Patent
US 8,632,855METHODS OF PREPARING A GRAPHENE SHEET
Xianyu Wenxu
US
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Atlas literature
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US 8,632,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using carbon nanotubes according to example …
FIGS. 2A and 2B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using fullerenes according to example …
FIG. 3 is a cross-sectional view for explaining a principle of forming a graphene (or carbon-based) sheet if an annealing process is performed on carbon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of the Claims 1. A method of preparing a two-dimensional (2D) carbon-based sheet, the method comprising: aligning a plurality of carbon-containing materials on a substrate, the plurality of carbon-containing carbon materials being at least one selected from the group consisting of carbon nanotubes and fullerenes, wherein the ali g nin g of the plurality of carbon-containing materials includes arranging a plurality of metal catalyst particles on the substrate, and su p plying a gaseous carbon source to the substrate having the plurality of metal catalyst particles thereon; and forming the 2D carbon-based sheet on the substrate by performing an annealing process on the substrate including the plurality of carbon-containing materials, wherein performing the annealing process includes heating portions of the substrate that contact the plurality of carbon-containing materials to a temperature that is greater than a zone melting temperature or a recrystallization temperature of the substrate.
The method of claim 1, wherein the 2D carbon-based sheet is a graphene sheet.
The method of claim 1, wherein the substrate is formed of at least one selected from the group consisting of silicon (Si), silicon carbide (SiC), U.S. Application No. 12/656,823 Atty. Dkt. No. 2557 SI -001377/US Page 4 of 11 silicon on insulator (SOI), amorphous-Si (a-Si), poly-Si, a-SiC, glass and combinations thereof.
(ORIGINAL) The method of claim 1, wherein the substrate is a quartz substrate or a glass substrate on which a thin film is formed of at least one selected from the group consisting of a-Si, poly-si, a-SiC, germanium (Ge), germanium carbide (GeC) and combinations thereof.
The method of claim 1, wherein the annealing process is a laser annealing process or a rapid thermal annealing (RTA) process.
(ORIGINAL) The method of claim 1, wherein the substrate mixes with the plurality of carbon-containing materials due to the annealing process to form silicon carbide (SiC).
The method of claim 1, wherein the plurality pattern.
The method of claim 1, wherein only the carbon-containing materials are annealed.
(NE w) The method of claim 1, wherein the
canceled
(PREVIOU S LY PRESENTED) The method of based material.
Materials described outside the worked examples.
carbon nanotubes
fullerenes
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,632,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using carbon nanotubes according to example …
FIGS. 2A and 2B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using fullerenes according to example …
FIG. 3 is a cross-sectional view for explaining a principle of forming a graphene (or carbon-based) sheet if an annealing process is performed on carbon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of the Claims 1. A method of preparing a two-dimensional (2D) carbon-based sheet, the method comprising: aligning a plurality of carbon-containing materials on a substrate, the plurality of carbon-containing carbon materials being at least one selected from the group consisting of carbon nanotubes and fullerenes, wherein the ali g nin g of the plurality of carbon-containing materials includes arranging a plurality of metal catalyst particles on the substrate, and su p plying a gaseous carbon source to the substrate having the plurality of metal catalyst particles thereon; and forming the 2D carbon-based sheet on the substrate by performing an annealing process on the substrate including the plurality of carbon-containing materials, wherein performing the annealing process includes heating portions of the substrate that contact the plurality of carbon-containing materials to a temperature that is greater than a zone melting temperature or a recrystallization temperature of the substrate.
The method of claim 1, wherein the 2D carbon-based sheet is a graphene sheet.
The method of claim 1, wherein the substrate is formed of at least one selected from the group consisting of silicon (Si), silicon carbide (SiC), U.S. Application No. 12/656,823 Atty. Dkt. No. 2557 SI -001377/US Page 4 of 11 silicon on insulator (SOI), amorphous-Si (a-Si), poly-Si, a-SiC, glass and combinations thereof.
(ORIGINAL) The method of claim 1, wherein the substrate is a quartz substrate or a glass substrate on which a thin film is formed of at least one selected from the group consisting of a-Si, poly-si, a-SiC, germanium (Ge), germanium carbide (GeC) and combinations thereof.
The method of claim 1, wherein the annealing process is a laser annealing process or a rapid thermal annealing (RTA) process.
(ORIGINAL) The method of claim 1, wherein the substrate mixes with the plurality of carbon-containing materials due to the annealing process to form silicon carbide (SiC).
The method of claim 1, wherein the plurality pattern.
The method of claim 1, wherein only the carbon-containing materials are annealed.
(NE w) The method of claim 1, wherein the
canceled
(PREVIOU S LY PRESENTED) The method of based material.
Materials described outside the worked examples.
carbon nanotubes
fullerenes
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,632,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using carbon nanotubes according to example …
FIGS. 2A and 2B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using fullerenes according to example …
FIG. 3 is a cross-sectional view for explaining a principle of forming a graphene (or carbon-based) sheet if an annealing process is performed on carbon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of the Claims 1. A method of preparing a two-dimensional (2D) carbon-based sheet, the method comprising: aligning a plurality of carbon-containing materials on a substrate, the plurality of carbon-containing carbon materials being at least one selected from the group consisting of carbon nanotubes and fullerenes, wherein the ali g nin g of the plurality of carbon-containing materials includes arranging a plurality of metal catalyst particles on the substrate, and su p plying a gaseous carbon source to the substrate having the plurality of metal catalyst particles thereon; and forming the 2D carbon-based sheet on the substrate by performing an annealing process on the substrate including the plurality of carbon-containing materials, wherein performing the annealing process includes heating portions of the substrate that contact the plurality of carbon-containing materials to a temperature that is greater than a zone melting temperature or a recrystallization temperature of the substrate.
