Research paperExperimental GrowthExperimental CharacterizationGrowth of Large Area WSe₂ and Observation of Photogenerated Inversion Layer in DMOS ConfigurationKajal Sharma, Abir Mukherjee, Kritika Bhattacharya, Biswarup Satpati et al.2024·10.1021/acsaelm.4c02214·arXiv:2410.19127AbstractWe report synthesis and characterization of few-layered/thin WSe₂ grown by selenization of sputtered W films on SiO₂/Si substrates, followed by reactive-ion etching and electrical studies under dark and illumination conditions. Growth temperature and gas flow were optimized for thermodynamically stable WSe₂ with a dominant Raman peak at 265 cm⁻¹. XRD, HR-TEM, Raman, PL, XPS, EPMA, and optical microscopy were used to confirm growth quality. The material was then implemented in a DMOS structure on SiO₂/p-Si, showing strong photoinduced electron inversion even at high frequencies.Read more
WSe₂ film grown at 400 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 450 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 470 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Optimized WSe₂ film grown at 500 C on sputtered W film over SiO₂/p-Si.3 preparations6 characterizations8 properties2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
DMOS device fabricated using the optimized WSe₂ active film on SiO₂/p-Si.2 preparations1 characterizationExperimentalWSe₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationGrowth of Large Area WSe₂ and Observation of Photogenerated Inversion Layer in DMOS ConfigurationKajal Sharma, Abir Mukherjee, Kritika Bhattacharya, Biswarup Satpati et al.2024·10.1021/acsaelm.4c02214·arXiv:2410.19127AbstractWe report synthesis and characterization of few-layered/thin WSe₂ grown by selenization of sputtered W films on SiO₂/Si substrates, followed by reactive-ion etching and electrical studies under dark and illumination conditions. Growth temperature and gas flow were optimized for thermodynamically stable WSe₂ with a dominant Raman peak at 265 cm⁻¹. XRD, HR-TEM, Raman, PL, XPS, EPMA, and optical microscopy were used to confirm growth quality. The material was then implemented in a DMOS structure on SiO₂/p-Si, showing strong photoinduced electron inversion even at high frequencies.Read more
WSe₂ film grown at 400 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 450 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 470 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Optimized WSe₂ film grown at 500 C on sputtered W film over SiO₂/p-Si.3 preparations6 characterizations8 properties2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
DMOS device fabricated using the optimized WSe₂ active film on SiO₂/p-Si.2 preparations1 characterizationExperimentalWSe₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationGrowth of Large Area WSe₂ and Observation of Photogenerated Inversion Layer in DMOS ConfigurationKajal Sharma, Abir Mukherjee, Kritika Bhattacharya, Biswarup Satpati et al.2024·10.1021/acsaelm.4c02214·arXiv:2410.19127AbstractWe report synthesis and characterization of few-layered/thin WSe₂ grown by selenization of sputtered W films on SiO₂/Si substrates, followed by reactive-ion etching and electrical studies under dark and illumination conditions. Growth temperature and gas flow were optimized for thermodynamically stable WSe₂ with a dominant Raman peak at 265 cm⁻¹. XRD, HR-TEM, Raman, PL, XPS, EPMA, and optical microscopy were used to confirm growth quality. The material was then implemented in a DMOS structure on SiO₂/p-Si, showing strong photoinduced electron inversion even at high frequencies.Read more
WSe₂ film grown at 400 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 450 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 470 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Optimized WSe₂ film grown at 500 C on sputtered W film over SiO₂/p-Si.3 preparations6 characterizations8 properties2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
DMOS device fabricated using the optimized WSe₂ active film on SiO₂/p-Si.2 preparations1 characterizationExperimentalWSe₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationGrowth of Large Area WSe₂ and Observation of Photogenerated Inversion Layer in DMOS ConfigurationKajal Sharma, Abir Mukherjee, Kritika Bhattacharya, Biswarup Satpati et al.2024·10.1021/acsaelm.4c02214·arXiv:2410.19127AbstractWe report synthesis and characterization of few-layered/thin WSe₂ grown by selenization of sputtered W films on SiO₂/Si substrates, followed by reactive-ion etching and electrical studies under dark and illumination conditions. Growth temperature and gas flow were optimized for thermodynamically stable WSe₂ with a dominant Raman peak at 265 cm⁻¹. XRD, HR-TEM, Raman, PL, XPS, EPMA, and optical microscopy were used to confirm growth quality. The material was then implemented in a DMOS structure on SiO₂/p-Si, showing strong photoinduced electron inversion even at high frequencies.Read more
WSe₂ film grown at 400 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 450 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
WSe₂ film grown at 470 C on sputtered W film over SiO₂/p-Si.2 preparations3 characterizations1 property2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Optimized WSe₂ film grown at 500 C on sputtered W film over SiO₂/p-Si.3 preparations6 characterizations8 properties2 figuresExperimentalWSe₂Studied MaterialWPrecursorSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
DMOS device fabricated using the optimized WSe₂ active film on SiO₂/p-Si.2 preparations1 characterizationExperimentalWSe₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand