Research paper
TheoreticalBiexciton crystal in a two-dimensional semiconductor heteropentalayer
Yi Huang, B. I. Shklovskii
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Biexciton Density | nc | 0.14d^-2 | — | |||
| Critical Exciton Density | nxc | 0.12d^-2 | — | |||
| Layer Thickness | d | 0.7nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Biexciton Density | nc | 0.14d^-2 | — | |||
| Critical Exciton Density | nxc | 0.12d^-2 | — | |||
| Layer Thickness | d | 0.7nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Biexciton Density | nc | 0.14d^-2 | — | |||
| Critical Exciton Density | nxc | 0.12d^-2 | — | |||
| Layer Thickness | d | 0.7nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Biexciton Density | nc | 0.14d^-2 | — | |||
| Critical Exciton Density | nxc | 0.12d^-2 | — | |||
| Layer Thickness | d | 0.7nm | — |