The method of claim 1, wherein the 2D carbon-based sheet is a graphene sheet.
The method of claim 1, wherein the substrate is formed of at least one selected from the group consisting of silicon (Si), silicon carbide (SiC), U.S. Application No. 12/656,823 Atty. Dkt. No. 2557 SI -001377/US Page 4 of 11 silicon on insulator (SOI), amorphous-Si (a-Si), poly-Si, a-SiC, glass and combinations thereof.
(ORIGINAL) The method of claim 1, wherein the substrate is a quartz substrate or a glass substrate on which a thin film is formed of at least one selected from the group consisting of a-Si, poly-si, a-SiC, germanium (Ge), germanium carbide (GeC) and combinations thereof.
The method of claim 1, wherein the annealing process is a laser annealing process or a rapid thermal annealing (RTA) process.
(ORIGINAL) The method of claim 1, wherein the substrate mixes with the plurality of carbon-containing materials due to the annealing process to form silicon carbide (SiC).
The method of claim 1, wherein the plurality pattern.
The method of claim 1, wherein only the carbon-containing materials are annealed.
(NE w) The method of claim 1, wherein the
canceled
(PREVIOU S LY PRESENTED) The method of based material.
Materials described outside the worked examples.
carbon nanotubes
fullerenes
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,632,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using carbon nanotubes according to example …
FIGS. 2A and 2B are perspective views illustrating a method of preparing a graphene (or carbon-based) sheet by using fullerenes according to example …
FIG. 3 is a cross-sectional view for explaining a principle of forming a graphene (or carbon-based) sheet if an annealing process is performed on carbon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of the Claims 1. A method of preparing a two-dimensional (2D) carbon-based sheet, the method comprising: aligning a plurality of carbon-containing materials on a substrate, the plurality of carbon-containing carbon materials being at least one selected from the group consisting of carbon nanotubes and fullerenes, wherein the ali g nin g of the plurality of carbon-containing materials includes arranging a plurality of metal catalyst particles on the substrate, and su p plying a gaseous carbon source to the substrate having the plurality of metal catalyst particles thereon; and forming the 2D carbon-based sheet on the substrate by performing an annealing process on the substrate including the plurality of carbon-containing materials, wherein performing the annealing process includes heating portions of the substrate that contact the plurality of carbon-containing materials to a temperature that is greater than a zone melting temperature or a recrystallization temperature of the substrate.
The method of claim 1, wherein the 2D carbon-based sheet is a graphene sheet.
The method of claim 1, wherein the substrate is formed of at least one selected from the group consisting of silicon (Si), silicon carbide (SiC), U.S. Application No. 12/656,823 Atty. Dkt. No. 2557 SI -001377/US Page 4 of 11 silicon on insulator (SOI), amorphous-Si (a-Si), poly-Si, a-SiC, glass and combinations thereof.
(ORIGINAL) The method of claim 1, wherein the substrate is a quartz substrate or a glass substrate on which a thin film is formed of at least one selected from the group consisting of a-Si, poly-si, a-SiC, germanium (Ge), germanium carbide (GeC) and combinations thereof.
The method of claim 1, wherein the annealing process is a laser annealing process or a rapid thermal annealing (RTA) process.
(ORIGINAL) The method of claim 1, wherein the substrate mixes with the plurality of carbon-containing materials due to the annealing process to form silicon carbide (SiC).
The method of claim 1, wherein the plurality pattern.
The method of claim 1, wherein only the carbon-containing materials are annealed.
(NE w) The method of claim 1, wherein the
canceled
(PREVIOU S LY PRESENTED) The method of based material.
Materials described outside the worked examples.
carbon nanotubes
fullerenes
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
metal catalyst particles
gaseous carbon source
graphene sheet
substrate material (Si, SiC, SOI, a-Si, poly-Si, a-SiC, glass)
quartz or glass substrate with thin film of a-Si, poly-Si, a-SiC, Ge, or GeC
silicon carbide
SiC
acetylene or methane
metal catalyst particles
gaseous carbon source
graphene sheet
substrate material (Si, SiC, SOI, a-Si, poly-Si, a-SiC, glass)
quartz or glass substrate with thin film of a-Si, poly-Si, a-SiC, Ge, or GeC
silicon carbide
SiC
acetylene or methane
metal catalyst particles
gaseous carbon source
graphene sheet
substrate material (Si, SiC, SOI, a-Si, poly-Si, a-SiC, glass)
quartz or glass substrate with thin film of a-Si, poly-Si, a-SiC, Ge, or GeC
silicon carbide
SiC
acetylene or methane
metal catalyst particles
gaseous carbon source
graphene sheet
substrate material (Si, SiC, SOI, a-Si, poly-Si, a-SiC, glass)
quartz or glass substrate with thin film of a-Si, poly-Si, a-SiC, Ge, or GeC
silicon carbide
SiC
acetylene or methane