Research paperExperimental CharacterizationOther ComputationalUltrafast Charge-Doping via Photo-Thermionic Injection in van der Waals DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·arXiv:2510.21008AbstractVan der Waals heterostructures of two-dimensional materials are explored under femtosecond optical excitation. The paper investigates a dual-gated twisted WSe₂ bilayer device with few-layer graphite gates and hexagonal boron nitride spacers, and shows ultrafast photodoping through photo-thermionic hole injection from the graphite gates. Transient reflectance measurements reveal gate-voltage shifts, persistent signatures on microsecond timescales, and photoinduced absorption consistent with transiently altered charge density. The injected holes are controlled by excitation energy, fluence, and gate bias.Read more
Dual-gated twisted WSe₂ bilayer device D₁ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Reproducible dual-gated twisted WSe₂ bilayer device D₂ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationOther ComputationalUltrafast Charge-Doping via Photo-Thermionic Injection in van der Waals DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·arXiv:2510.21008AbstractVan der Waals heterostructures of two-dimensional materials are explored under femtosecond optical excitation. The paper investigates a dual-gated twisted WSe₂ bilayer device with few-layer graphite gates and hexagonal boron nitride spacers, and shows ultrafast photodoping through photo-thermionic hole injection from the graphite gates. Transient reflectance measurements reveal gate-voltage shifts, persistent signatures on microsecond timescales, and photoinduced absorption consistent with transiently altered charge density. The injected holes are controlled by excitation energy, fluence, and gate bias.Read more
Dual-gated twisted WSe₂ bilayer device D₁ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Reproducible dual-gated twisted WSe₂ bilayer device D₂ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationOther ComputationalUltrafast Charge-Doping via Photo-Thermionic Injection in van der Waals DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·arXiv:2510.21008AbstractVan der Waals heterostructures of two-dimensional materials are explored under femtosecond optical excitation. The paper investigates a dual-gated twisted WSe₂ bilayer device with few-layer graphite gates and hexagonal boron nitride spacers, and shows ultrafast photodoping through photo-thermionic hole injection from the graphite gates. Transient reflectance measurements reveal gate-voltage shifts, persistent signatures on microsecond timescales, and photoinduced absorption consistent with transiently altered charge density. The injected holes are controlled by excitation energy, fluence, and gate bias.Read more
Dual-gated twisted WSe₂ bilayer device D₁ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Reproducible dual-gated twisted WSe₂ bilayer device D₂ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationOther ComputationalUltrafast Charge-Doping via Photo-Thermionic Injection in van der Waals DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·arXiv:2510.21008AbstractVan der Waals heterostructures of two-dimensional materials are explored under femtosecond optical excitation. The paper investigates a dual-gated twisted WSe₂ bilayer device with few-layer graphite gates and hexagonal boron nitride spacers, and shows ultrafast photodoping through photo-thermionic hole injection from the graphite gates. Transient reflectance measurements reveal gate-voltage shifts, persistent signatures on microsecond timescales, and photoinduced absorption consistent with transiently altered charge density. The injected holes are controlled by excitation energy, fluence, and gate bias.Read more
Dual-gated twisted WSe₂ bilayer device D₁ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand
Reproducible dual-gated twisted WSe₂ bilayer device D₂ with few-layer graphite top and bottom gates and hBN spacers.1 characterization2 properties2 figuresExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactExpand