Abstract

Electrically induced p−n junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap Eg. Still, the upper limits of responsivity and noise equivalent power (NEP) at very large Eg remained unknown. Here, we study the cryogenic performance of GBL detectors at f = 0.13 THz by inducing gaps up to Eg ≈90 meV, a value close to the limits observed in recent transport experiments. High value of the gap is achieved by using high-κ bottom hafnium dioxide gate dielectric. The voltage responsivity, current responsivity and NEP optimized with respect to doping do not demonstrate saturation with gap induction up to its maximum values. The NEP demonstrates an order-of-magnitude drop from ∼450 fW/Hz₁/2 in the gapless state to ∼30 fW/Hz₁/2 at the largest gap. At largest induced band gaps, plasmonic oscillations of responsivity become visible and important for optimization of sub-THz response.

Abstract

Electrically induced p−n junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap Eg. Still, the upper limits of responsivity and noise equivalent power (NEP) at very large Eg remained unknown. Here, we study the cryogenic performance of GBL detectors at f = 0.13 THz by inducing gaps up to Eg ≈90 meV, a value close to the limits observed in recent transport experiments. High value of the gap is achieved by using high-κ bottom hafnium dioxide gate dielectric. The voltage responsivity, current responsivity and NEP optimized with respect to doping do not demonstrate saturation with gap induction up to its maximum values. The NEP demonstrates an order-of-magnitude drop from ∼450 fW/Hz₁/2 in the gapless state to ∼30 fW/Hz₁/2 at the largest gap. At largest induced band gaps, plasmonic oscillations of responsivity become visible and important for optimization of sub-THz response.

Abstract

Electrically induced p−n junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap Eg. Still, the upper limits of responsivity and noise equivalent power (NEP) at very large Eg remained unknown. Here, we study the cryogenic performance of GBL detectors at f = 0.13 THz by inducing gaps up to Eg ≈90 meV, a value close to the limits observed in recent transport experiments. High value of the gap is achieved by using high-κ bottom hafnium dioxide gate dielectric. The voltage responsivity, current responsivity and NEP optimized with respect to doping do not demonstrate saturation with gap induction up to its maximum values. The NEP demonstrates an order-of-magnitude drop from ∼450 fW/Hz₁/2 in the gapless state to ∼30 fW/Hz₁/2 at the largest gap. At largest induced band gaps, plasmonic oscillations of responsivity become visible and important for optimization of sub-THz response.

Abstract

Electrically induced p−n junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap Eg. Still, the upper limits of responsivity and noise equivalent power (NEP) at very large Eg remained unknown. Here, we study the cryogenic performance of GBL detectors at f = 0.13 THz by inducing gaps up to Eg ≈90 meV, a value close to the limits observed in recent transport experiments. High value of the gap is achieved by using high-κ bottom hafnium dioxide gate dielectric. The voltage responsivity, current responsivity and NEP optimized with respect to doping do not demonstrate saturation with gap induction up to its maximum values. The NEP demonstrates an order-of-magnitude drop from ∼450 fW/Hz₁/2 in the gapless state to ∼30 fW/Hz₁/2 at the largest gap. At largest induced band gaps, plasmonic oscillations of responsivity become visible and important for optimization of sub-THz response.