Research paperExperimental GrowthExperimental CharacterizationImpact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ BilayersSourav Paul, Prasenjit Ghosh, Krishna Prasad Maity, Vineet Pandey et al.arXiv·2026·arXiv:2606.00665AbstractWe investigate sliding ferroelectricity in CVD-grown 3R-stacked bilayer WSe₂ using graphene-based ferroelectric field-effect transistors. The study emphasizes the effects of growth-induced disorder, structural defects, and multi-domain kinetics on ferroelectric switching, as probed through transport in graphene, optical microscopy, Raman spectroscopy, and PFM.Read more
CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.1 preparation3 characterizations2 figuresExperimentalWSe₂Studied MaterialExpand
Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.2 preparations2 characterizations2 properties4 figuresExperimentalCStudied MaterialBNSubstrate / DielectricWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationImpact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ BilayersSourav Paul, Prasenjit Ghosh, Krishna Prasad Maity, Vineet Pandey et al.arXiv·2026·arXiv:2606.00665AbstractWe investigate sliding ferroelectricity in CVD-grown 3R-stacked bilayer WSe₂ using graphene-based ferroelectric field-effect transistors. The study emphasizes the effects of growth-induced disorder, structural defects, and multi-domain kinetics on ferroelectric switching, as probed through transport in graphene, optical microscopy, Raman spectroscopy, and PFM.Read more
CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.1 preparation3 characterizations2 figuresExperimentalWSe₂Studied MaterialExpand
Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.2 preparations2 characterizations2 properties4 figuresExperimentalCStudied MaterialBNSubstrate / DielectricWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationImpact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ BilayersSourav Paul, Prasenjit Ghosh, Krishna Prasad Maity, Vineet Pandey et al.arXiv·2026·arXiv:2606.00665AbstractWe investigate sliding ferroelectricity in CVD-grown 3R-stacked bilayer WSe₂ using graphene-based ferroelectric field-effect transistors. The study emphasizes the effects of growth-induced disorder, structural defects, and multi-domain kinetics on ferroelectric switching, as probed through transport in graphene, optical microscopy, Raman spectroscopy, and PFM.Read more
CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.1 preparation3 characterizations2 figuresExperimentalWSe₂Studied MaterialExpand
Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.2 preparations2 characterizations2 properties4 figuresExperimentalCStudied MaterialBNSubstrate / DielectricWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationImpact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe₂ BilayersSourav Paul, Prasenjit Ghosh, Krishna Prasad Maity, Vineet Pandey et al.arXiv·2026·arXiv:2606.00665AbstractWe investigate sliding ferroelectricity in CVD-grown 3R-stacked bilayer WSe₂ using graphene-based ferroelectric field-effect transistors. The study emphasizes the effects of growth-induced disorder, structural defects, and multi-domain kinetics on ferroelectric switching, as probed through transport in graphene, optical microscopy, Raman spectroscopy, and PFM.Read more
CVD-grown 3R-stacked bilayer WSe₂ film on c-plane sapphire used for optical contrast, Raman spectroscopy, and PFM identification.1 preparation3 characterizations2 figuresExperimentalWSe₂Studied MaterialExpand
Graphene/hBN/3R-WSe₂ heterostructure device (D₁) fabricated in Hall bar geometry for ferroelectric transport measurements.2 preparations2 characterizations2 properties4 figuresExperimentalCStudied MaterialBNSubstrate / DielectricWSe₂Studied MaterialExpand