Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations4 properties1 figure
1 preparation
4 preparations4 characterizations5 properties1 figure
1 characterization
1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | mica flake thickness range | 6-10nm | — | |||
| Electron Beam Accelerating Voltage | localized irradiation voltage | 3kV | — | |||
| Electron Beam Current | localized irradiation current | 25pA | — | |||
| Electron Beam Dwell Time | local irradiation dwell time | 10s | — | |||
| Electron Fluence | fluency at each irradiated spot | 7.7e17cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 530nm | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.19Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 20.1Å | — | — | — | — |
| Optical Band Gap | band gap | 7.91eV | — | — | — | — |
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High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
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Strain-Enhanced Coherence in Curved hBN Quantum Emitters
Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations4 properties1 figure
1 preparation
4 preparations4 characterizations5 properties1 figure
1 characterization
1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | mica flake thickness range | 6-10nm | — | |||
| Electron Beam Accelerating Voltage | localized irradiation voltage | 3kV | — | |||
| Electron Beam Current | localized irradiation current | 25pA | — | |||
| Electron Beam Dwell Time | local irradiation dwell time | 10s | — | |||
| Electron Fluence | fluency at each irradiated spot | 7.7e17cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 530nm | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.19Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 20.1Å | — | — | — | — |
| Optical Band Gap | band gap | 7.91eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature
Exciton self-trapping in twisted hexagonal boron nitride homostructures
Strain-Enhanced Coherence in Curved hBN Quantum Emitters
Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
Room temperature quantum emitters in van der Waals α-MoO3
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects
Polarization dynamics of solid-state quantum emitters
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations4 properties1 figure
1 preparation
4 preparations4 characterizations5 properties1 figure
1 characterization
1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | mica flake thickness range | 6-10nm | — | |||
| Electron Beam Accelerating Voltage | localized irradiation voltage | 3kV | — | |||
| Electron Beam Current | localized irradiation current | 25pA | — | |||
| Electron Beam Dwell Time | local irradiation dwell time | 10s | — | |||
| Electron Fluence | fluency at each irradiated spot | 7.7e17cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 530nm | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.19Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 20.1Å | — | — | — | — |
| Optical Band Gap | band gap | 7.91eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature
Exciton self-trapping in twisted hexagonal boron nitride homostructures
Strain-Enhanced Coherence in Curved hBN Quantum Emitters
Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
Room temperature quantum emitters in van der Waals α-MoO3
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects
Polarization dynamics of solid-state quantum emitters
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations4 properties1 figure
1 preparation
4 preparations4 characterizations5 properties1 figure
1 characterization
1 characterization
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | mica flake thickness range | 6-10nm | — | |||
| Electron Beam Accelerating Voltage | localized irradiation voltage | 3kV | — | |||
| Electron Beam Current | localized irradiation current | 25pA | — | |||
| Electron Beam Dwell Time | local irradiation dwell time | 10s | — | |||
| Electron Fluence | fluency at each irradiated spot | 7.7e17cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 530nm | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.19Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 20.1Å | — | — | — | — |
| Optical Band Gap | band gap | 7.91eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature
Exciton self-trapping in twisted hexagonal boron nitride homostructures
Strain-Enhanced Coherence in Curved hBN Quantum Emitters
Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
Room temperature quantum emitters in van der Waals α-MoO3
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects
Polarization dynamics of solid-state quantum emitters
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