Research paperTheoreticalComputational Kinetic ModelFractional Quantum Hall States of the A phase in the Second Landau LevelSudipto Das, Sahana Das, Sudhansu S. Mandal2024·10.1103/PhysRevLett.132.106501·arXiv:2301.00850AbstractA proposal of the existence of an Anomalous phase (A phase) at the experimental range of moderate Landau-level-mixing strength has recently been made for the 5/2 state. The paper reports that the gapped A phase is generic to spin-polarized fractional quantum Hall states with filling fractions ν = n/(nm − 1) and ν = 1 − n/(nm − 1) (n ≥ 1, m ≥ 3), which include most observed second-Landau-level states in GaAs systems. The proposed trial wavefunctions have high overlaps with exact ground states, support non-Abelian quasiparticle excitations with charge e/[2(nm⁻¹)], and predict a thermal Hall conductance of 2.5(π2 kB2 T/3h).Read more
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/2 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 3/8 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 7/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 4/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputational Kinetic ModelFractional Quantum Hall States of the A phase in the Second Landau LevelSudipto Das, Sahana Das, Sudhansu S. Mandal2024·10.1103/PhysRevLett.132.106501·arXiv:2301.00850AbstractA proposal of the existence of an Anomalous phase (A phase) at the experimental range of moderate Landau-level-mixing strength has recently been made for the 5/2 state. The paper reports that the gapped A phase is generic to spin-polarized fractional quantum Hall states with filling fractions ν = n/(nm − 1) and ν = 1 − n/(nm − 1) (n ≥ 1, m ≥ 3), which include most observed second-Landau-level states in GaAs systems. The proposed trial wavefunctions have high overlaps with exact ground states, support non-Abelian quasiparticle excitations with charge e/[2(nm⁻¹)], and predict a thermal Hall conductance of 2.5(π2 kB2 T/3h).Read more
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/2 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 3/8 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 7/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 4/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputational Kinetic ModelFractional Quantum Hall States of the A phase in the Second Landau LevelSudipto Das, Sahana Das, Sudhansu S. Mandal2024·10.1103/PhysRevLett.132.106501·arXiv:2301.00850AbstractA proposal of the existence of an Anomalous phase (A phase) at the experimental range of moderate Landau-level-mixing strength has recently been made for the 5/2 state. The paper reports that the gapped A phase is generic to spin-polarized fractional quantum Hall states with filling fractions ν = n/(nm − 1) and ν = 1 − n/(nm − 1) (n ≥ 1, m ≥ 3), which include most observed second-Landau-level states in GaAs systems. The proposed trial wavefunctions have high overlaps with exact ground states, support non-Abelian quasiparticle excitations with charge e/[2(nm⁻¹)], and predict a thermal Hall conductance of 2.5(π2 kB2 T/3h).Read more
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/2 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 3/8 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 7/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 4/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputational Kinetic ModelFractional Quantum Hall States of the A phase in the Second Landau LevelSudipto Das, Sahana Das, Sudhansu S. Mandal2024·10.1103/PhysRevLett.132.106501·arXiv:2301.00850AbstractA proposal of the existence of an Anomalous phase (A phase) at the experimental range of moderate Landau-level-mixing strength has recently been made for the 5/2 state. The paper reports that the gapped A phase is generic to spin-polarized fractional quantum Hall states with filling fractions ν = n/(nm − 1) and ν = 1 − n/(nm − 1) (n ≥ 1, m ≥ 3), which include most observed second-Landau-level states in GaAs systems. The proposed trial wavefunctions have high overlaps with exact ground states, support non-Abelian quasiparticle excitations with charge e/[2(nm⁻¹)], and predict a thermal Hall conductance of 2.5(π2 kB2 T/3h).Read more
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/2 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 3/8 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 1/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 2/3 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 7/9 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
Second Landau level fractional quantum Hall state in the A phase at filling fraction ν = 4/5 in a GaAs system.2 propertiesSimulatedGaAsStudied MaterialExpand
