Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Period | square lattice period | 250nm | — | — | ||
| Lattice Depth | electrostatic lattice depth | 250ueV | — | — | ||
| Wannier State Splitting | two accessible confined states | 150ueV | — | — | ||
| PL Peak | charged-exciton / neutral-exciton emission separation | 1meV | — | |||
| PL Peak | two emission lines separated by | 100ueV | — | |||
| Interaction Strength | nearest-neighbour CX-CX interaction strength | 140ueV | — | |||
| Critical Temperature | checkerboard solid melting temperature | 1K | — | |||
| Residual Doping | residual hole concentration | 40000000cm⁻² | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Period | square lattice period | 250nm | — | — | ||
| Lattice Depth | electrostatic lattice depth | 250ueV | — | — | ||
| Wannier State Splitting | two accessible confined states | 150ueV | — | — | ||
| PL Peak | charged-exciton / neutral-exciton emission separation | 1meV | — | |||
| PL Peak | two emission lines separated by | 100ueV | — | |||
| Interaction Strength | nearest-neighbour CX-CX interaction strength | 140ueV | — | |||
| Critical Temperature | checkerboard solid melting temperature | 1K | — | |||
| Residual Doping | residual hole concentration | 40000000cm⁻² | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Period | square lattice period | 250nm | — | — | ||
| Lattice Depth | electrostatic lattice depth | 250ueV | — | — | ||
| Wannier State Splitting | two accessible confined states | 150ueV | — | — | ||
| PL Peak | charged-exciton / neutral-exciton emission separation | 1meV | — | |||
| PL Peak | two emission lines separated by | 100ueV | — | |||
| Interaction Strength | nearest-neighbour CX-CX interaction strength | 140ueV | — | |||
| Critical Temperature | checkerboard solid melting temperature | 1K | — | |||
| Residual Doping | residual hole concentration | 40000000cm⁻² | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Period | square lattice period | 250nm | — | — | ||
| Lattice Depth | electrostatic lattice depth | 250ueV | — | — | ||
| Wannier State Splitting | two accessible confined states | 150ueV | — | — | ||
| PL Peak | charged-exciton / neutral-exciton emission separation | 1meV | — | |||
| PL Peak | two emission lines separated by | 100ueV | — | |||
| Interaction Strength | nearest-neighbour CX-CX interaction strength | 140ueV | — | |||
| Critical Temperature | checkerboard solid melting temperature | 1K | — | |||
| Residual Doping | residual hole concentration | 40000000cm⁻² | — |