Research paper
Experimental GrowthExperimental CharacterizationComputed PhononOther ComputationalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties2 figures
1 preparation4 characterizations6 properties2 figures
1 preparation4 characterizations3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe2 Bilayers on Cubic W(110)
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Remote epitaxial frustration
Novel structures of Gallenene intercalated in epitaxial Graphene
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Monolayer control of spin-charge conversion in van der Waals heterostructures
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties2 figures
1 preparation4 characterizations6 properties2 figures
1 preparation4 characterizations3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe2 Bilayers on Cubic W(110)
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Remote epitaxial frustration
Novel structures of Gallenene intercalated in epitaxial Graphene
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Monolayer control of spin-charge conversion in van der Waals heterostructures
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties2 figures
1 preparation4 characterizations6 properties2 figures
1 preparation4 characterizations3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe2 Bilayers on Cubic W(110)
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Remote epitaxial frustration
Novel structures of Gallenene intercalated in epitaxial Graphene
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Monolayer control of spin-charge conversion in van der Waals heterostructures
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations11 properties2 figures
1 preparation4 characterizations6 properties2 figures
1 preparation4 characterizations3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Epitaxial Growth and Electronic Properties of Quasi–Free-Standing Rhombohedral WSe2 Bilayers on Cubic W(110)
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Remote epitaxial frustration
Novel structures of Gallenene intercalated in epitaxial Graphene
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Monolayer control of spin-charge conversion in van der Waals heterostructures
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure