Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Zamin Mamiyev; Niclas Tilgner; Narmina O. Balayeva; Dietrich R.T. Zahn; Thomas Seyller; Christoph Tegenkamp

doi:10.48550/arXiv.2602.16451

Paper details

Research paper

Experimental GrowthExperimental Characterization

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Zamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva, Dietrich R.T. Zahn et al.

arXiv·2026·arXiv:2602.16451

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

2 preparations2 characterizations2 figures

ExperimentalCStudied MaterialSiCSubstrate / Dielectric

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

3 preparations4 characterizations17 properties2 figures

ExperimentalCStudied MaterialSnStudied MaterialSiCSubstrate / Dielectric

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

2 preparations1 characterization1 figure

ReferenceCStudied MaterialSiCSubstrate / Dielectric

Materials

graphene

Studied Material

Also known as

ZLGQFMLGMLG

Variables

layer_variants= zero-layer graphene,quasi-free-standing monolayer graphene,monolayer graphene

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	Sn interface phonon	40cm⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	1.9	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	0.85	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	410000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	180000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	8.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	13.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Thermal Expansion Coefficient	effective linear TEC	10.510⁻⁶ K⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	Sn interface phonon	40cm⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	1.9	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	0.85	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	410000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	180000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	8.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	13.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Thermal Expansion Coefficient	effective linear TEC	10.510⁻⁶ K⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	Sn interface phonon	40cm⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	1.9	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	0.85	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	410000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	180000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	8.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	13.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Thermal Expansion Coefficient	effective linear TEC	10.510⁻⁶ K⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	Sn interface phonon	40cm⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	1.9	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Intensity Ratio	I(D)/I(G)	0.85	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	G	1575cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	2D	2640cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Raman Peak	D	1330cm⁻¹	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	410000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Fet Carrier Concentration	defect density nD	180000000000cm⁻²	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	8.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Distance Between Defects	LD	13.5nm	C	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—
Thermal Expansion Coefficient	effective linear TEC	10.510⁻⁶ K⁻¹	Sn	Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), includin	—

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Samples

Pristine zero-layer graphene on 4H-SiC(0001) prior to Sn intercalation.

Sn-intercalated QFMLG/Sn interface on 4H-SiC(0001), including directly deposited/intercalated area (A₁) and diffusion-driven intercalated area under the shadow mask (A₂).

Epitaxial monolayer graphene reference sample grown on 4H-SiC(0001).

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

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