Research paper
Computational DFTComputational Multiscale| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic State Energy | CdS VBM-3 | -0.336eV | — | |||
| Electronic State Energy | CdS VBM-2 | -0.235eV | — | |||
| Electronic State Energy | HOMO | -0.075eV | — | |||
| Electronic State Energy | LUMO | 0.056eV | — | |||
| Electronic State Energy | CdS CBM+2 | 2.156eV | — | |||
| Electronic State Energy | CdS CBM+3 | 2.207eV | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 11.5% | — | |||
| Charge Transfer Fraction | excited hole transferred to MoS₂ | 12.1% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 21.5% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 31% | — | |||
| Charge Transfer Enhancement Factor | ligand enhancement of electron transfer rate | 2.2 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic State Energy | CdS VBM-3 | -0.336eV | — | |||
| Electronic State Energy | CdS VBM-2 | -0.235eV | — | |||
| Electronic State Energy | HOMO | -0.075eV | — | |||
| Electronic State Energy | LUMO | 0.056eV | — | |||
| Electronic State Energy | CdS CBM+2 | 2.156eV | — | |||
| Electronic State Energy | CdS CBM+3 | 2.207eV | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 11.5% | — | |||
| Charge Transfer Fraction | excited hole transferred to MoS₂ | 12.1% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 21.5% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 31% | — | |||
| Charge Transfer Enhancement Factor | ligand enhancement of electron transfer rate | 2.2 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic State Energy | CdS VBM-3 | -0.336eV | — | |||
| Electronic State Energy | CdS VBM-2 | -0.235eV | — | |||
| Electronic State Energy | HOMO | -0.075eV | — | |||
| Electronic State Energy | LUMO | 0.056eV | — | |||
| Electronic State Energy | CdS CBM+2 | 2.156eV | — | |||
| Electronic State Energy | CdS CBM+3 | 2.207eV | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 11.5% | — | |||
| Charge Transfer Fraction | excited hole transferred to MoS₂ | 12.1% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 21.5% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 31% | — | |||
| Charge Transfer Enhancement Factor | ligand enhancement of electron transfer rate | 2.2 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic State Energy | CdS VBM-3 | -0.336eV | — | |||
| Electronic State Energy | CdS VBM-2 | -0.235eV | — | |||
| Electronic State Energy | HOMO | -0.075eV | — | |||
| Electronic State Energy | LUMO | 0.056eV | — | |||
| Electronic State Energy | CdS CBM+2 | 2.156eV | — | |||
| Electronic State Energy | CdS CBM+3 | 2.207eV | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 11.5% | — | |||
| Charge Transfer Fraction | excited hole transferred to MoS₂ | 12.1% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 21.5% | — | |||
| Charge Transfer Fraction | excited electron transferred to MoS₂ | 31% | — | |||
| Charge Transfer Enhancement Factor | ligand enhancement of electron transfer rate | 2.2 | — |