Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations4 characterizations2 properties1 figure
5 preparations4 characterizations2 properties1 figure
No measurements recorded
No measurements recorded
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.068angstrom | — | |||
| Thermal Growth Temperature | SiC sublimation growth temperature | 1730°C | — | |||
| Deposition Temperature | Eu deposition temperature | 250°C | — | |||
| Deposition Temperature | Sr deposition temperature | 150°C | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations4 characterizations2 properties1 figure
5 preparations4 characterizations2 properties1 figure
No measurements recorded
No measurements recorded
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.068angstrom | — | |||
| Thermal Growth Temperature | SiC sublimation growth temperature | 1730°C | — | |||
| Deposition Temperature | Eu deposition temperature | 250°C | — | |||
| Deposition Temperature | Sr deposition temperature | 150°C | — |
Related documents with shared materials, methods, properties, or citations.
Novel structures of Gallenene intercalated in epitaxial Graphene
Remote epitaxial frustration
Magnetic evolution of Cr2Te3 epitaxially grown on graphene with post-growth annealing
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Host-atom-driven transformation of a honeycomb oxide into a dodecagonal quasicrystal
Monolayer control of spin-charge conversion in van der Waals heterostructures
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Controlling Mixed Mo/MoS2 Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Cold Seeded Epitaxy and Flexomagnetism in Smooth GdAuGe Membranes Exfoliated from graphene/Ge(111)
Monolayer Magnetic Metal with Scalable Conductivity
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations4 characterizations2 properties1 figure
5 preparations4 characterizations2 properties1 figure
No measurements recorded
No measurements recorded
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.068angstrom | — | |||
| Thermal Growth Temperature | SiC sublimation growth temperature | 1730°C | — | |||
| Deposition Temperature | Eu deposition temperature | 250°C | — | |||
| Deposition Temperature | Sr deposition temperature | 150°C | — |
Related documents with shared materials, methods, properties, or citations.
Novel structures of Gallenene intercalated in epitaxial Graphene
Remote epitaxial frustration
Magnetic evolution of Cr2Te3 epitaxially grown on graphene with post-growth annealing
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Host-atom-driven transformation of a honeycomb oxide into a dodecagonal quasicrystal
Monolayer control of spin-charge conversion in van der Waals heterostructures
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Controlling Mixed Mo/MoS2 Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Cold Seeded Epitaxy and Flexomagnetism in Smooth GdAuGe Membranes Exfoliated from graphene/Ge(111)
Monolayer Magnetic Metal with Scalable Conductivity
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations4 characterizations2 properties1 figure
5 preparations4 characterizations2 properties1 figure
No measurements recorded
No measurements recorded
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.068angstrom | — | |||
| Thermal Growth Temperature | SiC sublimation growth temperature | 1730°C | — | |||
| Deposition Temperature | Eu deposition temperature | 250°C | — | |||
| Deposition Temperature | Sr deposition temperature | 150°C | — |
Related documents with shared materials, methods, properties, or citations.
Novel structures of Gallenene intercalated in epitaxial Graphene
Remote epitaxial frustration
Magnetic evolution of Cr2Te3 epitaxially grown on graphene with post-growth annealing
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Host-atom-driven transformation of a honeycomb oxide into a dodecagonal quasicrystal
Monolayer control of spin-charge conversion in van der Waals heterostructures
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Controlling Mixed Mo/MoS2 Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Cold Seeded Epitaxy and Flexomagnetism in Smooth GdAuGe Membranes Exfoliated from graphene/Ge(111)
Monolayer Magnetic Metal with Scalable Conductivity
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