Research paperExperimental CharacterizationRoom temperature electroluminescence from isolated colour centres in van der Waals semiconductorsGyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder et al.2007·10.1021/acs.nanolett.4c03824·arXiv:2311.00549AbstractDefects in wide bandgap semiconductors are promising for solid-state quantum optical technologies, but electrical excitation is challenging. This work demonstrates room-temperature electroluminescence from isolated colour centres in carbon-doped hexagonal boron nitride using vertical graphene-hBN-graphene tunnel junctions, with narrowband emission spanning the visible to near-infrared and stable operation over hours.Read more
Vertical vdW tunnel-junction device comprising graphene / hBN / carbon-doped hBN / hBN / graphene, used for room-temperature electroluminescence and transport measurements.3 characterizations6 properties3 figuresExperimentalhBNStudied MaterialCCapping Or ContacthBN:CStudied MaterialExpand
Research paperExperimental CharacterizationRoom temperature electroluminescence from isolated colour centres in van der Waals semiconductorsGyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder et al.2007·10.1021/acs.nanolett.4c03824·arXiv:2311.00549AbstractDefects in wide bandgap semiconductors are promising for solid-state quantum optical technologies, but electrical excitation is challenging. This work demonstrates room-temperature electroluminescence from isolated colour centres in carbon-doped hexagonal boron nitride using vertical graphene-hBN-graphene tunnel junctions, with narrowband emission spanning the visible to near-infrared and stable operation over hours.Read more
Vertical vdW tunnel-junction device comprising graphene / hBN / carbon-doped hBN / hBN / graphene, used for room-temperature electroluminescence and transport measurements.3 characterizations6 properties3 figuresExperimentalhBNStudied MaterialCCapping Or ContacthBN:CStudied MaterialExpand
Research paperExperimental CharacterizationRoom temperature electroluminescence from isolated colour centres in van der Waals semiconductorsGyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder et al.2007·10.1021/acs.nanolett.4c03824·arXiv:2311.00549AbstractDefects in wide bandgap semiconductors are promising for solid-state quantum optical technologies, but electrical excitation is challenging. This work demonstrates room-temperature electroluminescence from isolated colour centres in carbon-doped hexagonal boron nitride using vertical graphene-hBN-graphene tunnel junctions, with narrowband emission spanning the visible to near-infrared and stable operation over hours.Read more
Vertical vdW tunnel-junction device comprising graphene / hBN / carbon-doped hBN / hBN / graphene, used for room-temperature electroluminescence and transport measurements.3 characterizations6 properties3 figuresExperimentalhBNStudied MaterialCCapping Or ContacthBN:CStudied MaterialExpand
Research paperExperimental CharacterizationRoom temperature electroluminescence from isolated colour centres in van der Waals semiconductorsGyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder et al.2007·10.1021/acs.nanolett.4c03824·arXiv:2311.00549AbstractDefects in wide bandgap semiconductors are promising for solid-state quantum optical technologies, but electrical excitation is challenging. This work demonstrates room-temperature electroluminescence from isolated colour centres in carbon-doped hexagonal boron nitride using vertical graphene-hBN-graphene tunnel junctions, with narrowband emission spanning the visible to near-infrared and stable operation over hours.Read more
Vertical vdW tunnel-junction device comprising graphene / hBN / carbon-doped hBN / hBN / graphene, used for room-temperature electroluminescence and transport measurements.3 characterizations6 properties3 figuresExperimentalhBNStudied MaterialCCapping Or ContacthBN:CStudied MaterialExpand