Research paperExperimental CharacterizationTheoreticalField-Tunable Valley Coupling and Localization in a Dodecagonal Semiconductor QuasicrystalZhida Liu, Qiang Gao, Yanxing Li, Xiaohui Liu et al.arXiv preprint·2024·10.48550/arxiv.2408.02176·arXiv:2408.02176AbstractWe reveal strong coupling between K and Q valleys in a dodecagonal WSe₂ bilayer quasicrystal, where a modest perpendicular electric field induces hybrid excitonic states and suppresses the trion resonance. The work combines optical spectroscopy and scanning tunneling spectroscopy with model calculations of Umklapp-enabled valley hybridization and localization.Read more
hBN-encapsulated 30° WSe₂ twisted bilayer quasicrystal in a dual-gated device.2 characterizations2 figuresExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
hBN-encapsulated 21.8° twisted WSe₂ bilayer moiré crystal used as the commensurate comparison device.1 characterization1 figureExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalField-Tunable Valley Coupling and Localization in a Dodecagonal Semiconductor QuasicrystalZhida Liu, Qiang Gao, Yanxing Li, Xiaohui Liu et al.arXiv preprint·2024·10.48550/arxiv.2408.02176·arXiv:2408.02176AbstractWe reveal strong coupling between K and Q valleys in a dodecagonal WSe₂ bilayer quasicrystal, where a modest perpendicular electric field induces hybrid excitonic states and suppresses the trion resonance. The work combines optical spectroscopy and scanning tunneling spectroscopy with model calculations of Umklapp-enabled valley hybridization and localization.Read more
hBN-encapsulated 30° WSe₂ twisted bilayer quasicrystal in a dual-gated device.2 characterizations2 figuresExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
hBN-encapsulated 21.8° twisted WSe₂ bilayer moiré crystal used as the commensurate comparison device.1 characterization1 figureExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalField-Tunable Valley Coupling and Localization in a Dodecagonal Semiconductor QuasicrystalZhida Liu, Qiang Gao, Yanxing Li, Xiaohui Liu et al.arXiv preprint·2024·10.48550/arxiv.2408.02176·arXiv:2408.02176AbstractWe reveal strong coupling between K and Q valleys in a dodecagonal WSe₂ bilayer quasicrystal, where a modest perpendicular electric field induces hybrid excitonic states and suppresses the trion resonance. The work combines optical spectroscopy and scanning tunneling spectroscopy with model calculations of Umklapp-enabled valley hybridization and localization.Read more
hBN-encapsulated 30° WSe₂ twisted bilayer quasicrystal in a dual-gated device.2 characterizations2 figuresExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
hBN-encapsulated 21.8° twisted WSe₂ bilayer moiré crystal used as the commensurate comparison device.1 characterization1 figureExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalField-Tunable Valley Coupling and Localization in a Dodecagonal Semiconductor QuasicrystalZhida Liu, Qiang Gao, Yanxing Li, Xiaohui Liu et al.arXiv preprint·2024·10.48550/arxiv.2408.02176·arXiv:2408.02176AbstractWe reveal strong coupling between K and Q valleys in a dodecagonal WSe₂ bilayer quasicrystal, where a modest perpendicular electric field induces hybrid excitonic states and suppresses the trion resonance. The work combines optical spectroscopy and scanning tunneling spectroscopy with model calculations of Umklapp-enabled valley hybridization and localization.Read more
hBN-encapsulated 30° WSe₂ twisted bilayer quasicrystal in a dual-gated device.2 characterizations2 figuresExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand
hBN-encapsulated 21.8° twisted WSe₂ bilayer moiré crystal used as the commensurate comparison device.1 characterization1 figureExperimentalWSe₂Studied MaterialBNSubstrate / DielectricExpand