Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe2

Ryuichi Ando; Katsuaki Sugawara; Tappei Kawakami; Koki Yanagizawa; Ken Yaegashi; Takashi Takahashi; Takafumi Sato

doi:10.1103/PhysRevMaterials.9.L011001

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Raman

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Koki Yanagizawa et al.

2024·10.1103/PhysRevMaterials.9.L011001·arXiv:2501.17528

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

2 preparations2 characterizations2 properties2 figures

ExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Materials

WTe₂

Studied Material

Also known as

monolayer 1T′-WTe₂1T′-WTe₂

Variables

phase= 1T′

dimensionality= monolayer

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	indirect band gap	>0.1eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Band Gap	spectroscopic band gap	0.15eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Xrd Lattice Constant A	lattice constant a	6.28Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	indirect band gap	>0.1eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Band Gap	spectroscopic band gap	0.15eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Xrd Lattice Constant A	lattice constant a	6.28Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	indirect band gap	>0.1eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Band Gap	spectroscopic band gap	0.15eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Xrd Lattice Constant A	lattice constant a	6.28Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	indirect band gap	>0.1eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Band Gap	spectroscopic band gap	0.15eV	WTe₂	Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/		—
Xrd Lattice Constant A	lattice constant a	6.28Å	—	—	—	—

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe₂

Samples

Epitaxial monolayer 1T′-WTe₂ film grown on bilayer graphene/4H-SiC(0001) and measured by ARPES and RHEED.

Materials

Why these are connected

Growth

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Growth

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Growth

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Growth

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