Selective Fabrication of Monolayer 1H- and 1T’-WTe2

Ryuichi Ando; Katsuaki Sugawara; Tappei Kawakami; Takashi Takahashi; Takafumi Sato

doi:10.7566/jpsj.93.085002

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Takashi Takahashi et al.

2025

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

2 preparations2 characterizations2 properties2 figures

ExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

2 preparations2 characterizations1 property2 figures

ExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Materials

WTe₂

Studied Material

Also known as

1H-WTe₂1T’-WTe₂

Variables

polymorph= 1H,1T’

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Selective Fabrication of Monolayer 1H- and 1T’-WTe2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Band Splitting	K-point spin splitting	0.5eV	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1H-WTe₂ band gap	large	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1T’-WTe₂ band gap	nearly zero	WTe₂	Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0	—

Properties

Type	Label	Value	Material	Sample	Source
Band Splitting	K-point spin splitting	0.5eV	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1H-WTe₂ band gap	large	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1T’-WTe₂ band gap	nearly zero	WTe₂	Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0	—

Properties

Type	Label	Value	Material	Sample	Source
Band Splitting	K-point spin splitting	0.5eV	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1H-WTe₂ band gap	large	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1T’-WTe₂ band gap	nearly zero	WTe₂	Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0	—

Properties

Type	Label	Value	Material	Sample	Source
Band Splitting	K-point spin splitting	0.5eV	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1H-WTe₂ band gap	large	WTe₂	Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(00	—
Band Gap	monolayer 1T’-WTe₂ band gap	nearly zero	WTe₂	Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0	—

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

Selective Fabrication of Monolayer 1H- and 1T’-WTe₂

Samples

Monolayer 1H-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Monolayer 1T’-WTe₂ grown by MBE on bilayer graphene/4H-SiC(0001).

Materials

Why these are connected

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Growth

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