Research paperTheoreticalBiexciton crystal in a two-dimensional semiconductor heteropentalayerYi Huang, B. I. Shklovskii2022·10.1021/acs.nanolett.9b05086·arXiv:2207.11319AbstractWe study the gas of indirect dipolar excitons created by interband illumination of a pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe2. We show that two colinear indirect excitons bind into a linear biexciton with twice larger dipole moment. Two biexcitons with opposite dipole directions attract each other at large distances and repel each other at short distances, leading to a staggered anti-ferroelectric square lattice. The electrostatic energy of this crystal per biexciton has a minimum at n = nc = 0.14d−2, where d ∼ 0.7 nm is a single layer thickness. At small illumination intensity, biexcitons condense into sparse crystallites with n = nc, producing a red-shifted photoluminescence line independent of light intensity. A five-layer capacitor with hBN spacers is also predicted to undergo an abrupt transition to a similar biexciton crystal at a critical applied voltage, where the differential capacitance diverges.Read more
Pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe₂ heterostructure supporting indirect excitons and linear biexcitons.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Trilayer WSe₂/MoSe₂/WSe₂ heterostructure used for comparison with indirect exciton crystal physics.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Five-layer MoSe₂ capacitor with identical hBN spacers discussed as a voltage-tuned analogue of the biexciton crystal system.No measurements recordedSimulatedMoSe₂Studied MaterialBNSubstrate / DielectricExpand
Research paperTheoreticalBiexciton crystal in a two-dimensional semiconductor heteropentalayerYi Huang, B. I. Shklovskii2022·10.1021/acs.nanolett.9b05086·arXiv:2207.11319AbstractWe study the gas of indirect dipolar excitons created by interband illumination of a pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe2. We show that two colinear indirect excitons bind into a linear biexciton with twice larger dipole moment. Two biexcitons with opposite dipole directions attract each other at large distances and repel each other at short distances, leading to a staggered anti-ferroelectric square lattice. The electrostatic energy of this crystal per biexciton has a minimum at n = nc = 0.14d−2, where d ∼ 0.7 nm is a single layer thickness. At small illumination intensity, biexcitons condense into sparse crystallites with n = nc, producing a red-shifted photoluminescence line independent of light intensity. A five-layer capacitor with hBN spacers is also predicted to undergo an abrupt transition to a similar biexciton crystal at a critical applied voltage, where the differential capacitance diverges.Read more
Pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe₂ heterostructure supporting indirect excitons and linear biexcitons.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Trilayer WSe₂/MoSe₂/WSe₂ heterostructure used for comparison with indirect exciton crystal physics.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Five-layer MoSe₂ capacitor with identical hBN spacers discussed as a voltage-tuned analogue of the biexciton crystal system.No measurements recordedSimulatedMoSe₂Studied MaterialBNSubstrate / DielectricExpand
Research paperTheoreticalBiexciton crystal in a two-dimensional semiconductor heteropentalayerYi Huang, B. I. Shklovskii2022·10.1021/acs.nanolett.9b05086·arXiv:2207.11319AbstractWe study the gas of indirect dipolar excitons created by interband illumination of a pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe2. We show that two colinear indirect excitons bind into a linear biexciton with twice larger dipole moment. Two biexcitons with opposite dipole directions attract each other at large distances and repel each other at short distances, leading to a staggered anti-ferroelectric square lattice. The electrostatic energy of this crystal per biexciton has a minimum at n = nc = 0.14d−2, where d ∼ 0.7 nm is a single layer thickness. At small illumination intensity, biexcitons condense into sparse crystallites with n = nc, producing a red-shifted photoluminescence line independent of light intensity. A five-layer capacitor with hBN spacers is also predicted to undergo an abrupt transition to a similar biexciton crystal at a critical applied voltage, where the differential capacitance diverges.Read more
Pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe₂ heterostructure supporting indirect excitons and linear biexcitons.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Trilayer WSe₂/MoSe₂/WSe₂ heterostructure used for comparison with indirect exciton crystal physics.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Five-layer MoSe₂ capacitor with identical hBN spacers discussed as a voltage-tuned analogue of the biexciton crystal system.No measurements recordedSimulatedMoSe₂Studied MaterialBNSubstrate / DielectricExpand
Research paperTheoreticalBiexciton crystal in a two-dimensional semiconductor heteropentalayerYi Huang, B. I. Shklovskii2022·10.1021/acs.nanolett.9b05086·arXiv:2207.11319AbstractWe study the gas of indirect dipolar excitons created by interband illumination of a pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe2. We show that two colinear indirect excitons bind into a linear biexciton with twice larger dipole moment. Two biexcitons with opposite dipole directions attract each other at large distances and repel each other at short distances, leading to a staggered anti-ferroelectric square lattice. The electrostatic energy of this crystal per biexciton has a minimum at n = nc = 0.14d−2, where d ∼ 0.7 nm is a single layer thickness. At small illumination intensity, biexcitons condense into sparse crystallites with n = nc, producing a red-shifted photoluminescence line independent of light intensity. A five-layer capacitor with hBN spacers is also predicted to undergo an abrupt transition to a similar biexciton crystal at a critical applied voltage, where the differential capacitance diverges.Read more
Pentalayer WSe₂/MoSe₂/WSe₂/MoSe₂/WSe₂ heterostructure supporting indirect excitons and linear biexcitons.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Trilayer WSe₂/MoSe₂/WSe₂ heterostructure used for comparison with indirect exciton crystal physics.2 propertiesSimulatedWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Five-layer MoSe₂ capacitor with identical hBN spacers discussed as a voltage-tuned analogue of the biexciton crystal system.No measurements recordedSimulatedMoSe₂Studied MaterialBNSubstrate / DielectricExpand
