Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

K. L. Hudson; A. Srinivasan; D. S. Miserev; Q. Wang; O. Klochan; O. P. Sushkov; I. Farrer; D. A. Ritchie; A. R. Hamilton

doi:10.48550/arxiv.2211.00253

Paper

Atlas literature

Research paper

Experimental CharacterizationTheoretical

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

K. L. Hudson, A. Srinivasan, D. S. Miserev, Q. Wang et al.

Physical Review Letters·2022·10.48550/arxiv.2211.00253·arXiv:2211.00253

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

1 characterization8 properties2 figures

ExperimentalGaAsStudied MaterialAlGaAsSubstrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts | Matter42 Literature