | -0.551eV | — | |||
| PL Peak | 1s exciton energy (BSE) | -1.27eV | — | |||
| PL Peak | 2s exciton energy (BSE) | -0.445eV | — | |||
| PL Peak | 2p+ exciton energy (BSE) | -0.549eV | — | |||
| PL Peak | 2p- exciton energy (BSE) | -0.635eV | — | |||
| PL Peak | 1s exciton binding energy | -16.3meV | — | |||
| PL Peak | 2s exciton binding energy | -5.36meV | — | |||
| PL Peak | 2p+ exciton binding energy | -9.35meV | — | |||
| PL Peak | 2p- exciton binding energy | -10.3meV | — | |||
| Pl Peak Fwhm | PL peak | 52meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.3meV | — | — | — | — |
| Pl Peak Fwhm | PL peak | 0.1meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric environment engineering via 2D material heterostructure formation on hybrid photonic crystal nanocavity
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Native antisite defects in h-BN
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures
Terahertz phonon engineering with van der Waals heterostructures