Research paper
Experimental GrowthExperimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Coverage | bismuthene coverage | 2/3 monolayer | — | |||
| Lattice Periodicity | bismuthene superstructure relative to SiC | (√3 × √3)R30° | — | |||
| Moiré Period | Moiré unit cell constant | 3.225nm | — | |||
| Hole Carrier Concentration | hole doping | 9.2cm⁻² | — | |||
| Electron Carrier Concentration | electron doping | 4.4cm⁻² | — | |||
| Dirac Point Shift | graphene Dirac crossing shift | -300meV | — |
Remote epitaxial frustration
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Coverage | bismuthene coverage | 2/3 monolayer | — | |||
| Lattice Periodicity | bismuthene superstructure relative to SiC | (√3 × √3)R30° | — | |||
| Moiré Period | Moiré unit cell constant | 3.225nm | — | |||
| Hole Carrier Concentration | hole doping | 9.2cm⁻² | — | |||
| Electron Carrier Concentration | electron doping | 4.4cm⁻² | — | |||
| Dirac Point Shift | graphene Dirac crossing shift | -300meV | — |
Remote epitaxial frustration
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Coverage | bismuthene coverage | 2/3 monolayer | — | |||
| Lattice Periodicity | bismuthene superstructure relative to SiC | (√3 × √3)R30° | — | |||
| Moiré Period | Moiré unit cell constant | 3.225nm | — | |||
| Hole Carrier Concentration | hole doping | 9.2cm⁻² | — | |||
| Electron Carrier Concentration | electron doping | 4.4cm⁻² | — | |||
| Dirac Point Shift | graphene Dirac crossing shift | -300meV | — |
Remote epitaxial frustration
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Coverage | bismuthene coverage | 2/3 monolayer | — | |||
| Lattice Periodicity | bismuthene superstructure relative to SiC | (√3 × √3)R30° | — | |||
| Moiré Period | Moiré unit cell constant | 3.225nm | — | |||
| Hole Carrier Concentration | hole doping | 9.2cm⁻² | — | |||
| Electron Carrier Concentration | electron doping | 4.4cm⁻² | — | |||
| Dirac Point Shift | graphene Dirac crossing shift | -300meV | — |
Remote epitaxial frustration
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