Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Work Function | pristine HC on Pt(111) | 6.05eV | — | |||
| Work Function | extrapolated pristine HC work function | 6.1eV | — | |||
| Work Function | Ba-decorated transformed OQC | 3.95eV | — | |||
| Work Function | Eu-decorated TiOx HC | 5.1eV | — | |||
| Dipole Moment | per Eu ion | 2.36Debye | — | |||
| Work Function Slope | slope of Φ(ΘRing) | -2.91eV | — | |||
| Coverage Fraction | ring coverage for full quasicrystal conversion | 0.73 | — | |||
| Coverage Fraction | one-third ring coverage | 0.33 | — | |||
| Coverage Fraction | labyrinth phase coverage | 0.5 | — | |||
| Coverage Fraction | two-thirds ring coverage | 0.67 | — | |||
| Lattice Constant | HC lattice parameter on Pt(111) | 5.95angstrom | — | |||
| Lattice Constant | HC lattice spacing on Pd(111) | 5.8angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Work Function | pristine HC on Pt(111) | 6.05eV | — | |||
| Work Function | extrapolated pristine HC work function | 6.1eV | — | |||
| Work Function | Ba-decorated transformed OQC | 3.95eV | — | |||
| Work Function | Eu-decorated TiOx HC | 5.1eV | — | |||
| Dipole Moment | per Eu ion | 2.36Debye | — | |||
| Work Function Slope | slope of Φ(ΘRing) | -2.91eV | — | |||
| Coverage Fraction | ring coverage for full quasicrystal conversion | 0.73 | — | |||
| Coverage Fraction | one-third ring coverage | 0.33 | — | |||
| Coverage Fraction | labyrinth phase coverage | 0.5 | — | |||
| Coverage Fraction | two-thirds ring coverage | 0.67 | — | |||
| Lattice Constant | HC lattice parameter on Pt(111) | 5.95angstrom | — | |||
| Lattice Constant | HC lattice spacing on Pd(111) | 5.8angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Work Function | pristine HC on Pt(111) | 6.05eV | — | |||
| Work Function | extrapolated pristine HC work function | 6.1eV | — | |||
| Work Function | Ba-decorated transformed OQC | 3.95eV | — | |||
| Work Function | Eu-decorated TiOx HC | 5.1eV | — | |||
| Dipole Moment | per Eu ion | 2.36Debye | — | |||
| Work Function Slope | slope of Φ(ΘRing) | -2.91eV | — | |||
| Coverage Fraction | ring coverage for full quasicrystal conversion | 0.73 | — | |||
| Coverage Fraction | one-third ring coverage | 0.33 | — | |||
| Coverage Fraction | labyrinth phase coverage | 0.5 | — | |||
| Coverage Fraction | two-thirds ring coverage | 0.67 | — | |||
| Lattice Constant | HC lattice parameter on Pt(111) | 5.95angstrom | — | |||
| Lattice Constant | HC lattice spacing on Pd(111) | 5.8angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations4 properties2 figures
2 preparations4 characterizations3 properties2 figures
3 preparations4 characterizations7 properties2 figures
3 preparations4 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Work Function | pristine HC on Pt(111) | 6.05eV | — | |||
| Work Function | extrapolated pristine HC work function | 6.1eV | — | |||
| Work Function | Ba-decorated transformed OQC | 3.95eV | — | |||
| Work Function | Eu-decorated TiOx HC | 5.1eV | — | |||
| Dipole Moment | per Eu ion | 2.36Debye | — | |||
| Work Function Slope | slope of Φ(ΘRing) | -2.91eV | — | |||
| Coverage Fraction | ring coverage for full quasicrystal conversion | 0.73 | — | |||
| Coverage Fraction | one-third ring coverage | 0.33 | — | |||
| Coverage Fraction | labyrinth phase coverage | 0.5 | — | |||
| Coverage Fraction | two-thirds ring coverage | 0.67 | — | |||
| Lattice Constant | HC lattice parameter on Pt(111) | 5.95angstrom | — | |||
| Lattice Constant | HC lattice spacing on Pd(111) | 5.8angstrom | — |
Related documents with shared materials, methods, properties, or citations.
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Remote epitaxial frustration
Epitaxial graphene integrated with a monolayer magnet
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bottom-up realization of a type-II organic–TMD heterointerface: Pentacene on monolayer WS2
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Structural and Magnetic Properties of Co-rich bct Co1−xMnx Films
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2