Research paper
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 properties
2 preparations6 characterizations13 properties7 figures
2 preparations7 characterizations13 properties7 figures
1 preparation1 characterization3 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Si substrate thickness | 500um | — | — | ||
| Film Thickness | W sputtered film thickness | 5-10nm | — | |||
| Film Thickness | multilayer WSe₂ thickness | 15-30nm | — | |||
| Film Uniformity | film uniformity | wafer-scale | — | |||
| Stoichiometric Ratio | elemental ratio | Se/W | — | |||
| Film Orientation | preferred orientation | (00l) | — | |||
| Film Orientation | preferred orientation | mixed vertical and (00l) | — | |||
| Grain Size | grain size | —nm | — | |||
| Xrd Microstrain | microstrain | — | — | |||
| Raman Intensity Ratio | defect-related Raman comparison | E'/A1' to 2LA(M) | — | |||
| Fet Mobility | Hall mobility | 8cm²/Vs | — | |||
| Carrier Lifetime | minority carrier lifetime | 144ns | — | |||
| Optical Band Gap | film band gap | 1.2-1.3eV | — | |||
| Optical Band Gap | optical band gap referenced for excitation comparison | 1.59eV | — | |||
| PL Peak | B exciton | 2.14eV | — | |||
| PL Peak | bulk exciton | 2.48eV | — | |||
| Power Conversion Efficiency | optimized solar cell efficiency | 22.3% | — | |||
| Specific Power | packaged solar cell specific power | 64W g^-1 | — | |||
| Specific Power | fully packaged solar module specific power | 3W g^-1 | — |
Related documents with shared materials, methods, properties, or citations.
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Origin of interlayer exciton-phonon coupling in 2D heterostructures
Room temperature multiferroicity in a transition metal dichalcogenide
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Impact of Pauli-blocking effect on optical limiting properties of WSe2 thin films
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Real-Space Imaging of Guided Exciton Polaritons in Free-standing Monolayer WSe2
Electronic structure of the interface between Au and WSe2
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 properties
2 preparations6 characterizations13 properties7 figures
2 preparations7 characterizations13 properties7 figures
1 preparation1 characterization3 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Si substrate thickness | 500um | — | — | ||
| Film Thickness | W sputtered film thickness | 5-10nm | — | |||
| Film Thickness | multilayer WSe₂ thickness | 15-30nm | — | |||
| Film Uniformity | film uniformity | wafer-scale | — | |||
| Stoichiometric Ratio | elemental ratio | Se/W | — | |||
| Film Orientation | preferred orientation | (00l) | — | |||
| Film Orientation | preferred orientation | mixed vertical and (00l) | — | |||
| Grain Size | grain size | —nm | — | |||
| Xrd Microstrain | microstrain | — | — | |||
| Raman Intensity Ratio | defect-related Raman comparison | E'/A1' to 2LA(M) | — | |||
| Fet Mobility | Hall mobility | 8cm²/Vs | — | |||
| Carrier Lifetime | minority carrier lifetime | 144ns | — | |||
| Optical Band Gap | film band gap | 1.2-1.3eV | — | |||
| Optical Band Gap | optical band gap referenced for excitation comparison | 1.59eV | — | |||
| PL Peak | B exciton | 2.14eV | — | |||
| PL Peak | bulk exciton | 2.48eV | — | |||
| Power Conversion Efficiency | optimized solar cell efficiency | 22.3% | — | |||
| Specific Power | packaged solar cell specific power | 64W g^-1 | — | |||
| Specific Power | fully packaged solar module specific power | 3W g^-1 | — |
Related documents with shared materials, methods, properties, or citations.
