Giant Hole-doping in 2H-WSe2 via Ta Substitution

Minhee Kang; Woojin Choi; Choongyu Hwang; Jinwoong Hwang

doi:10.5757/ASCT.2025.34.6.194

Paper details

Research paper

Experimental GrowthExperimental Characterization

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Minhee Kang, Woojin Choi, Choongyu Hwang, Jinwoong Hwang

2026·10.5757/ASCT.2025.34.6.194·arXiv:2601.08284

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

3 preparations2 characterizations2 properties3 figures

ExperimentalWSe₂Studied Material

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

2 preparations2 characterizations3 properties3 figures

ExperimentalWSe₂Studied MaterialW(1-x)TaxSe₂Studied Material

Materials

2H-WSe₂

WSe₂

Studied Material

Also known as

WSe₂stoichiometric 2H-WSe₂

Variables

polytype= 2H

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Giant Hole-doping in 2H-WSe2 via Ta Substitution | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	in-plane lattice constant	3.29angstrom	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Lattice Constant	in-plane lattice constant	3.4angstrom	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Band Shift	valence bands shift toward EF	760meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	in-plane lattice constant	3.29angstrom	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Lattice Constant	in-plane lattice constant	3.4angstrom	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Band Shift	valence bands shift toward EF	760meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	in-plane lattice constant	3.29angstrom	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Lattice Constant	in-plane lattice constant	3.4angstrom	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Band Shift	valence bands shift toward EF	760meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	in-plane lattice constant	3.29angstrom	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Lattice Constant	in-plane lattice constant	3.4angstrom	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	WSe₂	MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(	—
Band Shift	valence bands shift toward EF	760meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—
Band Splitting	spin splitting at K point	480meV	W(1-x)TaxSe₂	Ta-substituted WSe₂ film grown by co-evaporation of Ta and S	—

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Giant Hole-doping in 2H-WSe₂ via Ta Substitution

Samples

MBE-grown 2H-WSe₂ film on epitaxial bilayer graphene/6H-SiC(0001); grown as a few-layer film and used as the stoichiometric reference.

Ta-substituted WSe₂ film grown by co-evaporation of Ta and Se on MBE-grown 2H-WSe₂ over bilayer graphene/6H-SiC(0001); interpreted as a Ta-substituted film with partial 1H-TaSe₂-like metallic contribution.

Materials

Why these are connected

Growth

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Growth

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Growth

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Growth

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