Research paperExperimental GrowthExperimental CharacterizationNovel structures of Gallenene intercalated in epitaxial GrapheneEmanuele Pompei, Katarzyna Skibińska, Giulio Senesi, Ylea Vlamidis et al.arXiv·2025·10.1002/smll.202505640·arXiv:2505.05042AbstractThe creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the silicon carbide substrate are investigated. The coexistence of different gallenene phases, including b010-gallenene and the elusive high-pressure Ga(III) phase, is identified. This work sheds new light on the formation of two-dimensional gallium and provides a platform for investigating the exotic electronic and optical properties of confined gallenene.Read more
Intercalated epitaxial graphene region showing two layers of gallium beneath monolayer graphene (2L-Ga@MLG) on SiC.2 preparations4 characterizations6 properties4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Intercalated epitaxial graphene region showing one layer of gallium beneath monolayer graphene (1L-Ga@MLG) on SiC.2 preparations3 characterizations1 property4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Pristine epitaxial monolayer graphene reference area on SiC used as the un-intercalated baseline.3 characterizations4 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNovel structures of Gallenene intercalated in epitaxial GrapheneEmanuele Pompei, Katarzyna Skibińska, Giulio Senesi, Ylea Vlamidis et al.arXiv·2025·10.1002/smll.202505640·arXiv:2505.05042AbstractThe creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the silicon carbide substrate are investigated. The coexistence of different gallenene phases, including b010-gallenene and the elusive high-pressure Ga(III) phase, is identified. This work sheds new light on the formation of two-dimensional gallium and provides a platform for investigating the exotic electronic and optical properties of confined gallenene.Read more
Intercalated epitaxial graphene region showing two layers of gallium beneath monolayer graphene (2L-Ga@MLG) on SiC.2 preparations4 characterizations6 properties4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Intercalated epitaxial graphene region showing one layer of gallium beneath monolayer graphene (1L-Ga@MLG) on SiC.2 preparations3 characterizations1 property4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Pristine epitaxial monolayer graphene reference area on SiC used as the un-intercalated baseline.3 characterizations4 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNovel structures of Gallenene intercalated in epitaxial GrapheneEmanuele Pompei, Katarzyna Skibińska, Giulio Senesi, Ylea Vlamidis et al.arXiv·2025·10.1002/smll.202505640·arXiv:2505.05042AbstractThe creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the silicon carbide substrate are investigated. The coexistence of different gallenene phases, including b010-gallenene and the elusive high-pressure Ga(III) phase, is identified. This work sheds new light on the formation of two-dimensional gallium and provides a platform for investigating the exotic electronic and optical properties of confined gallenene.Read more
Intercalated epitaxial graphene region showing two layers of gallium beneath monolayer graphene (2L-Ga@MLG) on SiC.2 preparations4 characterizations6 properties4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Intercalated epitaxial graphene region showing one layer of gallium beneath monolayer graphene (1L-Ga@MLG) on SiC.2 preparations3 characterizations1 property4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Pristine epitaxial monolayer graphene reference area on SiC used as the un-intercalated baseline.3 characterizations4 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNovel structures of Gallenene intercalated in epitaxial GrapheneEmanuele Pompei, Katarzyna Skibińska, Giulio Senesi, Ylea Vlamidis et al.arXiv·2025·10.1002/smll.202505640·arXiv:2505.05042AbstractThe creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the silicon carbide substrate are investigated. The coexistence of different gallenene phases, including b010-gallenene and the elusive high-pressure Ga(III) phase, is identified. This work sheds new light on the formation of two-dimensional gallium and provides a platform for investigating the exotic electronic and optical properties of confined gallenene.Read more
Intercalated epitaxial graphene region showing two layers of gallium beneath monolayer graphene (2L-Ga@MLG) on SiC.2 preparations4 characterizations6 properties4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Intercalated epitaxial graphene region showing one layer of gallium beneath monolayer graphene (1L-Ga@MLG) on SiC.2 preparations3 characterizations1 property4 figuresExperimentalGaStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Pristine epitaxial monolayer graphene reference area on SiC used as the un-intercalated baseline.3 characterizations4 figuresReferenceCStudied MaterialSiCSubstrate / DielectricExpand