Research paper
Experimental GrowthExperimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate To Intercalated Layer Step Height | MLG to 1L-Ga@MLG | 0.201nm | — | |||
| Interlayer Step Height | 1L-Ga@MLG to 2L-Ga@MLG | 0.203nm | — | |||
| Substrate To Intercalated Layer Step Height | MLG to 2L-Ga@MLG | 0.4nm | — | |||
| Lateral Repeat Length | a-axis of Ga(III) centered rectangular lattice | 0.41nm | — | |||
| Lateral Repeat Length | b-axis of Ga(III) centered rectangular lattice | 0.51nm | — | |||
| Lattice Angle | Ga(III) unit-cell angle | 102deg | — | |||
| Coverage Fraction | intercalated-area coverage | 50% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate To Intercalated Layer Step Height | MLG to 1L-Ga@MLG | 0.201nm | — | |||
| Interlayer Step Height | 1L-Ga@MLG to 2L-Ga@MLG | 0.203nm | — | |||
| Substrate To Intercalated Layer Step Height | MLG to 2L-Ga@MLG | 0.4nm | — | |||
| Lateral Repeat Length | a-axis of Ga(III) centered rectangular lattice | 0.41nm | — | |||
| Lateral Repeat Length | b-axis of Ga(III) centered rectangular lattice | 0.51nm | — | |||
| Lattice Angle | Ga(III) unit-cell angle | 102deg | — | |||
| Coverage Fraction | intercalated-area coverage | 50% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate To Intercalated Layer Step Height | MLG to 1L-Ga@MLG | 0.201nm | — | |||
| Interlayer Step Height | 1L-Ga@MLG to 2L-Ga@MLG | 0.203nm | — | |||
| Substrate To Intercalated Layer Step Height | MLG to 2L-Ga@MLG | 0.4nm | — | |||
| Lateral Repeat Length | a-axis of Ga(III) centered rectangular lattice | 0.41nm | — | |||
| Lateral Repeat Length | b-axis of Ga(III) centered rectangular lattice | 0.51nm | — | |||
| Lattice Angle | Ga(III) unit-cell angle | 102deg | — | |||
| Coverage Fraction | intercalated-area coverage | 50% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate To Intercalated Layer Step Height | MLG to 1L-Ga@MLG | 0.201nm | — | |||
| Interlayer Step Height | 1L-Ga@MLG to 2L-Ga@MLG | 0.203nm | — | |||
| Substrate To Intercalated Layer Step Height | MLG to 2L-Ga@MLG | 0.4nm | — | |||
| Lateral Repeat Length | a-axis of Ga(III) centered rectangular lattice | 0.41nm | — | |||
| Lateral Repeat Length | b-axis of Ga(III) centered rectangular lattice | 0.51nm | — | |||
| Lattice Angle | Ga(III) unit-cell angle | 102deg | — | |||
| Coverage Fraction | intercalated-area coverage | 50% | — |
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