Research paperExperimental CharacterizationCompetition between excitonic insulators and quantum Hall states in correlated electron-hole bilayersRuishi Qi, Qize Li, Zuocheng Zhang, Zhiyuan Cui et al.2025·10.48550/arXiv.2311.18069·arXiv:2501.18168AbstractStrongly coupled electron-hole bilayers based on MoSe₂/hBN/WSe₂ heterostructures are studied under out-of-plane magnetic fields. The work reports excitonic quantum oscillations in Coulomb drag and resistance, and identifies multiple magnetic-field- and temperature-driven phase transitions between excitonic insulator and bilayer quantum Hall insulator states.Read more
Representative dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 2.3 nm (7-layer) hBN tunneling barrier, graphite gates, and Pt/Cr electrodes.3 preparations1 characterization10 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Second device D₂ with the same MoSe₂/hBN/WSe₂ architecture used to reproduce the main results.3 preparations1 characterization9 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Research paperExperimental CharacterizationCompetition between excitonic insulators and quantum Hall states in correlated electron-hole bilayersRuishi Qi, Qize Li, Zuocheng Zhang, Zhiyuan Cui et al.2025·10.48550/arXiv.2311.18069·arXiv:2501.18168AbstractStrongly coupled electron-hole bilayers based on MoSe₂/hBN/WSe₂ heterostructures are studied under out-of-plane magnetic fields. The work reports excitonic quantum oscillations in Coulomb drag and resistance, and identifies multiple magnetic-field- and temperature-driven phase transitions between excitonic insulator and bilayer quantum Hall insulator states.Read more
Representative dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 2.3 nm (7-layer) hBN tunneling barrier, graphite gates, and Pt/Cr electrodes.3 preparations1 characterization10 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Second device D₂ with the same MoSe₂/hBN/WSe₂ architecture used to reproduce the main results.3 preparations1 characterization9 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Research paperExperimental CharacterizationCompetition between excitonic insulators and quantum Hall states in correlated electron-hole bilayersRuishi Qi, Qize Li, Zuocheng Zhang, Zhiyuan Cui et al.2025·10.48550/arXiv.2311.18069·arXiv:2501.18168AbstractStrongly coupled electron-hole bilayers based on MoSe₂/hBN/WSe₂ heterostructures are studied under out-of-plane magnetic fields. The work reports excitonic quantum oscillations in Coulomb drag and resistance, and identifies multiple magnetic-field- and temperature-driven phase transitions between excitonic insulator and bilayer quantum Hall insulator states.Read more
Representative dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 2.3 nm (7-layer) hBN tunneling barrier, graphite gates, and Pt/Cr electrodes.3 preparations1 characterization10 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Second device D₂ with the same MoSe₂/hBN/WSe₂ architecture used to reproduce the main results.3 preparations1 characterization9 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Research paperExperimental CharacterizationCompetition between excitonic insulators and quantum Hall states in correlated electron-hole bilayersRuishi Qi, Qize Li, Zuocheng Zhang, Zhiyuan Cui et al.2025·10.48550/arXiv.2311.18069·arXiv:2501.18168AbstractStrongly coupled electron-hole bilayers based on MoSe₂/hBN/WSe₂ heterostructures are studied under out-of-plane magnetic fields. The work reports excitonic quantum oscillations in Coulomb drag and resistance, and identifies multiple magnetic-field- and temperature-driven phase transitions between excitonic insulator and bilayer quantum Hall insulator states.Read more
Representative dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 2.3 nm (7-layer) hBN tunneling barrier, graphite gates, and Pt/Cr electrodes.3 preparations1 characterization10 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
Second device D₂ with the same MoSe₂/hBN/WSe₂ architecture used to reproduce the main results.3 preparations1 characterization9 properties4 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactPtCapping Or ContactCrCapping Or ContactExpand
