Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii; M. S. Shur; M. Ryzhii; V. Mitin; C. Tang; T. Otsuji

doi:10.1142/s0129156424400238

Paper details

Research paper

TheoreticalComputed Raman

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin et al.

2023·10.1142/s0129156424400238·arXiv:2310.09741

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

No measurements recorded

SimulatedCStudied Materialh-BNSubstrate / DielectricPStudied MaterialAlCapping Or Contact

Materials

graphene

Studied Material

Also known as

GCGC channel

Variables

doping= n-doped

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer | Matter42 Literature

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Samples

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

Materials

Why these are connected

Simulations

Simulations

Simulations

Simulations