Research paperTheoreticalOther ComputationalHeavy-Hole Spin Relaxation in Quantum Dots: Isotropic versus Anisotropic EffectsDalton Forbes, Sanjay Prabhakar, Ruma De, Himadri S. Chakraborty et al.2024·10.1103/PhysRevB.110.045422·arXiv:2407.09689AbstractThis paper studies phonon-mediated heavy-hole spin relaxation in isotropic and anisotropic quantum dots, focusing on how Rashba and Dresselhaus spin-orbit couplings and the sign of the bulk g-factor affect spin hot spots in III-V semiconductor materials including GaAs, GaSb, InAs, and InSb.Read more
Simulated heavy-hole quantum dot system in GaAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in GaSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaSbStudied MaterialExpand
Simulated heavy-hole quantum dot system in InAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in InSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInSbStudied MaterialExpand
Research paperTheoreticalOther ComputationalHeavy-Hole Spin Relaxation in Quantum Dots: Isotropic versus Anisotropic EffectsDalton Forbes, Sanjay Prabhakar, Ruma De, Himadri S. Chakraborty et al.2024·10.1103/PhysRevB.110.045422·arXiv:2407.09689AbstractThis paper studies phonon-mediated heavy-hole spin relaxation in isotropic and anisotropic quantum dots, focusing on how Rashba and Dresselhaus spin-orbit couplings and the sign of the bulk g-factor affect spin hot spots in III-V semiconductor materials including GaAs, GaSb, InAs, and InSb.Read more
Simulated heavy-hole quantum dot system in GaAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in GaSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaSbStudied MaterialExpand
Simulated heavy-hole quantum dot system in InAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in InSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInSbStudied MaterialExpand
Research paperTheoreticalOther ComputationalHeavy-Hole Spin Relaxation in Quantum Dots: Isotropic versus Anisotropic EffectsDalton Forbes, Sanjay Prabhakar, Ruma De, Himadri S. Chakraborty et al.2024·10.1103/PhysRevB.110.045422·arXiv:2407.09689AbstractThis paper studies phonon-mediated heavy-hole spin relaxation in isotropic and anisotropic quantum dots, focusing on how Rashba and Dresselhaus spin-orbit couplings and the sign of the bulk g-factor affect spin hot spots in III-V semiconductor materials including GaAs, GaSb, InAs, and InSb.Read more
Simulated heavy-hole quantum dot system in GaAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in GaSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaSbStudied MaterialExpand
Simulated heavy-hole quantum dot system in InAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in InSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInSbStudied MaterialExpand
Research paperTheoreticalOther ComputationalHeavy-Hole Spin Relaxation in Quantum Dots: Isotropic versus Anisotropic EffectsDalton Forbes, Sanjay Prabhakar, Ruma De, Himadri S. Chakraborty et al.2024·10.1103/PhysRevB.110.045422·arXiv:2407.09689AbstractThis paper studies phonon-mediated heavy-hole spin relaxation in isotropic and anisotropic quantum dots, focusing on how Rashba and Dresselhaus spin-orbit couplings and the sign of the bulk g-factor affect spin hot spots in III-V semiconductor materials including GaAs, GaSb, InAs, and InSb.Read more
Simulated heavy-hole quantum dot system in GaAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in GaSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedGaSbStudied MaterialExpand
Simulated heavy-hole quantum dot system in InAs, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInAsStudied MaterialExpand
Simulated heavy-hole quantum dot system in InSb, treated in isotropic and anisotropic geometries for spin-relaxation analysis.No measurements recordedInSbStudied MaterialExpand
