Research paper
Computational DFTComputational Kinetic Model| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Zero Phonon Line Energy | VNCB(-) HS | 0.64eV | — | |||
| Zero Phonon Line Energy | VNCB(-) LS | 0.87eV | — | |||
| Zero Phonon Line Energy | VNCB(0) HS | 1.86eV | — | |||
| Zero Phonon Line Energy | VNCB(0) LS | 1.93eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) HS | 1.81eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) LS | 2.1eV | — | |||
| Charge Transition Level | (+1/0) | 2.88eV | — | |||
| Charge Transition Level | (0/-1) | 5.3eV | — | |||
| Charge Transition Level | (+1/0) | 1.51eV | — | |||
| Charge Transition Level | (0/-1) | 3.19eV | — | |||
| Charge Transition Level | (+2/+1) | 1.11eV | — | |||
| Charge Transition Level | (-1/-2) | 4.49eV | — | |||
| Formation Energy Difference | E(n-CNVB) - E(sw-CNVB) | 0.4eV | — | |||
| Relaxation Energy | HS CNVB(-) | 0.16eV | — | |||
| Huang Rhys Factor | HS CNVB(-) | 2.2 | — | |||
| Huang Rhys Factor | VNCB(0) HS | 1.5 | — | |||
| Huang Rhys Factor | VNCB(0) LS | 7.25 | — | |||
| Huang Rhys Factor | VNCB(+1) LS | 24 | — | |||
| Huang Rhys Factor | CNVB(0) singlet | 8.17 | — | |||
| Vertical Transition Energy | CNVB(-) HS | 1.89eV | — | |||
| Annealing Temperature | CNVB(-) LS barrier-derived annealing temperature | 353K | — | |||
| Annealing Temperature | CNVB(-) HS barrier-derived annealing temperature | 705K | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Zero Phonon Line Energy | VNCB(-) HS | 0.64eV | — | |||
| Zero Phonon Line Energy | VNCB(-) LS | 0.87eV | — | |||
| Zero Phonon Line Energy | VNCB(0) HS | 1.86eV | — | |||
| Zero Phonon Line Energy | VNCB(0) LS | 1.93eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) HS | 1.81eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) LS | 2.1eV | — | |||
| Charge Transition Level | (+1/0) | 2.88eV | — | |||
| Charge Transition Level | (0/-1) | 5.3eV | — | |||
| Charge Transition Level | (+1/0) | 1.51eV | — | |||
| Charge Transition Level | (0/-1) | 3.19eV | — | |||
| Charge Transition Level | (+2/+1) | 1.11eV | — | |||
| Charge Transition Level | (-1/-2) | 4.49eV | — | |||
| Formation Energy Difference | E(n-CNVB) - E(sw-CNVB) | 0.4eV | — | |||
| Relaxation Energy | HS CNVB(-) | 0.16eV | — | |||
| Huang Rhys Factor | HS CNVB(-) | 2.2 | — | |||
| Huang Rhys Factor | VNCB(0) HS | 1.5 | — | |||
| Huang Rhys Factor | VNCB(0) LS | 7.25 | — | |||
| Huang Rhys Factor | VNCB(+1) LS | 24 | — | |||
| Huang Rhys Factor | CNVB(0) singlet | 8.17 | — | |||
| Vertical Transition Energy | CNVB(-) HS | 1.89eV | — | |||
| Annealing Temperature | CNVB(-) LS barrier-derived annealing temperature | 353K | — | |||
| Annealing Temperature | CNVB(-) HS barrier-derived annealing temperature | 705K | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Zero Phonon Line Energy | VNCB(-) HS | 0.64eV | — | |||
| Zero Phonon Line Energy | VNCB(-) LS | 0.87eV | — | |||
| Zero Phonon Line Energy | VNCB(0) HS | 1.86eV | — | |||
| Zero Phonon Line Energy | VNCB(0) LS | 1.93eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) HS | 1.81eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) LS | 2.1eV | — | |||
| Charge Transition Level | (+1/0) | 2.88eV | — | |||
| Charge Transition Level | (0/-1) | 5.3eV | — | |||
| Charge Transition Level | (+1/0) | 1.51eV | — | |||
| Charge Transition Level | (0/-1) | 3.19eV | — | |||
| Charge Transition Level | (+2/+1) | 1.11eV | — | |||
| Charge Transition Level | (-1/-2) | 4.49eV | — | |||
| Formation Energy Difference | E(n-CNVB) - E(sw-CNVB) | 0.4eV | — | |||
| Relaxation Energy | HS CNVB(-) | 0.16eV | — | |||
| Huang Rhys Factor | HS CNVB(-) | 2.2 | — | |||
| Huang Rhys Factor | VNCB(0) HS | 1.5 | — | |||
| Huang Rhys Factor | VNCB(0) LS | 7.25 | — | |||
| Huang Rhys Factor | VNCB(+1) LS | 24 | — | |||
| Huang Rhys Factor | CNVB(0) singlet | 8.17 | — | |||
| Vertical Transition Energy | CNVB(-) HS | 1.89eV | — | |||
| Annealing Temperature | CNVB(-) LS barrier-derived annealing temperature | 353K | — | |||
| Annealing Temperature | CNVB(-) HS barrier-derived annealing temperature | 705K | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Zero Phonon Line Energy | VNCB(-) HS | 0.64eV | — | |||
| Zero Phonon Line Energy | VNCB(-) LS | 0.87eV | — | |||
| Zero Phonon Line Energy | VNCB(0) HS | 1.86eV | — | |||
| Zero Phonon Line Energy | VNCB(0) LS | 1.93eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) HS | 1.81eV | — | |||
| Zero Phonon Line Energy | VNCB(+1) LS | 2.1eV | — | |||
| Charge Transition Level | (+1/0) | 2.88eV | — | |||
| Charge Transition Level | (0/-1) | 5.3eV | — | |||
| Charge Transition Level | (+1/0) | 1.51eV | — | |||
| Charge Transition Level | (0/-1) | 3.19eV | — | |||
| Charge Transition Level | (+2/+1) | 1.11eV | — | |||
| Charge Transition Level | (-1/-2) | 4.49eV | — | |||
| Formation Energy Difference | E(n-CNVB) - E(sw-CNVB) | 0.4eV | — | |||
| Relaxation Energy | HS CNVB(-) | 0.16eV | — | |||
| Huang Rhys Factor | HS CNVB(-) | 2.2 | — | |||
| Huang Rhys Factor | VNCB(0) HS | 1.5 | — | |||
| Huang Rhys Factor | VNCB(0) LS | 7.25 | — | |||
| Huang Rhys Factor | VNCB(+1) LS | 24 | — | |||
| Huang Rhys Factor | CNVB(0) singlet | 8.17 | — | |||
| Vertical Transition Energy | CNVB(-) HS | 1.89eV | — | |||
| Annealing Temperature | CNVB(-) LS barrier-derived annealing temperature | 353K | — | |||
| Annealing Temperature | CNVB(-) HS barrier-derived annealing temperature | 705K | — |