Research paper
Computational DFTTheoreticalVertical Ferroelectricity in Van der Waals Materials: Models and Devices
Yuwen Zhang, Chunfeng Cui, Chaoyu He, Tao Ouyang et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Stacking Energy | lowest-energy stacking configuration (V) | -8.891eV/atom | — | |||
| Stacking Energy | lowest-energy stacking configuration (III) | -9.021eV/atom | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.83pC/m | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.35pC/m | — | |||
| Switching Barrier | ferroelectric switching barrier | 10meV/atom | — | |||
| Switching Barrier | ferroelectric switching barrier | 8meV/atom | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Stacking Energy | lowest-energy stacking configuration (V) | -8.891eV/atom | — | |||
| Stacking Energy | lowest-energy stacking configuration (III) | -9.021eV/atom | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.83pC/m | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.35pC/m | — | |||
| Switching Barrier | ferroelectric switching barrier | 10meV/atom | — | |||
| Switching Barrier | ferroelectric switching barrier | 8meV/atom | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Stacking Energy | lowest-energy stacking configuration (V) | -8.891eV/atom | — | |||
| Stacking Energy | lowest-energy stacking configuration (III) | -9.021eV/atom | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.83pC/m | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.35pC/m | — | |||
| Switching Barrier | ferroelectric switching barrier | 10meV/atom | — | |||
| Switching Barrier | ferroelectric switching barrier | 8meV/atom | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Stacking Energy | lowest-energy stacking configuration (V) | -8.891eV/atom | — | |||
| Stacking Energy | lowest-energy stacking configuration (III) | -9.021eV/atom | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.83pC/m | — | |||
| Ferroelectric Polarization | spontaneous polarization | 1.35pC/m | — | |||
| Switching Barrier | ferroelectric switching barrier | 10meV/atom | — | |||
| Switching Barrier | ferroelectric switching barrier | 8meV/atom | — |