Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2