Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated weakly confining GaAs/Al0.4Ga0.6As quantum dot structure (QD₁) with a 2 nm GaAs wetting layer embedded in Al0.4Ga0.6As, used for 8-band k·p, continuum-elasticity, and configuration-interaction calculations of X0, X±, and XX.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated weakly confining GaAs/Al0.4Ga0.6As quantum dot structure (QD₁) with a 2 nm GaAs wetting layer embedded in Al0.4Ga0.6As, used for 8-band k·p, continuum-elasticity, and configuration-interaction calculations of X0, X±, and XX.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated weakly confining GaAs/Al0.4Ga0.6As quantum dot structure (QD₁) with a 2 nm GaAs wetting layer embedded in Al0.4Ga0.6As, used for 8-band k·p, continuum-elasticity, and configuration-interaction calculations of X0, X±, and XX.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated weakly confining GaAs/Al0.4Ga0.6As quantum dot structure (QD₁) with a 2 nm GaAs wetting layer embedded in Al0.4Ga0.6As, used for 8-band k·p, continuum-elasticity, and configuration-interaction calculations of X0, X±, and XX.