METHOD FOR PREPARING STRUCTURED GRAPHENE ON SiC SUBSTRATE BASED ON Cl2 REACTION

Hui Guo

Patent

Atlas literature

Patent

US 9,951,418

METHOD FOR PREPARING STRUCTURED GRAPHENE ON SiC SUBSTRATE BASED ON Cl₂ REACTION

Hui Guo

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

7 independent · 13 dependent

1
IndependentSiCSiO₂Cl₂graphene
A method for preparing structured graphene on SiC substrate based on C l 2 reaction, characterized in that said process comprises the following steps: (1) performing cleaning to a SiC sample chip to remove contaminants on its surface; (2) depositing a layer of Si O 2 with a thickness of 0.4-1.2 m as a mask on the surface of the cleaned SiC sample chip by a Plasma Enhanced Chemical Vapor Deposition (P EC VD) method; (3) coating a layer of photoresist on the surface of the mask; photo-engraving a ﬁgure window on the mask in accordance with the shape of an expected device substrate to expose the SiC and form a structured pattern; (4) placing the windowed sample chip in a quartz tube, heating the windowed sample chip to 700-1100 ° C for 3-8 minutes as a mixed gas of Ar and C l 2 is ﬂowed into the quartz tube, and C l 2 is reacted with the bare SiC to generate a carbon ﬁlm; (5) arranging the generated carbon ﬁlm in Ar gas, annealing for 10-30 m in under a temperature of 1000-1200 ° C, wherein the carbon ﬁlm on the window is reconﬁgured to graphene so as to obtain a structured graphene.
1. 2
  Dependent← claim 1SiC
  The method for preparing structured graphene on SiC substrate based on C l 2 reaction according to claim 1, characterized in that said step (1) performing cleaning to a SiC sample chip is, ﬁrstly the SiC sample chip is soaked for 10-30 minutes by using reagent N H₄₀ H+H202, then taken out and dried to remove the organic residue on the sample surface, and then the sample is soaked in reagent HCl+H₂ 0 2 for 10-30 minutes, then taken out and dried to remove ionic contaminant.
2. 3
  Dependent← claim 1SiO₂
  McDonnell 300 3. The method for preparing structured graphene on SiC substrate based on C l 2 reaction according to claim 1, characterized in that in said step (2), the condition of depositing Si O 2 by PECVD method is, the ﬂow rate of SiH4, N₂₀ and N₂ is respectively 30s c cm, 60sc c m and 200s c cm, the pressure of a reaction chamber is 3.0Pa, RF power is 100W, the deposition temperature is 150 ° C and the deposition time is 20- 100 minutes.
3. 4
  Dependent← claim 1SiO₂
  The method for preparing structured graphene on SiC substrate based on C l 2 reaction according to claim 1, characterized in that in said step (2), the condition of depositing Si O 2 by PECVD method is, the ﬂow rate of SiH4, N₂₀ and N₂ is respectively 8-45s c cm, 35-450sc c m and 150-565 sccm, the pressure of a reaction chamber is 2- 10 Pa, RF power is 3 0-220W, the deposition temperature is 100-300 ° C and the deposition time is 20- 100 minutes.
4. 7
  Dependent← claim 1SiCCl₂
  The method for preparing structured graphene on SiC substrate based on C l 2 reaction according to claim 1, characterized in that in step (4), the ﬂow rate of the ﬂowed Ar and Cl₂ is respectively 95-98 sccm and 2-5 sccm.
5. 10
  Dependent← claim 1
  The method for preparing structured graphene on SiC substrate based on Cl 2 reaction according to claim 1, characterized in that in step (5), the ﬂow rate of Ar when annealing is 25-100 sccm.
6. 16
  Dependent← claim 1SiC
  McDonnell 300 16. The method for preparing structured graphene on SiC substrate based on Cl 2 reaction according to claim 1, characterized in that the SiC sample chip has a crystal type of 4 H- SiC or 6 H -SiC.
5
Independent
canceled
6
Independent
canceled
9
Independent
McDonnell 300 9. canceled
12
Independent
canceled
15
Independent
canceled
20
Independent
canceled sample chip has a crystal type of 4 H- SiC or 6 on SiC substrate based on Cl 2 reaction sample chip has a crystal type of 4 H- SiC or 6 on SiC substrate based on Cl 2 reaction SiC sample chip has a crystal type of 4 H- SiC or 6

Materials

Materials described outside the worked examples.

SiC

Substrate

SiO₂ mask

SiO₂

Mask Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Pecvd Deposition

Step 1

Temperature

150°C

Duration

20, 100 min

Ambient

SiH4/N2O/N2

Process details

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	700–1100 °C	—
Duration

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR PREPARING STRUCTURED GRAPHENE ON SiC SUBSTRATE BASED ON Cl2 REACTION | Matter42 Literature