Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers

Sourav Paul; Prasenjit Ghosh; Krishna Prasad Maity; Vineet Pandey; Abhijith M.B.; Premananda Chatterjee; Kenji Watanabe; Takashi Taniguchi; Nicholas R. Glavin; Ajit K. Roy; Atindra Nath Pal; Vidya Kochat

doi:10.48550/arXiv.2606.00665

Paper details

Research paper

Experimental GrowthExperimental Characterization

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Sourav Paul, Prasenjit Ghosh, Krishna Prasad Maity, Vineet Pandey et al.

arXiv·2026·arXiv:2606.00665

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

1 preparation3 characterizations2 figures

ExperimentalWSe₂Studied Material

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

2 preparations2 characterizations2 properties4 figures

ExperimentalCStudied MaterialBNSubstrate / DielectricWSe₂Studied Material

Materials

WSe₂

Studied Material

Also known as

3R-WSe₂bilayer WSe₂

Variables

stacking= 3R

layer_count= 2

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2Δnp	403000000000cm⁻²	C	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—
Other	P₂D	2.61e-12C/m	WSe₂	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2Δnp	403000000000cm⁻²	C	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—
Other	P₂D	2.61e-12C/m	WSe₂	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2Δnp	403000000000cm⁻²	C	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—
Other	P₂D	2.61e-12C/m	WSe₂	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2Δnp	403000000000cm⁻²	C	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—
Other	P₂D	2.61e-12C/m	WSe₂	Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated		—

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ Bilayers

Samples

CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.

Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.

Materials

Why these are connected

Growth

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Growth

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Growth

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Growth

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