Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation
1 preparation
1 preparation1 characterization1 property1 figure
1 preparation1 characterization2 properties1 figure
1 preparation3 characterizations2 properties3 figures
1 preparation2 characterizations2 properties2 figures
1 preparation2 characterizations2 figures
1 preparation4 characterizations3 figures
1 preparation
1 preparation
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Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
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Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation
1 preparation
1 preparation1 characterization1 property1 figure
1 preparation1 characterization2 properties1 figure
1 preparation3 characterizations2 properties3 figures
1 preparation2 characterizations2 properties2 figures
1 preparation2 characterizations2 figures
1 preparation4 characterizations3 figures
1 preparation
1 preparation
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Coherent imaging and dynamics of excitons in MoSe2 monolayers epitaxially grown on hexagonal boron nitride
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Bi2Te3–Sb2Te3–Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Monolayer Magnetic Metal with Scalable Conductivity
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Monolayer control of spin-charge conversion in van der Waals heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation
1 preparation
1 preparation1 characterization1 property1 figure
1 preparation1 characterization2 properties1 figure
1 preparation3 characterizations2 properties3 figures
1 preparation2 characterizations2 properties2 figures
1 preparation2 characterizations2 figures
1 preparation4 characterizations3 figures
1 preparation
1 preparation
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Coherent imaging and dynamics of excitons in MoSe2 monolayers epitaxially grown on hexagonal boron nitride
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Bi2Te3–Sb2Te3–Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Monolayer Magnetic Metal with Scalable Conductivity
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Monolayer control of spin-charge conversion in van der Waals heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation
1 preparation
1 preparation1 characterization1 property1 figure
1 preparation1 characterization2 properties1 figure
1 preparation3 characterizations2 properties3 figures
1 preparation2 characterizations2 properties2 figures
1 preparation2 characterizations2 figures
1 preparation4 characterizations3 figures
1 preparation
1 preparation
Related documents with shared materials, methods, properties, or citations.
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Coherent imaging and dynamics of excitons in MoSe2 monolayers epitaxially grown on hexagonal boron nitride
Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Bi2Te3–Sb2Te3–Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Monolayer Magnetic Metal with Scalable Conductivity
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Monolayer control of spin-charge conversion in van der Waals heterostructures
