Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Self-assembled GaAs quantum dot embedded in an Al0.15Ga0.85As matrix and capped by Al0.33Ga0.67As in a p-i-n diode structure; droplet-etched nanohole QD platform studied under in-plane magnetic field.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Self-assembled GaAs quantum dot embedded in an Al0.15Ga0.85As matrix and capped by Al0.33Ga0.67As in a p-i-n diode structure; droplet-etched nanohole QD platform studied under in-plane magnetic field.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Self-assembled GaAs quantum dot embedded in an Al0.15Ga0.85As matrix and capped by Al0.33Ga0.67As in a p-i-n diode structure; droplet-etched nanohole QD platform studied under in-plane magnetic field.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Self-assembled GaAs quantum dot embedded in an Al0.15Ga0.85As matrix and capped by Al0.33Ga0.67As in a p-i-n diode structure; droplet-etched nanohole QD platform studied under in-plane magnetic field.