Research paperExperimental GrowthExperimental CharacterizationComputational DFTSelective Fabrication of Monolayer 1H- and 1T’-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Takashi Takahashi et al.2025·10.7566/JPSJ.93.085002·arXiv:2501.17527AbstractWe selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T’) WTe₂ on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, revealed several drastic differences between these two polymorphs. The 1T’ phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and band splitting at the K/K’ point. The results suggest a pathway toward nanoelectronic devices based on WTe2.Read more
Monolayer 1H-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 280 °C.1 preparation2 characterizations3 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Monolayer 1T’-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 310 °C.1 preparation2 characterizations5 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Bilayer graphene fabricated on n-type 4H-SiC(0001) by resistive heating prior to WTe₂ growth.1 preparationExperimentalCSubstrate / DielectricSiCSubstrate / DielectricExpand
Free-standing monolayer 1H-WTe₂ used in DFT band-structure calculations.1 characterization2 figuresSimulated Supercell DftWTe₂Studied MaterialExpand
Free-standing monolayer 1T’-WTe₂ used in DFT band-structure calculations.1 characterization1 figureSimulated Supercell DftWTe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTSelective Fabrication of Monolayer 1H- and 1T’-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Takashi Takahashi et al.2025·10.7566/JPSJ.93.085002·arXiv:2501.17527AbstractWe selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T’) WTe₂ on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, revealed several drastic differences between these two polymorphs. The 1T’ phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and band splitting at the K/K’ point. The results suggest a pathway toward nanoelectronic devices based on WTe2.Read more
Monolayer 1H-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 280 °C.1 preparation2 characterizations3 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Monolayer 1T’-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 310 °C.1 preparation2 characterizations5 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Bilayer graphene fabricated on n-type 4H-SiC(0001) by resistive heating prior to WTe₂ growth.1 preparationExperimentalCSubstrate / DielectricSiCSubstrate / DielectricExpand
Free-standing monolayer 1H-WTe₂ used in DFT band-structure calculations.1 characterization2 figuresSimulated Supercell DftWTe₂Studied MaterialExpand
Free-standing monolayer 1T’-WTe₂ used in DFT band-structure calculations.1 characterization1 figureSimulated Supercell DftWTe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTSelective Fabrication of Monolayer 1H- and 1T’-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Takashi Takahashi et al.2025·10.7566/JPSJ.93.085002·arXiv:2501.17527AbstractWe selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T’) WTe₂ on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, revealed several drastic differences between these two polymorphs. The 1T’ phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and band splitting at the K/K’ point. The results suggest a pathway toward nanoelectronic devices based on WTe2.Read more
Monolayer 1H-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 280 °C.1 preparation2 characterizations3 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Monolayer 1T’-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 310 °C.1 preparation2 characterizations5 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Bilayer graphene fabricated on n-type 4H-SiC(0001) by resistive heating prior to WTe₂ growth.1 preparationExperimentalCSubstrate / DielectricSiCSubstrate / DielectricExpand
Free-standing monolayer 1H-WTe₂ used in DFT band-structure calculations.1 characterization2 figuresSimulated Supercell DftWTe₂Studied MaterialExpand
Free-standing monolayer 1T’-WTe₂ used in DFT band-structure calculations.1 characterization1 figureSimulated Supercell DftWTe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTSelective Fabrication of Monolayer 1H- and 1T’-WTe₂Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Takashi Takahashi et al.2025·10.7566/JPSJ.93.085002·arXiv:2501.17527AbstractWe selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T’) WTe₂ on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, revealed several drastic differences between these two polymorphs. The 1T’ phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and band splitting at the K/K’ point. The results suggest a pathway toward nanoelectronic devices based on WTe2.Read more
Monolayer 1H-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 280 °C.1 preparation2 characterizations3 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Monolayer 1T’-WTe₂ fabricated by MBE on bilayer graphene/4H-SiC(0001) at Ts = 310 °C.1 preparation2 characterizations5 properties2 figuresExperimentalWTe₂Studied MaterialCSubstrate / DielectricSiCSubstrate / DielectricExpand
Bilayer graphene fabricated on n-type 4H-SiC(0001) by resistive heating prior to WTe₂ growth.1 preparationExperimentalCSubstrate / DielectricSiCSubstrate / DielectricExpand
Free-standing monolayer 1H-WTe₂ used in DFT band-structure calculations.1 characterization2 figuresSimulated Supercell DftWTe₂Studied MaterialExpand
Free-standing monolayer 1T’-WTe₂ used in DFT band-structure calculations.1 characterization1 figureSimulated Supercell DftWTe₂Studied MaterialExpand