Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations8 properties1 figure
2 characterizations4 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Intermediate Excited State Relaxation Dynamics of Boron Vacancy Spin Defects in Hexagonal Boron Nitride
Secure Quantum Key Distribution Using a Room-Temperature Quantum Emitter
Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation
Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride
Crossover from inhomogeneous to homogeneous response of a resonantly driven hBN quantum emitter
Deterministic generation of single B centers in hBN by one-to-one conversion from UV centers
Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Time-Resolved Stokes Analysis of Single Photon Emitters in Hexagonal Boron Nitride
Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations8 properties1 figure
2 characterizations4 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Intermediate Excited State Relaxation Dynamics of Boron Vacancy Spin Defects in Hexagonal Boron Nitride
Secure Quantum Key Distribution Using a Room-Temperature Quantum Emitter
Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation
Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride
Crossover from inhomogeneous to homogeneous response of a resonantly driven hBN quantum emitter
Deterministic generation of single B centers in hBN by one-to-one conversion from UV centers
Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Time-Resolved Stokes Analysis of Single Photon Emitters in Hexagonal Boron Nitride
Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations8 properties1 figure
2 characterizations4 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Intermediate Excited State Relaxation Dynamics of Boron Vacancy Spin Defects in Hexagonal Boron Nitride
Secure Quantum Key Distribution Using a Room-Temperature Quantum Emitter
Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation
Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride
Crossover from inhomogeneous to homogeneous response of a resonantly driven hBN quantum emitter
Deterministic generation of single B centers in hBN by one-to-one conversion from UV centers
Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Time-Resolved Stokes Analysis of Single Photon Emitters in Hexagonal Boron Nitride
Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations8 properties1 figure
2 characterizations4 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Intermediate Excited State Relaxation Dynamics of Boron Vacancy Spin Defects in Hexagonal Boron Nitride
Secure Quantum Key Distribution Using a Room-Temperature Quantum Emitter
Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation
Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride
Crossover from inhomogeneous to homogeneous response of a resonantly driven hBN quantum emitter
Deterministic generation of single B centers in hBN by one-to-one conversion from UV centers
Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS
Time-Resolved Stokes Analysis of Single Photon Emitters in Hexagonal Boron Nitride
Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride