Abstract

Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe₂ based resonant tunneling structure. In this work, a n-WSe₂/HfO₂/i-MoTe₂/HfO₂/Au resonant tunneling device (RTD) with a symmetric & asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe₂ and Chemical Vapor Deposition (CVD) grown 2H-WSe₂ along with theoretical modeling by adopting non-equilibrium green’s function (NEGF) formalism. The impact of MoTe₂-quantum well widths equal, and above its excitonic Bohr radius (~0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be ~4 at 4K in the low voltage range for the very first time in MoTe₂ based RTD. Therefore, the present work may provide the route for fabrication of WSe₂/MoTe₂-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.

Abstract

Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe₂ based resonant tunneling structure. In this work, a n-WSe₂/HfO₂/i-MoTe₂/HfO₂/Au resonant tunneling device (RTD) with a symmetric & asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe₂ and Chemical Vapor Deposition (CVD) grown 2H-WSe₂ along with theoretical modeling by adopting non-equilibrium green’s function (NEGF) formalism. The impact of MoTe₂-quantum well widths equal, and above its excitonic Bohr radius (~0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be ~4 at 4K in the low voltage range for the very first time in MoTe₂ based RTD. Therefore, the present work may provide the route for fabrication of WSe₂/MoTe₂-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.

Abstract

Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe₂ based resonant tunneling structure. In this work, a n-WSe₂/HfO₂/i-MoTe₂/HfO₂/Au resonant tunneling device (RTD) with a symmetric & asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe₂ and Chemical Vapor Deposition (CVD) grown 2H-WSe₂ along with theoretical modeling by adopting non-equilibrium green’s function (NEGF) formalism. The impact of MoTe₂-quantum well widths equal, and above its excitonic Bohr radius (~0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be ~4 at 4K in the low voltage range for the very first time in MoTe₂ based RTD. Therefore, the present work may provide the route for fabrication of WSe₂/MoTe₂-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.

Abstract

Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe₂ based resonant tunneling structure. In this work, a n-WSe₂/HfO₂/i-MoTe₂/HfO₂/Au resonant tunneling device (RTD) with a symmetric & asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe₂ and Chemical Vapor Deposition (CVD) grown 2H-WSe₂ along with theoretical modeling by adopting non-equilibrium green’s function (NEGF) formalism. The impact of MoTe₂-quantum well widths equal, and above its excitonic Bohr radius (~0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be ~4 at 4K in the low voltage range for the very first time in MoTe₂ based RTD. Therefore, the present work may provide the route for fabrication of WSe₂/MoTe₂-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.