Patent
US 11,619,847OF THE I NVENTION
Rajratan Basu
The Government of the United States of America·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,619,847Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electro-optical liquid crystal cell, comprising: a first substrate; a first layer of indium tin oxide (ITO) on the first substrate; a first layer of two-dimensional 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; and a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate. a second la y er of two-dimensional WSe₂ on the la y er of liquid cr y stal; a second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal; and a second substrate on the second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ and the second layer of WSe₂ are aligned in the same direction to promote uniaxial liquid crystal alignment in the cell. Currently amended
Canceled
Applicant: The Government of the United States of America Inventor: Basu Canceled
A method of making an electro-optical liquid crystal cell, comprising: providing a first substrate; providing a first layer of indium tin oxide (ITO) on the first substrate; providing a first layer of 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; providing a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate, providing a second la y er of WSe₂ on the la y er of liquid crystal; providing a second layer of ITO on the second layer of WSe₂ on the la y er of liquid crystal; and providing a second substrate on the second layer of ITO on the second layer of WSe₂ on the layer of liquid crystal. Currently amended
The method of making an electro-optical liquid crystal cell of claim 9 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials
Describes the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. Explains that in the WSe₂ lattice each Se atom is bonded to three W atoms in a pyramidal geometry, leading to spontaneous planar-alignment of LC molecules along the armchair direction via epitaxial interaction.
2 materials1 process step
Fabrication of the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. High-quality CVD-grown monolayer WSe₂ film on c-cut sapphire (from 2Dsemiconductors Inc.) was transferred onto ITO-coated glass substrates.
Layer stacks claimed or described, ordered top of device to substrate.
electro-optical liquid crystal cell
Materials described outside the worked examples.
liquid crystal E₇
c-cut sapphire substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
WSe2 monolayer thickness | 0.7 nm | WSe₂ |
LC molecule adsorption energy on WSe2 armchair direction (DFT) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,619,847Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electro-optical liquid crystal cell, comprising: a first substrate; a first layer of indium tin oxide (ITO) on the first substrate; a first layer of two-dimensional 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; and a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate. a second la y er of two-dimensional WSe₂ on the la y er of liquid cr y stal; a second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal; and a second substrate on the second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ and the second layer of WSe₂ are aligned in the same direction to promote uniaxial liquid crystal alignment in the cell. Currently amended
Canceled
Applicant: The Government of the United States of America Inventor: Basu Canceled
A method of making an electro-optical liquid crystal cell, comprising: providing a first substrate; providing a first layer of indium tin oxide (ITO) on the first substrate; providing a first layer of 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; providing a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate, providing a second la y er of WSe₂ on the la y er of liquid crystal; providing a second layer of ITO on the second layer of WSe₂ on the la y er of liquid crystal; and providing a second substrate on the second layer of ITO on the second layer of WSe₂ on the layer of liquid crystal. Currently amended
The method of making an electro-optical liquid crystal cell of claim 9 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials
Describes the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. Explains that in the WSe₂ lattice each Se atom is bonded to three W atoms in a pyramidal geometry, leading to spontaneous planar-alignment of LC molecules along the armchair direction via epitaxial interaction.
2 materials1 process step
Fabrication of the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. High-quality CVD-grown monolayer WSe₂ film on c-cut sapphire (from 2Dsemiconductors Inc.) was transferred onto ITO-coated glass substrates.
Layer stacks claimed or described, ordered top of device to substrate.
electro-optical liquid crystal cell
Materials described outside the worked examples.
liquid crystal E₇
c-cut sapphire substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
WSe2 monolayer thickness | 0.7 nm | WSe₂ |
LC molecule adsorption energy on WSe2 armchair direction (DFT) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,619,847Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electro-optical liquid crystal cell, comprising: a first substrate; a first layer of indium tin oxide (ITO) on the first substrate; a first layer of two-dimensional 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; and a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate. a second la y er of two-dimensional WSe₂ on the la y er of liquid cr y stal; a second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal; and a second substrate on the second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ and the second layer of WSe₂ are aligned in the same direction to promote uniaxial liquid crystal alignment in the cell. Currently amended
Canceled
Applicant: The Government of the United States of America Inventor: Basu Canceled
A method of making an electro-optical liquid crystal cell, comprising: providing a first substrate; providing a first layer of indium tin oxide (ITO) on the first substrate; providing a first layer of 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; providing a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate, providing a second la y er of WSe₂ on the la y er of liquid crystal; providing a second layer of ITO on the second layer of WSe₂ on the la y er of liquid crystal; and providing a second substrate on the second layer of ITO on the second layer of WSe₂ on the layer of liquid crystal. Currently amended
The method of making an electro-optical liquid crystal cell of claim 9 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials
Describes the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. Explains that in the WSe₂ lattice each Se atom is bonded to three W atoms in a pyramidal geometry, leading to spontaneous planar-alignment of LC molecules along the armchair direction via epitaxial interaction.