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Origin of interlayer exciton-phonon coupling in 2D heterostructures
Room temperature multiferroicity in a transition metal dichalcogenide
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Impact of Pauli-blocking effect on optical limiting properties of WSe2 thin films
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Real-Space Imaging of Guided Exciton Polaritons in Free-standing Monolayer WSe2
Electronic structure of the interface between Au and WSe2
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 properties
2 preparations6 characterizations13 properties7 figures
2 preparations7 characterizations13 properties7 figures
1 preparation1 characterization3 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Si substrate thickness | 500um | — | — | ||
| Film Thickness | W sputtered film thickness | 5-10nm | — | |||
| Film Thickness | multilayer WSe₂ thickness | 15-30nm | — | |||
| Film Uniformity | film uniformity | wafer-scale | — | |||
| Stoichiometric Ratio | elemental ratio | Se/W | — | |||
| Film Orientation | preferred orientation | (00l) | — | |||
| Film Orientation | preferred orientation | mixed vertical and (00l) | — | |||
| Grain Size | grain size | —nm | — | |||
| Xrd Microstrain | microstrain | — | — | |||
| Raman Intensity Ratio | defect-related Raman comparison | E'/A1' to 2LA(M) | — | |||
| Fet Mobility | Hall mobility | 8cm²/Vs | — | |||
| Carrier Lifetime | minority carrier lifetime | 144ns | — | |||
| Optical Band Gap | film band gap | 1.2-1.3eV | — | |||
| Optical Band Gap | optical band gap referenced for excitation comparison | 1.59eV | — | |||
| PL Peak | B exciton | 2.14eV | — | |||
| PL Peak | bulk exciton | 2.48eV | — | |||
| Power Conversion Efficiency | optimized solar cell efficiency | 22.3% | — | |||
| Specific Power | packaged solar cell specific power | 64W g^-1 | — | |||
| Specific Power | fully packaged solar module specific power | 3W g^-1 | — |
Related documents with shared materials, methods, properties, or citations.
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Origin of interlayer exciton-phonon coupling in 2D heterostructures
Room temperature multiferroicity in a transition metal dichalcogenide
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Impact of Pauli-blocking effect on optical limiting properties of WSe2 thin films
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Real-Space Imaging of Guided Exciton Polaritons in Free-standing Monolayer WSe2
Electronic structure of the interface between Au and WSe2
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 properties
2 preparations6 characterizations13 properties7 figures
2 preparations7 characterizations13 properties7 figures
1 preparation1 characterization3 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Si substrate thickness | 500um | — | — | ||
| Film Thickness | W sputtered film thickness | 5-10nm | — | |||
| Film Thickness | multilayer WSe₂ thickness | 15-30nm | — | |||
| Film Uniformity | film uniformity | wafer-scale | — | |||
| Stoichiometric Ratio | elemental ratio | Se/W | — | |||
| Film Orientation | preferred orientation | (00l) | — | |||
| Film Orientation | preferred orientation | mixed vertical and (00l) | — | |||
| Grain Size | grain size | —nm | — | |||
| Xrd Microstrain | microstrain | — | — | |||
| Raman Intensity Ratio | defect-related Raman comparison | E'/A1' to 2LA(M) | — | |||
| Fet Mobility | Hall mobility | 8cm²/Vs | — | |||
| Carrier Lifetime | minority carrier lifetime | 144ns | — | |||
| Optical Band Gap | film band gap | 1.2-1.3eV | — | |||
| Optical Band Gap | optical band gap referenced for excitation comparison | 1.59eV | — | |||
| PL Peak | B exciton | 2.14eV | — | |||
| PL Peak | bulk exciton | 2.48eV | — | |||
| Power Conversion Efficiency | optimized solar cell efficiency | 22.3% | — | |||
| Specific Power | packaged solar cell specific power | 64W g^-1 | — | |||
| Specific Power | fully packaged solar module specific power | 3W g^-1 | — |
Related documents with shared materials, methods, properties, or citations.
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Origin of interlayer exciton-phonon coupling in 2D heterostructures
Room temperature multiferroicity in a transition metal dichalcogenide
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Impact of Pauli-blocking effect on optical limiting properties of WSe2 thin films
Gate-tunable spin-valley transport via carrier velocity in monolayer WSe2
Confinement in a magnetically induced WSe2 quantum dots
Real-Space Imaging of Guided Exciton Polaritons in Free-standing Monolayer WSe2
Electronic structure of the interface between Au and WSe2
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures