Research paper
Computational MLIPComputational MDComputational DFTComputed Phonon| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | in-plane lattice constant a | 3.16angstrom | — | |||
| Interlayer Distance | interlayer distance | 3.05angstrom | — | |||
| Sliding Barrier | rigid-sliding barrier | 3meV/atom | — | |||
| Sliding Barrier | rigid sliding barrier | 3.8meV/atom | — | |||
| Machine Learning Energy Mae | energy MAE | 0.11meV/atom | — | |||
| Machine Learning Force Mae | force MAE | 13.7meV/angstrom | — | |||
| Sliding Velocity | relative interlayer sliding velocity | 1m/s | — | |||
| Vacancy Energy Difference | S-vacancy formation-energy difference | 50meV | — | |||
| Vacancy Concentration Threshold | S-vacancy concentration threshold for pinning | 0.1% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | in-plane lattice constant a | 3.16angstrom | — | |||
| Interlayer Distance | interlayer distance | 3.05angstrom | — | |||
| Sliding Barrier | rigid-sliding barrier | 3meV/atom | — | |||
| Sliding Barrier | rigid sliding barrier | 3.8meV/atom | — | |||
| Machine Learning Energy Mae | energy MAE | 0.11meV/atom | — | |||
| Machine Learning Force Mae | force MAE | 13.7meV/angstrom | — | |||
| Sliding Velocity | relative interlayer sliding velocity | 1m/s | — | |||
| Vacancy Energy Difference | S-vacancy formation-energy difference | 50meV | — | |||
| Vacancy Concentration Threshold | S-vacancy concentration threshold for pinning | 0.1% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | in-plane lattice constant a | 3.16angstrom | — | |||
| Interlayer Distance | interlayer distance | 3.05angstrom | — | |||
| Sliding Barrier | rigid-sliding barrier | 3meV/atom | — | |||
| Sliding Barrier | rigid sliding barrier | 3.8meV/atom | — | |||
| Machine Learning Energy Mae | energy MAE | 0.11meV/atom | — | |||
| Machine Learning Force Mae | force MAE | 13.7meV/angstrom | — | |||
| Sliding Velocity | relative interlayer sliding velocity | 1m/s | — | |||
| Vacancy Energy Difference | S-vacancy formation-energy difference | 50meV | — | |||
| Vacancy Concentration Threshold | S-vacancy concentration threshold for pinning | 0.1% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | in-plane lattice constant a | 3.16angstrom | — | |||
| Interlayer Distance | interlayer distance | 3.05angstrom | — | |||
| Sliding Barrier | rigid-sliding barrier | 3meV/atom | — | |||
| Sliding Barrier | rigid sliding barrier | 3.8meV/atom | — | |||
| Machine Learning Energy Mae | energy MAE | 0.11meV/atom | — | |||
| Machine Learning Force Mae | force MAE | 13.7meV/angstrom | — | |||
| Sliding Velocity | relative interlayer sliding velocity | 1m/s | — | |||
| Vacancy Energy Difference | S-vacancy formation-energy difference | 50meV | — | |||
| Vacancy Concentration Threshold | S-vacancy concentration threshold for pinning | 0.1% | — |