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Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition | Matter42 Literature

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Raman

Distinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor Deposition

Aymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.

2024·10.48550/arxiv.2409.08617·arXiv:2409.08617

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB (3R) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB' stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in A'B stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

Materials

WSe₂

WSe₂

Studied Material

Variables

dimensionality= bilayer

studied material

tungsten oxide

WOx

Precursor

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

paper2026
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
precursor Seprecursor H2precursor Arproperty Raman peak
paper2024
Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Raman

Distinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor Deposition

Aymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.

2024·10.48550/arxiv.2409.08617·arXiv:2409.08617

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB (3R) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB' stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in A'B stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

Materials

WSe₂

WSe₂

Studied Material

Variables

dimensionality= bilayer

studied material

tungsten oxide

WOx

Precursor

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Raman

Distinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor Deposition

Aymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.

2024·10.48550/arxiv.2409.08617·arXiv:2409.08617

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB (3R) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB' stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in A'B stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

Materials

WSe₂

WSe₂

Studied Material

Variables

dimensionality= bilayer

studied material

tungsten oxide

WOx

Precursor

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Raman

Distinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor Deposition

Aymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.

2024·10.48550/arxiv.2409.08617·arXiv:2409.08617

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.

1 preparation4 characterizations1 property1 figure

ExperimentalWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB (3R) stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AB' stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in A'B stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

DFT-relaxed bilayer WSe₂ in AA stacking.

5 properties

Simulated Supercell DftWSe₂Studied Material

Materials

WSe₂

WSe₂

Studied Material

Variables

dimensionality= bilayer

studied material

tungsten oxide

WOx

Precursor

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Properties

Type	Label	Value	Material	Sample	Condition	Source
Relative Energy Per Unit Cell	AA' (2H)	0meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	W-W	6.38angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	Se-Se	3.04angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Band Gap	band gap	1.53eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Spin Orbit Coupling	at K	0.66 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Relative Energy Per Unit Cell	AB (3R)	0.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	W-W	6.37angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	Se-Se	3.03angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Band Gap	band gap	1.47eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Spin Orbit Coupling	at K	0.56 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Relative Energy Per Unit Cell	AB'	3.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	W-W	6.44angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	Se-Se	3.1angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Spin Orbit Coupling	at K	0.70 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Relative Energy Per Unit Cell	A'B	17.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	W-W	6.74angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	Se-Se	3.41angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Spin Orbit Coupling	at K	0.60 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Relative Energy Per Unit Cell	AA	18.6meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	W-W	6.77angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	Se-Se	3.43angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Band Gap	band gap	1.52eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Spin Orbit Coupling	at K	0.57 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Shg Intensity Ratio	bilayer to monolayer SHG intensity ratio	4	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilaye		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optica		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilaye		—
Raman Peak	regex-detected Raman peak	250cm⁻¹	WSe₂	—	—	—
Raman Peak	regex-detected Raman peak	251cm⁻¹	WSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Relative Energy Per Unit Cell	AA' (2H)	0meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	W-W	6.38angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	Se-Se	3.04angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Band Gap	band gap	1.53eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Spin Orbit Coupling	at K	0.66 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Relative Energy Per Unit Cell	AB (3R)	0.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	W-W	6.37angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	Se-Se	3.03angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Band Gap	band gap	1.47eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Spin Orbit Coupling	at K	0.56 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Relative Energy Per Unit Cell	AB'	3.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	W-W	6.44angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	Se-Se	3.1angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Spin Orbit Coupling	at K	0.70 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Relative Energy Per Unit Cell	A'B	17.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	W-W	6.74angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	Se-Se	3.41angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Spin Orbit Coupling	at K	0.60 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Relative Energy Per Unit Cell	AA	18.6meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	W-W	6.77angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	Se-Se	3.43angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Band Gap	band gap	1.52eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Spin Orbit Coupling	at K	0.57 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Shg Intensity Ratio	bilayer to monolayer SHG intensity ratio	4	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilaye		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optica		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilaye		—
Raman Peak	regex-detected Raman peak	250cm⁻¹	WSe₂	—	—	—
Raman Peak	regex-detected Raman peak	251cm⁻¹	WSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Relative Energy Per Unit Cell	AA' (2H)	0meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	W-W	6.38angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	Se-Se	3.04angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Band Gap	band gap	1.53eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Spin Orbit Coupling	at K	0.66 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Relative Energy Per Unit Cell	AB (3R)	0.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	W-W	6.37angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	Se-Se	3.03angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Band Gap	band gap	1.47eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Spin Orbit Coupling	at K	0.56 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Relative Energy Per Unit Cell	AB'	3.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	W-W	6.44angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	Se-Se	3.1angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Spin Orbit Coupling	at K	0.70 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Relative Energy Per Unit Cell	A'B	17.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	W-W	6.74angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	Se-Se	3.41angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Spin Orbit Coupling	at K	0.60 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Relative Energy Per Unit Cell	AA	18.6meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	W-W	6.77angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	Se-Se	3.43angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Band Gap	band gap	1.52eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Spin Orbit Coupling	at K	0.57 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Shg Intensity Ratio	bilayer to monolayer SHG intensity ratio	4	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilaye		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optica		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilaye		—
Raman Peak	regex-detected Raman peak	250cm⁻¹	WSe₂	—	—	—
Raman Peak	regex-detected Raman peak	251cm⁻¹	WSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Relative Energy Per Unit Cell	AA' (2H)	0meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	W-W	6.38angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Interlayer Distance	Se-Se	3.04angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Band Gap	band gap	1.53eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Spin Orbit Coupling	at K	0.66 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.		—
Relative Energy Per Unit Cell	AB (3R)	0.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	W-W	6.37angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Interlayer Distance	Se-Se	3.03angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Band Gap	band gap	1.47eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Spin Orbit Coupling	at K	0.56 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB (3R) stacking.		—
Relative Energy Per Unit Cell	AB'	3.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	W-W	6.44angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Interlayer Distance	Se-Se	3.1angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Spin Orbit Coupling	at K	0.70 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in AB' stacking.		—
Relative Energy Per Unit Cell	A'B	17.4meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	W-W	6.74angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Interlayer Distance	Se-Se	3.41angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Band Gap	band gap	1.6eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Spin Orbit Coupling	at K	0.60 -- 0.00eV	WSe₂	DFT-relaxed bilayer WSe₂ in A'B stacking.		—
Relative Energy Per Unit Cell	AA	18.6meV/u.c.	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	W-W	6.77angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Interlayer Distance	Se-Se	3.43angstrom	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Band Gap	band gap	1.52eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Spin Orbit Coupling	at K	0.57 -- 0.08eV	WSe₂	DFT-relaxed bilayer WSe₂ in AA stacking.		—
Shg Intensity Ratio	bilayer to monolayer SHG intensity ratio	4	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilaye		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optica		—
Shg Signal Presence	SHG response	vanishing in bilayer area	WSe₂	CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilaye		—
Raman Peak	regex-detected Raman peak	250cm⁻¹	WSe₂	—	—	—
Raman Peak	regex-detected Raman peak	251cm⁻¹	WSe₂	—	—	—