Research paperExperimental GrowthExperimental CharacterizationBallistic transport in nanodevices based on single-crystalline Cu thin filmYongjin Cho, Su Jae Kim, Min-Hyoung Jung, Yousil Lee et al.2026·arXiv:2602.13624AbstractWe investigated electronic transport in cross-geometry devices fabricated with 90 nm-thick single-crystalline Cu(111) thin film grown by atomic sputtering epitaxy. Negative bend resistance was observed in narrow channels below 85 K, indicating ballistic transport in grain-boundary-free copper thin films.Read more
Single-crystalline Cu(111) thin film (SCCF) used to fabricate cross-geometry Hall-bar devices for ballistic transport measurements.2 preparations4 characterizations6 properties2 figuresExperimentalCuStudied MaterialExpand
Polycrystalline Cu thin film (PCCF) used for comparison in microstructure characterization.2 characterizations2 figuresReferenceCuStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBallistic transport in nanodevices based on single-crystalline Cu thin filmYongjin Cho, Su Jae Kim, Min-Hyoung Jung, Yousil Lee et al.2026·arXiv:2602.13624AbstractWe investigated electronic transport in cross-geometry devices fabricated with 90 nm-thick single-crystalline Cu(111) thin film grown by atomic sputtering epitaxy. Negative bend resistance was observed in narrow channels below 85 K, indicating ballistic transport in grain-boundary-free copper thin films.Read more
Single-crystalline Cu(111) thin film (SCCF) used to fabricate cross-geometry Hall-bar devices for ballistic transport measurements.2 preparations4 characterizations6 properties2 figuresExperimentalCuStudied MaterialExpand
Polycrystalline Cu thin film (PCCF) used for comparison in microstructure characterization.2 characterizations2 figuresReferenceCuStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBallistic transport in nanodevices based on single-crystalline Cu thin filmYongjin Cho, Su Jae Kim, Min-Hyoung Jung, Yousil Lee et al.2026·arXiv:2602.13624AbstractWe investigated electronic transport in cross-geometry devices fabricated with 90 nm-thick single-crystalline Cu(111) thin film grown by atomic sputtering epitaxy. Negative bend resistance was observed in narrow channels below 85 K, indicating ballistic transport in grain-boundary-free copper thin films.Read more
Single-crystalline Cu(111) thin film (SCCF) used to fabricate cross-geometry Hall-bar devices for ballistic transport measurements.2 preparations4 characterizations6 properties2 figuresExperimentalCuStudied MaterialExpand
Polycrystalline Cu thin film (PCCF) used for comparison in microstructure characterization.2 characterizations2 figuresReferenceCuStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBallistic transport in nanodevices based on single-crystalline Cu thin filmYongjin Cho, Su Jae Kim, Min-Hyoung Jung, Yousil Lee et al.2026·arXiv:2602.13624AbstractWe investigated electronic transport in cross-geometry devices fabricated with 90 nm-thick single-crystalline Cu(111) thin film grown by atomic sputtering epitaxy. Negative bend resistance was observed in narrow channels below 85 K, indicating ballistic transport in grain-boundary-free copper thin films.Read more
Single-crystalline Cu(111) thin film (SCCF) used to fabricate cross-geometry Hall-bar devices for ballistic transport measurements.2 preparations4 characterizations6 properties2 figuresExperimentalCuStudied MaterialExpand
Polycrystalline Cu thin film (PCCF) used for comparison in microstructure characterization.2 characterizations2 figuresReferenceCuStudied MaterialExpand