Imaging the Sub-Moiré Potential Landscape using an Atomic Single Electron Transistor

Paper details

Research paper

Experimental CharacterizationTheoretical

Dahlia R. Klein, Uri Zondiner, Amit Keren, John Birkbeck et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization5 properties3 figures

ExperimentalCStudied MaterialBNSubstrate / Dielectric

3 properties

ExperimentalWSe₂Studied MaterialCStudied MaterialCCapping Or Contact

graphene

Studied Material

Also known as

studied material

hexagonal boron nitride

Substrate / Dielectric

Also known as

Related documents with shared materials, methods, properties, or citations.

Imaging the Sub-Moiré Potential Landscape using an Atomic Single Electron Transistor | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Electrostatic Potential Amplitude	peak-to-peak potential amplitude	63mV	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Symmetry	moiré potential symmetry	approximate C2 symmetry	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Spatial Resolution	Atomic SET imaging resolution	1nm	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Sensitivity	Atomic SET sensitivity	6uV/√Hz	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Moiré Heterostrain	heterostrain magnitude	0.3%	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Capacitance	fridge line capacitance	22fF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Capacitance	effective contact capacitance	0.3pF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Resistance	low-frequency contact resistance	10GΩ	WSe₂ C C	Atomic SET junction used to identify and characterize single	—

Type	Label	Value	Material	Sample	Source
Electrostatic Potential Amplitude	peak-to-peak potential amplitude	63mV	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Symmetry	moiré potential symmetry	approximate C2 symmetry	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Spatial Resolution	Atomic SET imaging resolution	1nm	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Sensitivity	Atomic SET sensitivity	6uV/√Hz	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Moiré Heterostrain	heterostrain magnitude	0.3%	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Capacitance	fridge line capacitance	22fF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Capacitance	effective contact capacitance	0.3pF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Resistance	low-frequency contact resistance	10GΩ	WSe₂ C C	Atomic SET junction used to identify and characterize single	—

Type	Label	Value	Material	Sample	Source
Electrostatic Potential Amplitude	peak-to-peak potential amplitude	63mV	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Symmetry	moiré potential symmetry	approximate C2 symmetry	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Spatial Resolution	Atomic SET imaging resolution	1nm	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Sensitivity	Atomic SET sensitivity	6uV/√Hz	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Moiré Heterostrain	heterostrain magnitude	0.3%	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Capacitance	fridge line capacitance	22fF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Capacitance	effective contact capacitance	0.3pF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Resistance	low-frequency contact resistance	10GΩ	WSe₂ C C	Atomic SET junction used to identify and characterize single	—

Type	Label	Value	Material	Sample	Source
Electrostatic Potential Amplitude	peak-to-peak potential amplitude	63mV	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Symmetry	moiré potential symmetry	approximate C2 symmetry	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Spatial Resolution	Atomic SET imaging resolution	1nm	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Potential Sensitivity	Atomic SET sensitivity	6uV/√Hz	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Moiré Heterostrain	heterostrain magnitude	0.3%	C BN	Aligned graphene/hexagonal boron nitride moiré heterostructu	—
Capacitance	fridge line capacitance	22fF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Capacitance	effective contact capacitance	0.3pF	WSe₂ C C	Atomic SET junction used to identify and characterize single	—
Resistance	low-frequency contact resistance	10GΩ	WSe₂ C C	Atomic SET junction used to identify and characterize single	—