Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe2 Bilayers on Cubic W(110)

Niels Chapuis; Meryem Bouaziz; Eva Desgué; Iann Gerber; François Bertarn; Pierre Legagneux; Fabrice Oehler; Julien Chaste; Abdelkarim Ouerghi

doi:10.48550/arxiv.2603.05199

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed RamanComputed Phonon

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Niels Chapuis, Meryem Bouaziz, Eva Desgué, Iann Gerber et al.

2025

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

1 preparation1 characterization2 figures

ExperimentalWSubstrate / Dielectric

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

1 preparation1 characterization2 figures

ExperimentalWSubstrate / DielectricSePrecursor

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

1 preparation5 characterizations15 properties7 figures

ExperimentalWSe₂Studied MaterialWSubstrate / DielectricSePrecursor

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

No measurements recorded

Simulated Supercell DftWSe₂Studied Material

Materials

WSe₂

Studied Material

Also known as

tungsten diselenide3R-WSe₂

Variables

polytype= 3R

dimensionality= bilayer

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe2 Bilayers on Cubic W(110) | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Surface Angular Spread	in-plane domain spread	6deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Angular Spread	surface angular spread	3deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Lattice Periodicity	in-plane lattice periodicity	3.4angstrom	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Roughness Rms	RMS roughness	0.8nm	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Spin Orbit Splitting	K-point splitting	520meV	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	upper valence band at K	0.46m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	lower valence band at K	0.75m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.7eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	31.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.3eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d5/2	54.9eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d3/2	55.8eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Angular Spread	in-plane domain spread	6deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Angular Spread	surface angular spread	3deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Lattice Periodicity	in-plane lattice periodicity	3.4angstrom	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Roughness Rms	RMS roughness	0.8nm	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Spin Orbit Splitting	K-point splitting	520meV	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	upper valence band at K	0.46m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	lower valence band at K	0.75m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.7eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	31.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.3eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d5/2	54.9eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d3/2	55.8eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Angular Spread	in-plane domain spread	6deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Angular Spread	surface angular spread	3deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Lattice Periodicity	in-plane lattice periodicity	3.4angstrom	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Roughness Rms	RMS roughness	0.8nm	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Spin Orbit Splitting	K-point splitting	520meV	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	upper valence band at K	0.46m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	lower valence band at K	0.75m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.7eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	31.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.3eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d5/2	54.9eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d3/2	55.8eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Angular Spread	in-plane domain spread	6deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Angular Spread	surface angular spread	3deg	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Lattice Periodicity	in-plane lattice periodicity	3.4angstrom	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Surface Roughness Rms	RMS roughness	0.8nm	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Spin Orbit Splitting	K-point splitting	520meV	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	upper valence band at K	0.46m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Hole Effective Mass	lower valence band at K	0.75m_e	WSe₂	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.7eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	31.9eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f7/2	32.1eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	W 4f5/2	34.3eV	WSe₂ W Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d5/2	54.9eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—
Xps Binding Energy	Se 3d3/2	55.8eV	Se	Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-	—

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe₂ Bilayers on Cubic W(110)

Samples

Commercial cubic W(110) substrate after UHV outgassing and before selenization.

Se-terminated W(110) surface used for quasi–van der Waals epitaxy.

Epitaxially grown quasi-free-standing bilayer 3R-WSe₂ on Se-terminated W(110).

Freestanding bilayer 3R-WSe₂ supercell used for DFT and band-structure calculations.

Materials

Why these are connected

Growth

Processing

Characterization

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Simulations

Growth

Processing

Characterization

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Simulations

Growth

Processing

Characterization

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Simulations

Growth