Research paperExperimental GrowthExperimental CharacterizationComputational DFTQuasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer et al.2023AbstractWe demonstrate rhombohedral-stacked bilayer (AB, 3R) WSe₂ grown by molecular beam epitaxy on GaP(111)B. Structural characterization by Raman spectroscopy and high-resolution STEM confirms bilayer thickness and dominant 3R stacking, while ARPES reveals the valence-band structure with the band maximum at Γ. DFT calculations on freestanding bilayer WSe₂ (2H and 3R) support the observed electronic structure and show that the 2H polytype is slightly more stable by 3 meV per formula unit.Read more
Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.3 preparations4 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialGaPSubstrate / DielectricExpand
Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTQuasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer et al.2023AbstractWe demonstrate rhombohedral-stacked bilayer (AB, 3R) WSe₂ grown by molecular beam epitaxy on GaP(111)B. Structural characterization by Raman spectroscopy and high-resolution STEM confirms bilayer thickness and dominant 3R stacking, while ARPES reveals the valence-band structure with the band maximum at Γ. DFT calculations on freestanding bilayer WSe₂ (2H and 3R) support the observed electronic structure and show that the 2H polytype is slightly more stable by 3 meV per formula unit.Read more
Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.3 preparations4 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialGaPSubstrate / DielectricExpand
Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTQuasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer et al.2023AbstractWe demonstrate rhombohedral-stacked bilayer (AB, 3R) WSe₂ grown by molecular beam epitaxy on GaP(111)B. Structural characterization by Raman spectroscopy and high-resolution STEM confirms bilayer thickness and dominant 3R stacking, while ARPES reveals the valence-band structure with the band maximum at Γ. DFT calculations on freestanding bilayer WSe₂ (2H and 3R) support the observed electronic structure and show that the 2H polytype is slightly more stable by 3 meV per formula unit.Read more
Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.3 preparations4 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialGaPSubstrate / DielectricExpand
Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTQuasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe₂ on GaP(111)Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer et al.2023AbstractWe demonstrate rhombohedral-stacked bilayer (AB, 3R) WSe₂ grown by molecular beam epitaxy on GaP(111)B. Structural characterization by Raman spectroscopy and high-resolution STEM confirms bilayer thickness and dominant 3R stacking, while ARPES reveals the valence-band structure with the band maximum at Γ. DFT calculations on freestanding bilayer WSe₂ (2H and 3R) support the observed electronic structure and show that the 2H polytype is slightly more stable by 3 meV per formula unit.Read more
Rhombohedral-stacked bilayer WSe₂ grown by MBE on Se-terminated GaP(111)B and measured after thermal decapping of the amorphous Se cap.3 preparations4 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialGaPSubstrate / DielectricExpand
Freestanding 2H (AA') bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand
Freestanding 3R (AB) bilayer WSe₂ used for DFT comparison of stability and band structure.1 propertySimulated Supercell DftWSe₂Studied MaterialExpand