Research paperComputational DFTTheoreticalVertical Ferroelectricity in Van der Waals Materials: Models and DevicesYuwen Zhang, Chunfeng Cui, Chaoyu He, Tao Ouyang et al.arXiv preprint·2023·10.1063/5.0168454·arXiv:2307.11267AbstractBased on van der Waals stacking, a generic A/B/A tri-layer model is proposed for vertical ferroelectric devices, where a freely movable center layer is packaged in two fixed and symmetrically stacked layers. First-principles calculations on h-BN/h-BN/h-BN and h-BN/Graphene/h-BN structures evaluate ferroelectric polarization and switching barriers, showing spontaneous polarizations of 1.83 and 1.35 pC/m and low switching barriers of 10 and 8 meV/atom, respectively.Read more
Simulated h-BN/h-BN/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialExpand
Simulated h-BN/graphene/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
Research paperComputational DFTTheoreticalVertical Ferroelectricity in Van der Waals Materials: Models and DevicesYuwen Zhang, Chunfeng Cui, Chaoyu He, Tao Ouyang et al.arXiv preprint·2023·10.1063/5.0168454·arXiv:2307.11267AbstractBased on van der Waals stacking, a generic A/B/A tri-layer model is proposed for vertical ferroelectric devices, where a freely movable center layer is packaged in two fixed and symmetrically stacked layers. First-principles calculations on h-BN/h-BN/h-BN and h-BN/Graphene/h-BN structures evaluate ferroelectric polarization and switching barriers, showing spontaneous polarizations of 1.83 and 1.35 pC/m and low switching barriers of 10 and 8 meV/atom, respectively.Read more
Simulated h-BN/h-BN/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialExpand
Simulated h-BN/graphene/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
Research paperComputational DFTTheoreticalVertical Ferroelectricity in Van der Waals Materials: Models and DevicesYuwen Zhang, Chunfeng Cui, Chaoyu He, Tao Ouyang et al.arXiv preprint·2023·10.1063/5.0168454·arXiv:2307.11267AbstractBased on van der Waals stacking, a generic A/B/A tri-layer model is proposed for vertical ferroelectric devices, where a freely movable center layer is packaged in two fixed and symmetrically stacked layers. First-principles calculations on h-BN/h-BN/h-BN and h-BN/Graphene/h-BN structures evaluate ferroelectric polarization and switching barriers, showing spontaneous polarizations of 1.83 and 1.35 pC/m and low switching barriers of 10 and 8 meV/atom, respectively.Read more
Simulated h-BN/h-BN/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialExpand
Simulated h-BN/graphene/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
Research paperComputational DFTTheoreticalVertical Ferroelectricity in Van der Waals Materials: Models and DevicesYuwen Zhang, Chunfeng Cui, Chaoyu He, Tao Ouyang et al.arXiv preprint·2023·10.1063/5.0168454·arXiv:2307.11267AbstractBased on van der Waals stacking, a generic A/B/A tri-layer model is proposed for vertical ferroelectric devices, where a freely movable center layer is packaged in two fixed and symmetrically stacked layers. First-principles calculations on h-BN/h-BN/h-BN and h-BN/Graphene/h-BN structures evaluate ferroelectric polarization and switching barriers, showing spontaneous polarizations of 1.83 and 1.35 pC/m and low switching barriers of 10 and 8 meV/atom, respectively.Read more
Simulated h-BN/h-BN/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialExpand
Simulated h-BN/graphene/h-BN trilayer vertical ferroelectric device model.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
