Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Anand Kumar; Chanaprom Cholsuk; Mohammad N. Mishuk; Mouli Hazra; Clotilde Pillot; Tjorben Matthes; Tanveer A. Shaik; Aslı Çakan; Volker Deckert; Sujin Suwanna; Tobias Vogl

doi:10.1021/acsaom.3c00441

Paper

Atlas literature

Research paper

Experimental CharacterizationComputational DFT

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Anand Kumar, Chanaprom Cholsuk, Mohammad N. Mishuk, Mouli Hazra et al.

arXiv preprint·2024·10.1021/acsaom.3c00441·arXiv:2312.02856

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

4 preparations2 characterizations4 properties1 figure

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

1 preparation

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricPDMSSubstrate / Dielectric

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

4 preparations4 characterizations5 properties1 figure

ExperimentalKAl₂(AlSi₃O₁₀)(OH)2Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

As-received 4H silicon carbide crystal.

1 characterization

ExperimentalSiCStudied Material

As-received n-type gallium nitride crystal on sapphire.

1 characterization

ExperimentalGaNStudied MaterialAl₂O₃Substrate / Dielectric

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation | Matter42 Literature

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation

Samples

Exfoliated hBN flake transferred to a grid-patterned Si/SiO₂ substrate with 290 nm thermal oxide.

hBN exfoliated onto PDMS prior to dry transfer onto Si/SiO2.

Exfoliated muscovite mica flake on Si/SiO₂ substrate.

As-received 4H silicon carbide crystal.

As-received n-type gallium nitride crystal on sapphire.

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Why these are connected

Why these are connected