Research paperExperimental CharacterizationCharacterization of Semiconducting Materials Using the Van der Pauw MethodJ. P. RiliarXiv·2023·10.48550/arXiv.2312.05744·arXiv:2312.05744AbstractIn this experiment, the material properties (resistivity, Hall coefficient, and mobility) of a doped GaAs sheet are characterized using Hall effect and the Van der Pauw method with varying temperature and magnetic field. The sample is identified as n-type from the sign of the Hall coefficient, and the magnetic-field dependence and temperature dependence of the transport properties are analyzed.Read more
A doped GaAs sheet used for Van der Pauw and Hall-effect characterization; the corners are coated with Ti/Pt/Au contacts.1 characterization5 properties2 figuresExperimentalGaAsStudied MaterialTiCapping Or ContactPtCapping Or ContactAuCapping Or ContactExpand
Research paperExperimental CharacterizationCharacterization of Semiconducting Materials Using the Van der Pauw MethodJ. P. RiliarXiv·2023·10.48550/arXiv.2312.05744·arXiv:2312.05744AbstractIn this experiment, the material properties (resistivity, Hall coefficient, and mobility) of a doped GaAs sheet are characterized using Hall effect and the Van der Pauw method with varying temperature and magnetic field. The sample is identified as n-type from the sign of the Hall coefficient, and the magnetic-field dependence and temperature dependence of the transport properties are analyzed.Read more
A doped GaAs sheet used for Van der Pauw and Hall-effect characterization; the corners are coated with Ti/Pt/Au contacts.1 characterization5 properties2 figuresExperimentalGaAsStudied MaterialTiCapping Or ContactPtCapping Or ContactAuCapping Or ContactExpand
Research paperExperimental CharacterizationCharacterization of Semiconducting Materials Using the Van der Pauw MethodJ. P. RiliarXiv·2023·10.48550/arXiv.2312.05744·arXiv:2312.05744AbstractIn this experiment, the material properties (resistivity, Hall coefficient, and mobility) of a doped GaAs sheet are characterized using Hall effect and the Van der Pauw method with varying temperature and magnetic field. The sample is identified as n-type from the sign of the Hall coefficient, and the magnetic-field dependence and temperature dependence of the transport properties are analyzed.Read more
A doped GaAs sheet used for Van der Pauw and Hall-effect characterization; the corners are coated with Ti/Pt/Au contacts.1 characterization5 properties2 figuresExperimentalGaAsStudied MaterialTiCapping Or ContactPtCapping Or ContactAuCapping Or ContactExpand
Research paperExperimental CharacterizationCharacterization of Semiconducting Materials Using the Van der Pauw MethodJ. P. RiliarXiv·2023·10.48550/arXiv.2312.05744·arXiv:2312.05744AbstractIn this experiment, the material properties (resistivity, Hall coefficient, and mobility) of a doped GaAs sheet are characterized using Hall effect and the Van der Pauw method with varying temperature and magnetic field. The sample is identified as n-type from the sign of the Hall coefficient, and the magnetic-field dependence and temperature dependence of the transport properties are analyzed.Read more
A doped GaAs sheet used for Van der Pauw and Hall-effect characterization; the corners are coated with Ti/Pt/Au contacts.1 characterization5 properties2 figuresExperimentalGaAsStudied MaterialTiCapping Or ContactPtCapping Or ContactAuCapping Or ContactExpand
