Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111)

Aymen Mahmoudi; Meryem Bouaziz; Niels Chapuis; Geoffroy Kremer; Julien Chaste; Davide Romanin; Marco Pala; François Bertran; Patrick Le Fèvre; Iann C. Gerber; Gilles Patriarche; Fabrice Oehler; Xavier Wallart; Abdelkarim Ouerghi

doi:10.1021/acsnano.3c05818

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Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) | Matter42 Atlas

Properties

Type	Label	Value	Material	Sample	Source
Relative Stability Energy	2H minus 3R	3meV/formula unit	WSe₂	Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison o Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of	—
Xps Binding Energy	W 4f7/2	32.4eV	WSe₂	Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-termina	—
Xps Binding Energy	Se 3d5/2	54.3eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53.7eV	Se	—	—

Properties

Type	Label	Value	Material	Sample	Source
Relative Stability Energy	2H minus 3R	3meV/formula unit	WSe₂	Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison o Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of	—
Xps Binding Energy	W 4f7/2	32.4eV	WSe₂	Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-termina	—
Xps Binding Energy	Se 3d5/2	54.3eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53.7eV	Se	—	—

Properties

Type	Label	Value	Material	Sample	Source
Relative Stability Energy	2H minus 3R	3meV/formula unit	WSe₂	Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison o Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of	—
Xps Binding Energy	W 4f7/2	32.4eV	WSe₂	Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-termina	—
Xps Binding Energy	Se 3d5/2	54.3eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53.7eV	Se	—	—

Properties

Type	Label	Value	Material	Sample	Source
Relative Stability Energy	2H minus 3R	3meV/formula unit	WSe₂	Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison o Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of	—
Xps Binding Energy	W 4f7/2	32.4eV	WSe₂	Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-termina	—
Xps Binding Energy	Se 3d5/2	54.3eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53eV	Se	—	—
Xps Binding Energy	Se 3d5/2	53.7eV	Se	—	—

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)

Samples

Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.

Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.

Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.

Materials

Why these are connected

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