Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanDistinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor DepositionAymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.2024·10.48550/arxiv.2409.08617·arXiv:2409.08617AbstractThe paper compares stacking orders in homo-bilayer WSe₂ grown by chemical vapor deposition using optical microscopy, second harmonic generation, Raman spectroscopy, and DFT calculations. It shows that edge orientation alone is insufficient to distinguish AA′ (2H), AB (3R), and AB′ stacking, and that low-frequency Raman and SHG provide more reliable identification.Read more
CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB (3R) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB' stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in A'B stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanDistinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor DepositionAymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.2024·10.48550/arxiv.2409.08617·arXiv:2409.08617AbstractThe paper compares stacking orders in homo-bilayer WSe₂ grown by chemical vapor deposition using optical microscopy, second harmonic generation, Raman spectroscopy, and DFT calculations. It shows that edge orientation alone is insufficient to distinguish AA′ (2H), AB (3R), and AB′ stacking, and that low-frequency Raman and SHG provide more reliable identification.Read more
CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB (3R) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB' stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in A'B stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanDistinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor DepositionAymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.2024·10.48550/arxiv.2409.08617·arXiv:2409.08617AbstractThe paper compares stacking orders in homo-bilayer WSe₂ grown by chemical vapor deposition using optical microscopy, second harmonic generation, Raman spectroscopy, and DFT calculations. It shows that edge orientation alone is insufficient to distinguish AA′ (2H), AB (3R), and AB′ stacking, and that low-frequency Raman and SHG provide more reliable identification.Read more
CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB (3R) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB' stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in A'B stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanDistinguishing different stackings in WSe₂ bilayers grown Using Chemical Vapor DepositionAymen Mahmoudi, Meryem Bouaziz, Davide Romani, Marco Pala et al.2024·10.48550/arxiv.2409.08617·arXiv:2409.08617AbstractThe paper compares stacking orders in homo-bilayer WSe₂ grown by chemical vapor deposition using optical microscopy, second harmonic generation, Raman spectroscopy, and DFT calculations. It shows that edge orientation alone is insufficient to distinguish AA′ (2H), AB (3R), and AB′ stacking, and that low-frequency Raman and SHG provide more reliable identification.Read more
CVD-grown WSe₂ homo-bilayer sample labeled 60° in the optical images; monolayer and bilayer regions present on silica substrate.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 1; bilayer region exhibits strong SHG consistent with AB stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
CVD-grown WSe₂ homo-bilayer sample labeled 0° type 2; bilayer region shows vanishing SHG consistent with centrosymmetric stacking.1 preparation4 characterizations1 property1 figureExperimentalWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA' (2H) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB (3R) stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AB' stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in A'B stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand
DFT-relaxed bilayer WSe₂ in AA stacking.5 propertiesSimulated Supercell DftWSe₂Studied MaterialExpand