Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride

C. Vergnaud; V. Tiwari; L. Ren; T. Taniguchi; K. Watanabe; H. Okuno; I. Gomes de Moraas; A. Marty; C. Robert; X. Marie; M. Jamet

doi:10.48550/arxiv.2407.12944

Paper details

Research paper

Experimental GrowthExperimental Characterization

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

C. Vergnaud, V. Tiwari, L. Ren, T. Taniguchi et al.

arXiv preprint·2024·10.48550/arxiv.2407.12944·arXiv:2407.12944

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

4 preparations4 characterizations8 properties6 figures

ExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

4 preparations4 characterizations9 properties6 figures

ExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

2 preparations2 characterizations4 properties5 figures

ExperimentalMoSe₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

MoSe₂

Studied Material

Also known as

molybdenum diselenide

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ layer thickness	90nm	SiO₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Grain Diameter	MoSe₂ monolayer grain diameter on hBN	170nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Coverage Fraction	MoSe₂ coverage on hBN	0.42	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.05	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.1	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	500nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	1000nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Layer Thickness	1 ML MoSe₂ on hBN	0.7nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	5.5meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
PL Peak	regex-detected PL peak	633nm	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ layer thickness	90nm	SiO₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Grain Diameter	MoSe₂ monolayer grain diameter on hBN	170nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Coverage Fraction	MoSe₂ coverage on hBN	0.42	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.05	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.1	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	500nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	1000nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Layer Thickness	1 ML MoSe₂ on hBN	0.7nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	5.5meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
PL Peak	regex-detected PL peak	633nm	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ layer thickness	90nm	SiO₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Grain Diameter	MoSe₂ monolayer grain diameter on hBN	170nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Coverage Fraction	MoSe₂ coverage on hBN	0.42	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.05	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.1	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	500nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	1000nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Layer Thickness	1 ML MoSe₂ on hBN	0.7nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	5.5meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
PL Peak	regex-detected PL peak	633nm	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ layer thickness	90nm	SiO₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Grain Diameter	MoSe₂ monolayer grain diameter on hBN	170nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Coverage Fraction	MoSe₂ coverage on hBN	0.42	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.05	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Coverage Fraction	MoSe₂ coverage on hBN	0.1	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	500nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Grain Diameter	MoSe₂ grain size	1000nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Layer Thickness	1 ML MoSe₂ on hBN	0.7nm	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	5.5meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
Pl Peak Fwhm	neutral exciton	40meV	MoSe₂	MoSe₂ directly grown on SiO₂/Si used for comparison in AFM a		—
PL Peak	regex-detected PL peak	633nm	MoSe₂	—	—	—

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Enhanced optical properties of MoSe₂ grown by molecular beam epitaxy on hexagonal boron nitride

Samples

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.

Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.

MoSe₂ directly grown on SiO₂/Si used for comparison in AFM and optical measurements.

Materials

Why these are connected

Growth

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Growth

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Characterization

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Growth

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Growth

Processing

Characterization

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