Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanUnusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Koki Yanagizawa et al.2024·10.1103/PhysRevMaterials.9.L011001·arXiv:2501.17528AbstractWe investigated the band structure of an epitaxial monolayer 1T′-WTe₂ film grown on graphene/SiC(0001) over a wide temperature range by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level slightly away from the Γ point and four hole bands below EF at Γ, indicating an indirect band gap exceeding 0.1 eV and supporting the 2D topological insulator phase. The band gap persists up to 400 K, but the band positions shift strongly with temperature. Comparison with first-principles calculations suggests that local atomic distortion of W atoms is responsible for the unusual temperature evolution of the band structure.Read more
Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.2 preparations2 characterizations2 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanUnusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Koki Yanagizawa et al.2024·10.1103/PhysRevMaterials.9.L011001·arXiv:2501.17528AbstractWe investigated the band structure of an epitaxial monolayer 1T′-WTe₂ film grown on graphene/SiC(0001) over a wide temperature range by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level slightly away from the Γ point and four hole bands below EF at Γ, indicating an indirect band gap exceeding 0.1 eV and supporting the 2D topological insulator phase. The band gap persists up to 400 K, but the band positions shift strongly with temperature. Comparison with first-principles calculations suggests that local atomic distortion of W atoms is responsible for the unusual temperature evolution of the band structure.Read more
Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.2 preparations2 characterizations2 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanUnusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Koki Yanagizawa et al.2024·10.1103/PhysRevMaterials.9.L011001·arXiv:2501.17528AbstractWe investigated the band structure of an epitaxial monolayer 1T′-WTe₂ film grown on graphene/SiC(0001) over a wide temperature range by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level slightly away from the Γ point and four hole bands below EF at Γ, indicating an indirect band gap exceeding 0.1 eV and supporting the 2D topological insulator phase. The band gap persists up to 400 K, but the band positions shift strongly with temperature. Comparison with first-principles calculations suggests that local atomic distortion of W atoms is responsible for the unusual temperature evolution of the band structure.Read more
Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.2 preparations2 characterizations2 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed RamanUnusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Koki Yanagizawa et al.2024·10.1103/PhysRevMaterials.9.L011001·arXiv:2501.17528AbstractWe investigated the band structure of an epitaxial monolayer 1T′-WTe₂ film grown on graphene/SiC(0001) over a wide temperature range by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level slightly away from the Γ point and four hole bands below EF at Γ, indicating an indirect band gap exceeding 0.1 eV and supporting the 2D topological insulator phase. The band gap persists up to 400 K, but the band positions shift strongly with temperature. Comparison with first-principles calculations suggests that local atomic distortion of W atoms is responsible for the unusual temperature evolution of the band structure.Read more
Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.2 preparations2 characterizations2 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand