Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations5 properties6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations1 property6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Area Fraction | graphene surface coverage | 22.4% | — | |||
| Area Fraction | graphene surface coverage | 88.2% | — | |||
| Xps Absolute Binding Energy | — | 284.4eV | — | |||
| Xps Absolute Binding Energy | — | 283.8eV | — | |||
| Xps Absolute Binding Energy | — | 285.2eV | — | |||
| Xps Absolute Binding Energy | — | 286eV | — | |||
| Xps Binding Energy | C 1s | 284.4eV | — | — | ||
| Xps Binding Energy | C 1s | 283.8eV | — | — | ||
| Xps Binding Energy | C 1s | 285.2eV | — | — | ||
| Xps Binding Energy | C 1s | 286eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
Star-Mesh Quantized Hall Array Resistance Devices
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Nanoscale Terahertz Conductivity and Ultrafast Dynamics of Terahertz Plasmons in Periodic Arrays of Epitaxial Graphene Nanoribbons
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Wafer-Scale Single-Crystalline Monolayer Graphene
Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Ultra-Confinement of Polaritons in Single Atomic Layer Ag Photonic Quantum Dots
Intermediate diffusive-ballistic electron conduction around mesoscopic defects in graphene
Charge to spin conversion in atomically thin bismuth
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations5 properties6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations1 property6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Area Fraction | graphene surface coverage | 22.4% | — | |||
| Area Fraction | graphene surface coverage | 88.2% | — | |||
| Xps Absolute Binding Energy | — | 284.4eV | — | |||
| Xps Absolute Binding Energy | — | 283.8eV | — | |||
| Xps Absolute Binding Energy | — | 285.2eV | — | |||
| Xps Absolute Binding Energy | — | 286eV | — | |||
| Xps Binding Energy | C 1s | 284.4eV | — | — | ||
| Xps Binding Energy | C 1s | 283.8eV | — | — | ||
| Xps Binding Energy | C 1s | 285.2eV | — | — | ||
| Xps Binding Energy | C 1s | 286eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
Star-Mesh Quantized Hall Array Resistance Devices
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Nanoscale Terahertz Conductivity and Ultrafast Dynamics of Terahertz Plasmons in Periodic Arrays of Epitaxial Graphene Nanoribbons
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Wafer-Scale Single-Crystalline Monolayer Graphene
Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Ultra-Confinement of Polaritons in Single Atomic Layer Ag Photonic Quantum Dots
Intermediate diffusive-ballistic electron conduction around mesoscopic defects in graphene
Charge to spin conversion in atomically thin bismuth
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations5 properties6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations1 property6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Area Fraction | graphene surface coverage | 22.4% | — | |||
| Area Fraction | graphene surface coverage | 88.2% | — | |||
| Xps Absolute Binding Energy | — | 284.4eV | — | |||
| Xps Absolute Binding Energy | — | 283.8eV | — | |||
| Xps Absolute Binding Energy | — | 285.2eV | — | |||
| Xps Absolute Binding Energy | — | 286eV | — | |||
| Xps Binding Energy | C 1s | 284.4eV | — | — | ||
| Xps Binding Energy | C 1s | 283.8eV | — | — | ||
| Xps Binding Energy | C 1s | 285.2eV | — | — | ||
| Xps Binding Energy | C 1s | 286eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
Star-Mesh Quantized Hall Array Resistance Devices
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Nanoscale Terahertz Conductivity and Ultrafast Dynamics of Terahertz Plasmons in Periodic Arrays of Epitaxial Graphene Nanoribbons
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Wafer-Scale Single-Crystalline Monolayer Graphene
Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Ultra-Confinement of Polaritons in Single Atomic Layer Ag Photonic Quantum Dots
Intermediate diffusive-ballistic electron conduction around mesoscopic defects in graphene
Charge to spin conversion in atomically thin bismuth
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations5 properties6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations6 figures
3 preparations4 characterizations1 property6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Area Fraction | graphene surface coverage | 22.4% | — | |||
| Area Fraction | graphene surface coverage | 88.2% | — | |||
| Xps Absolute Binding Energy | — | 284.4eV | — | |||
| Xps Absolute Binding Energy | — | 283.8eV | — | |||
| Xps Absolute Binding Energy | — | 285.2eV | — | |||
| Xps Absolute Binding Energy | — | 286eV | — | |||
| Xps Binding Energy | C 1s | 284.4eV | — | — | ||
| Xps Binding Energy | C 1s | 283.8eV | — | — | ||
| Xps Binding Energy | C 1s | 285.2eV | — | — | ||
| Xps Binding Energy | C 1s | 286eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
Star-Mesh Quantized Hall Array Resistance Devices
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Nanoscale Terahertz Conductivity and Ultrafast Dynamics of Terahertz Plasmons in Periodic Arrays of Epitaxial Graphene Nanoribbons
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Wafer-Scale Single-Crystalline Monolayer Graphene
Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Ultra-Confinement of Polaritons in Single Atomic Layer Ag Photonic Quantum Dots
Intermediate diffusive-ballistic electron conduction around mesoscopic defects in graphene
Charge to spin conversion in atomically thin bismuth