Research paper
Experimental CharacterizationTheoreticalCryogenic nano-imaging of second-order moiré superlattices
Niels C.H. Hesp, Sergi Batlle-Porro, Roshan Krishna Kumar, Hitesh Agarwal et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Superlattice Periodicity | SOSL periodicity | 500nm | — | |||
| Carrier Density Gate Slope | n(VG) slope | 1.2410¹² cm⁻² V^-1 | — | |||
| Carrier Density Gate Intercept | n(VG) intercept | 0.2710¹² cm⁻² | — | |||
| Twist Angle | mesoscopic twist-angle variation | 1.03deg | — | |||
| Band Gap | hole-side gap at ν = ±4 | 28meV | — | |||
| Band Gap | electron-side gap at ν = ±4 | 36meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Superlattice Periodicity | SOSL periodicity | 500nm | — | |||
| Carrier Density Gate Slope | n(VG) slope | 1.2410¹² cm⁻² V^-1 | — | |||
| Carrier Density Gate Intercept | n(VG) intercept | 0.2710¹² cm⁻² | — | |||
| Twist Angle | mesoscopic twist-angle variation | 1.03deg | — | |||
| Band Gap | hole-side gap at ν = ±4 | 28meV | — | |||
| Band Gap | electron-side gap at ν = ±4 | 36meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Superlattice Periodicity | SOSL periodicity | 500nm | — | |||
| Carrier Density Gate Slope | n(VG) slope | 1.2410¹² cm⁻² V^-1 | — | |||
| Carrier Density Gate Intercept | n(VG) intercept | 0.2710¹² cm⁻² | — | |||
| Twist Angle | mesoscopic twist-angle variation | 1.03deg | — | |||
| Band Gap | hole-side gap at ν = ±4 | 28meV | — | |||
| Band Gap | electron-side gap at ν = ±4 | 36meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Superlattice Periodicity | SOSL periodicity | 500nm | — | |||
| Carrier Density Gate Slope | n(VG) slope | 1.2410¹² cm⁻² V^-1 | — | |||
| Carrier Density Gate Intercept | n(VG) intercept | 0.2710¹² cm⁻² | — | |||
| Twist Angle | mesoscopic twist-angle variation | 1.03deg | — | |||
| Band Gap | hole-side gap at ν = ±4 | 28meV | — | |||
| Band Gap | electron-side gap at ν = ±4 | 36meV | — |