2 materials1 process step
Fabrication of the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. High-quality CVD-grown monolayer WSe₂ film on c-cut sapphire (from 2Dsemiconductors Inc.) was transferred onto ITO-coated glass substrates.
Layer stacks claimed or described, ordered top of device to substrate.
electro-optical liquid crystal cell
Materials described outside the worked examples.
liquid crystal E₇
c-cut sapphire substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
WSe2 monolayer thickness | 0.7 nm | WSe₂ |
LC molecule adsorption energy on WSe2 armchair direction (DFT) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,619,847Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electro-optical liquid crystal cell, comprising: a first substrate; a first layer of indium tin oxide (ITO) on the first substrate; a first layer of two-dimensional 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; and a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate. a second la y er of two-dimensional WSe₂ on the la y er of liquid cr y stal; a second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal; and a second substrate on the second la y er of ITO on the second la y er of WSe₂ on the la y er of liquid cr y stal. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
The electro-optical liquid crystal cell of claim 1 wherein the first layer of WSe₂ and the second layer of WSe₂ are aligned in the same direction to promote uniaxial liquid crystal alignment in the cell. Currently amended
Canceled
Applicant: The Government of the United States of America Inventor: Basu Canceled
A method of making an electro-optical liquid crystal cell, comprising: providing a first substrate; providing a first layer of indium tin oxide (ITO) on the first substrate; providing a first layer of 2 tungsten diselenide (WSe₂) on the first layer of ITO on the first substrate; providing a layer of liquid crystal on the first layer of WSe₂ on the first layer of ITO on the first substrate, providing a second la y er of WSe₂ on the la y er of liquid crystal; providing a second layer of ITO on the second layer of WSe₂ on the la y er of liquid crystal; and providing a second substrate on the second layer of ITO on the second layer of WSe₂ on the layer of liquid crystal. Currently amended
The method of making an electro-optical liquid crystal cell of claim 9 wherein the first layer of WSe₂ has a thickness of about 0.7 nm and wherein the second layer of WSe₂ has a thickness of about 0.7 nm. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials
Describes the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. Explains that in the WSe₂ lattice each Se atom is bonded to three W atoms in a pyramidal geometry, leading to spontaneous planar-alignment of LC molecules along the armchair direction via epitaxial interaction.
2 materials1 process step
Fabrication of the electro-optic LC cell employing monolayer 2D WSe₂ as the planar-alignment agent. High-quality CVD-grown monolayer WSe₂ film on c-cut sapphire (from 2Dsemiconductors Inc.) was transferred onto ITO-coated glass substrates.
Layer stacks claimed or described, ordered top of device to substrate.
electro-optical liquid crystal cell
Materials described outside the worked examples.
liquid crystal E₇
c-cut sapphire substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
WSe2 monolayer thickness | 0.7 nm | WSe₂ |
LC molecule adsorption energy on WSe2 armchair direction (DFT) |
Related documents with shared materials, methods, properties, or citations.
| 1.708 eV/molecule |
WSe₂ |
Thickness | 300–1000 nm | — |
Thickness | 0.7–60 nm | — |
| 1.708 eV/molecule |
WSe₂ |
Thickness | 300–1000 nm | — |
Thickness | 0.7–60 nm | — |
| 1.708 eV/molecule |
WSe₂ |
Thickness | 300–1000 nm | — |
Thickness | 0.7–60 nm | — |
| 1.708 eV/molecule |
WSe₂ |
Thickness | 300–1000 nm | — |
Thickness | 0.7–60 nm | — |