Research paperExperimental GrowthExperimental CharacterizationConfinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC InterfaceZamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva, Dietrich R.T. Zahn et al.arXiv preprint·2026·arXiv:2602.16451AbstractConfinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Here, the authors demonstrate synthesis of large-area quasi-free-standing monolayer graphene via intercalation of two-dimensional Sn, distinguish direct intercalation from diffusion-driven expansion, and show temperature-dependent structural coupling between graphene and the Sn interface.Read more
Pristine zero-layer graphene on 4H-SiC(0001) used as the starting surface for Sn intercalation studies.1 preparation3 characterizations2 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
Direct-Sn-deposited intercalated region (A₁) that forms quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Diffusion-driven intercalated region (A₂) with higher crystalline quality quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Monolayer graphene reference sample grown epitaxially on 4H-SiC(0001).1 preparation3 characterizations2 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationConfinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC InterfaceZamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva, Dietrich R.T. Zahn et al.arXiv preprint·2026·arXiv:2602.16451AbstractConfinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Here, the authors demonstrate synthesis of large-area quasi-free-standing monolayer graphene via intercalation of two-dimensional Sn, distinguish direct intercalation from diffusion-driven expansion, and show temperature-dependent structural coupling between graphene and the Sn interface.Read more
Pristine zero-layer graphene on 4H-SiC(0001) used as the starting surface for Sn intercalation studies.1 preparation3 characterizations2 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
Direct-Sn-deposited intercalated region (A₁) that forms quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Diffusion-driven intercalated region (A₂) with higher crystalline quality quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Monolayer graphene reference sample grown epitaxially on 4H-SiC(0001).1 preparation3 characterizations2 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationConfinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC InterfaceZamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva, Dietrich R.T. Zahn et al.arXiv preprint·2026·arXiv:2602.16451AbstractConfinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Here, the authors demonstrate synthesis of large-area quasi-free-standing monolayer graphene via intercalation of two-dimensional Sn, distinguish direct intercalation from diffusion-driven expansion, and show temperature-dependent structural coupling between graphene and the Sn interface.Read more
Pristine zero-layer graphene on 4H-SiC(0001) used as the starting surface for Sn intercalation studies.1 preparation3 characterizations2 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
Direct-Sn-deposited intercalated region (A₁) that forms quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Diffusion-driven intercalated region (A₂) with higher crystalline quality quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Monolayer graphene reference sample grown epitaxially on 4H-SiC(0001).1 preparation3 characterizations2 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationConfinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC InterfaceZamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva, Dietrich R.T. Zahn et al.arXiv preprint·2026·arXiv:2602.16451AbstractConfinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Here, the authors demonstrate synthesis of large-area quasi-free-standing monolayer graphene via intercalation of two-dimensional Sn, distinguish direct intercalation from diffusion-driven expansion, and show temperature-dependent structural coupling between graphene and the Sn interface.Read more
Pristine zero-layer graphene on 4H-SiC(0001) used as the starting surface for Sn intercalation studies.1 preparation3 characterizations2 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
Direct-Sn-deposited intercalated region (A₁) that forms quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Diffusion-driven intercalated region (A₂) with higher crystalline quality quasi-free-standing monolayer graphene above a Sn interfacial layer.3 preparations3 characterizations4 properties2 figuresExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / DielectricExpand
Monolayer graphene reference sample grown epitaxially on 4H-SiC(0001).1 preparation3 characterizations2 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand